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Synthesis and Characterization of Mechanoluminescent NaAlSiO4:Eu,Nd Phosphor for Impact Sensor
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1.
International Research Journal
of Engineering and Technology (IRJET) e-ISSN: 2395-0056 Volume: 04 Issue: 07 | July -2017 www.irjet.net p-ISSN: 2395-0072 © 2017, IRJET | Impact Factor value: 5.181 | ISO 9001:2008 Certified Journal | Page 2830 Synthesis and Characterization of Mechanoluminescent NaAlSiO4:Eu, Nd phosphor for impact sensor T. R. Sanodiya1, Piyush Jha2* 1Principal, Yashoda Bai Patel College, Kurai, Seoni, Madhya Pradesh, India 2Assistant Professor, Department of Applied Physics, Raipur Institute of Technology, Raipur, Chhattisgarh, India ---------------------------------------------------------------------***--------------------------------------------------------------------- Abstract - Mechanoluminescent materials give a promising tool for detecting stress distribution in solids. The NaAlSiO4:Eu,Nd phosphor was prepared by conventional solid state reaction method. XRD analysis shows that hexagonal nepheline structure with space group P63. The ML intensity of NaAlSiO4:Eu,Ndphosphor initially increases with time, attains a peak value and decreases with time. The time corresponding to ML intensity does not change significantly with increasing impact velocity. The peak ML intensity increaseslinearly with square of impact velocity. The PL emissionpeaklies at 550 nm. This measurements made suitability of NaAlSiO4:Eu,Ny phosphor for developing stress and damage sensors. Key Words: Mechanoluminescence, Triboluminescence, NaAlSiO4:Eu,Nd phosphor, Sensors, Photoluminescence 1. INTRODUCTION Light emissioncausedbymechanicaldeformationsuch as compression, grinding, cutting, etc., in solid materials is known as mechanoluminescence (ML) (sometimes called triboluminescence when friction occurs) [1,2]. ML has a longhistory[3]andhasrecently been applied to real-time sensors of mechanical stress [4] and structural damage [5] and a resource of X-ray [6]. Several papers have described theoretically and experimentally good aspects of ML [7-13]. Elastic and plastic deformation gives elastico- mechanoluminescence (EML) and plastico- mechanoluminescence (PML). Luminescence due to fracture is called fracto-mechanoluminescence (FML) [1,2]. For the development of damage sensors and pressure sensors, it is very essential to study FML. Many ML materials have been developed such as ZnS:Mn, SrAl2O4:Eu, SrAl2O4:Eu, Dy, SrAl2O4:Ce, SrAl2O4:Ce,Ho SrMgAl6O11:Eu, SrBaMgSi2O7:Eu, SrCaMgSi2O7:Eu, Sr2MgSi2O7:Eu, Ca2MgSi2O7:Eu,Dy, CaYAl3O7:Eu, (Ba,Ca)TiO3:Pr3+, MgGa2O4:Mn, ZnGa2O4:Mn, BaAl2Si2O8:rare earth element, Ca2Al2SiO7:Ce, ZrO2:Ti and ZnMnTe, ZnS:Mn, Te [3]. So far, SrAl2O4:Eu, Dy phosphors is found very intense ML material and fulfill all need of sensors but its chemical stability is poor. It is need of development to produce stable ML material for sensors. NaAlSiO4:Eu,Ny phosphor is one of them. Thus, developing of excellent ML materials in the present era for ML sensor application is still an important task. The present paper reports in detail for the first time, the characteristics of ML in NaAlSiO4:Eu,Nd phosphor induced using a impulsive excitation technique. 2. EXPERIMENTAL The Na0.96AlSiO4:Eu0.02,Nd0.02 phosphor is prepared by conventional solid state reaction method (SSR). The used precursor materials are Na2CO3 (99.9%), Al2O3 (99.9%), SiO2 (99.9%), MgO (99.9%), Eu2O3 (99.9%) and Nd2O3 (99.9%). These material were mixed with the addition of ethanol and ground for 2 h. Stoichiometricmixturesofrawmaterialsweresintered in an alumina crucible at 1200 ºC in carbon reducing atmosphere for 10 h. After cooling it to room temperature naturally, the as-obtained sample was ground into powder with the help of agate mortar. The prepared Na0.96AlSiO4:Eu0.02,Nd0.02 phosphor was characterized by powder XRD method. PANalytical 3 kW X'pert Powder XRD - Multifunctional instrument is used for XRD pattern and the data was collected over the 2θ range 10–100° at room temperature. The photoluminescence (PL) spectrumwasrecordedusing Carry eclipse fluorescence spectrophotometer, in which the wavelength of the light used for excitation was 365 nm. In the present investigation the ML in Na0.96AlSiO4:Eu0.02,Nd0.02 phosphor was excited using impulsive technique reported previously [14]. 3. RESULTS For crystal structure determination, powder XRD analysis has been carried out. The typical XRD pattern
