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VLSI Technology Evolution
Mr. A. B. Shinde
Assistant Professor,
Electronics Engineering, PVPIT, Budhgaon
Before we start… Answer this
 What is VLSI ?
 If your answers is other than…
V L S I = Very Large Scale Integration
then you are most welcome…
VLSI Technology Evolution2
Vacuum Tubes
Gas-filled Tube
VLSI Technology Evolution3
Early Computers
VLSI Technology Evolution4
Courtesy:
Intel Corporation
Vacuum Tubes…
 A gas-filled tube is essentially a vacuum tube having a small
amount of some inert gas at low pressure.
 Gas-filled tubes have two types:
 Cold-cathode type and Hot-cathode type.
Cold-cathode Hot-cathode
VLSI Technology Evolution5
Cold-Cathode Gas Diode
VLSI Technology Evolution6
Hot-Cathode Gas Diode
VLSI Technology Evolution7
Thyratron (Triode)
VLSI Technology Evolution8
Atomic Structure
Number of Electrons in orbit = 2n2Neils Bohr
VLSI Technology Evolution9
Energy Bands
 larger the orbit of an electron, the greater is its energy and higher is the
energy level.
VLSI Technology