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International Research Journal
of Engineering and Technology (IRJET) e-ISSN: 2395-0056 Volume: 04 Issue: 07 | July -2017 www.irjet.net p-ISSN: 2395-0072 © 2017, IRJET | Impact Factor value: 5.181 | ISO 9001:2008 Certified Journal | Page 2831 of Na0.96AlSiO4:Eu0.02,Nd0.02 phosphorisshowninFig.1. The position and intensity of diffraction peaks of Na0.96AlSiO4:Eu0.02,Nd0.02 phosphor are well matched withJointCommitteePowderDiffractionStandarddata (JCPDS) file (PDF #35-0424),). XRD analysis revealed that prepared sample are chemically and structurally Na0.96AlSiO4:Eu0.02,Nd0.02 phosphor. The crystal structure of the Na0.96AlSiO4:Eu0.02,Nd0.02 phosphorwas hexagonal nepheline structure with space group P63. Fig.1 XRD pattern of Na0.96AlSiO4:Eu0.02,Nd0.02 phosphor. Fig.2 shows the time dependence of the MLintensityof Na0.96AlSiO4:Eu0.02,Nd0.02 phosphor at 242 cm/sec impact velocity. It depicts from Fig.2 that when the pistonmakes an impact ontheNa0.96AlSiO4:Eu0.02,Nd0.02 phosphor, then initiallytheMLintensityincreaseswith time and attains a peak value at a particular time, and later on it decreases with time. The local piezoelectricity of the phosphor which produces near the dopant center is responsible for ML. Fig.2 Time dependence of ML intensity of Na0.96AlSiO4:Eu0.02,Nd0.02 phosphor (at 242 cm/sec) Fig.3 shows the semilog plot of I versus (t-tm) for Na0.96AlSiO4:Eu0.02,Nd0.02 phosphor. It is found from Fig.3 that, initially the ML intensity decreases at a fast rate, and later it decreases at slow rate. The value of the slope β for fast decay and slope χ for slow decay in the semilog plot of I versus (t-tm) are shown in Table 1 for 242 cm/sec impact velocity. It is found that the fast decay time τf (= 1/β) and slow decay time τs (= 1/χ) do not change significantly with the impact velocity vo. Fig.3 Semi-log plot of the ML intensity versus (t-tm) for Na0.96AlSiO4:Eu0.02,Nd0.02 phosphor (at 242 cm/sec). Table 1 Values of tm, ξ, χ, τr, and τs for Na0.96AlSiO4:Eu0.02,Nd0.02 phosphor Phosphor Impact velocity v0(cm/s) tm (ms) β (ms-1) χ (ms-1) τf=1/ξ (ms) τs=1/χ (ms) Na0.96AlSiO4: Eu0.02,Nd0.02 242 0.41 1.672 0.925 0.597 1.08 Fig.4 depicts the dependenceoftm (timecorresponding to ML intensity) on impact velocity for Na0.96AlSiO4:Eu0.02,Nd0.02 phosphor. It is seen that the value of tm does not change significantly with increasing value of the impact velocity that mean the sample phosphors could not suppress to a certain extend. Fig.4 Dependence of tm on impact velocity for Na0.96AlSiO4:Eu0.02,Nd0.02 phosphor. Fig.5 shows that the peak ML intensity increases linearly with square of increasing impact velocity.This result shows that some part of the mechanical energy
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International Research Journal
of Engineering and Technology (IRJET) e-ISSN: 2395-0056 Volume: 04 Issue: 07 | July -2017 www.irjet.net p-ISSN: 2395-0072 © 2017, IRJET | Impact Factor value: 5.181 | ISO 9001:2008 Certified Journal | Page 2832 or piezoelectric energy is converted into the light energy. The Young’s modulus of melilite compound NaAlSiO4 reaches 103 GPa [15]. At low impact velocity (in our experiment up to 342 cm/s) using 800 g piston, the impact energy would induce an extra amount of detrapping of trapped carriers in addition to detrapping by thermal energy. At small value of initial velocity the MLintensityincreaseslinearlywithsquare of impact velocity [8]. It is revealed by the experiment that the strong ML of Na0.96AlSiO4:Eu0.02,Nd0.02 phosphor may be useful in designing the impactstress sensors and impact velocity sensors. Fig.5 Dependence of the peak ML intensity on square of impact velocity of Na0.96AlSiO4:Eu0.02,Nd0.02 phosphor. Fig.6 shows the PL emission spectra (λex =400nm) of Na0.96AlSiO4:Eu0.02,Nd0.02 phosphor.Thebroademission peak can be attributed due to 4f-5d transition of Eu2+ ions, which exhibits a greenish yellow emission centered at 550 nm. Fig.6 Photoluminescence spectra of Na0.96AlSiO4:Eu0.02,Nd0.02 phosphor. 4. CONCLUSIONS In the present study the NaAlSiO4:Eu,Dy phosphorwas prepared by conventional solid state reaction method. The crystal structure of NaAlSiO4:Eu,Dy phosphor is determined by XRD shows hexagonal nepheline structure with space group P63. The ML intensity initially increases with time, attains a peak value and then, decreases with time. The time corresponding to the ML intensity does not change significantly with increasing impact velocity. The peak ML intensity increases linearly with square of impact velocity. The PL spectra lie at 550 nm. These measurements made suitability of NaAlSiO4:Eu,Dy phosphor for developing stress and damage sensors. References [1] B. P. Chandra, in: D.R. Vij (Ed.), Luminescence of Solids, Plenum Press, New York, (1998). [2] B.P. Chandra, in: Stashans A, Gonzalez S, Pinto HP (Eds.), Electronic and Catalytic Properties of Advanced Materials, Transworld Research Network, Trivandrum, Kerala, India, (2011). [3] P. Jha and B.P. Chandra, Survey of the literature on mechanoluminescence from 1605 to 2013, Lumin. Vol. 29, pp. 977- 993, 2014. [4] C. N. Xu, T. Watanabe, M. Akiyama and X. G. Zheng, Artificialskintosensemechanicalstressbyvisible light emission. Appl. Phys. Lett. Vol. 75, pp. 1236- 1238, 1999. [5] I. Sage and G. Bourhill, Triboluminescent materials for structural damage monitoring, J. Mater. Chem. Vol. 11, pp. 231−245, 2001. [6] C.G. Camara, J.V. Escobar, J.R. Hird and S.J. Putterman, CorrelationbetweennanosecondX-ray flashes and stick–slip friction in peeling tape, Nature Vol. 455, pp. 1089−1092, 2008. [7] B. P. Chandra, V. K. Chandra and Piyush Jha, Modellingoffracto-mechanoluminescencedamage sensor for structures, Sens. Actuators A Vol. 230, pp. 83-93, 2015,. [8] P. Jha and B. P. Chandra, Impulsive excitation of mechanoluminescenceinSrAl2O4:Eu,Dyphosphors prepared by solid state reaction technique in reduction atmosphere, J. Lumin. Vol. 143, pp. 280- 287, 2013. [9] Piyush Jha, Effect of UV irradiation on different types of luminescenceofSrAl2O4:Eu,Dyphosphors, Lumin. Vol. 31, pp.1302-1305, 2016. [10] V. K. Chandra, B.P. Chandra and P. Jha, Strong luminescence induced by elastic deformation of
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International Research Journal
of Engineering and Technology (IRJET) e-ISSN: 2395-0056 Volume: 04 Issue: 07 | July -2017 www.irjet.net p-ISSN: 2395-0072 © 2017, IRJET | Impact Factor value: 5.181 | ISO 9001:2008 Certified Journal | Page 2833 piezoelectric crystals, Appl. Phys. Lett. Vol. 102, pp. 241105-1-8, 2013. [11] V. K. Chandra, B.P. Chandra and P. Jha, Self- recovery of mechanoluminescenceinZnS:Cuand ZnS:Mn phosphors by trapping of driftingcharge carriers, Appl. Phys. Lett. Vol. 103, pp.161113-1- 5, 2013. [12] B. P. Chandra, V.K. ChandraandP.Jha,Microscopic theory of elastico-mechanoluminescent smart materials, Appl. Phys. Lett. Vol. 104, pp. 031102- 031106, 2014. [13]B. P. Chandra, V.K. Chandra and P. Jha, Piezoelectrically-induced trap-depth reduction modelofelastico-mechanoluminescentmaterials, Physica B Vol. 461, pp.38-48, 2015. [14] B. P. Chandra, S. Tiwari, M. Ramrakhiani and M. H. Ansari, Mechanoluminescence in centrosymmetric crystals, Cryst. Res. Technol. Vol. 26, pp. 767-81, 1991. [15] M. Mookherjee, Mid‐mantle anisotropy: Elasticity of aluminous phases in subducted MORB, Geophysical Research Letters Vol. 38, pp. L14302-1-5, 2011. BIOGRAPHIES Piyush Jha obtained his M.Phil. in Physics from Rani Dur-gavati University, Jabalpur,MP,Indiainthe year 2008 and also Ph.D. in Physics, from Rani Durgavati University, Jabalpur, MP, India in the year 2013. He is an Assistant Professor of Applied Physics, at Raipur Institute of Tech-nology, Raipur, CG, India. His current field of interest is optoelectronic materials and sensors. T. R. Sanodiya obtained his Ph.D. in Physics, from Rani Durgavati University, Jabalpur, MP, India in the year 2011. He is a Principal of Yashoda Bai Patel College, Kurai, Seoni, Madhya Pradesh, India. His current field of interest is optoelectronic materials.
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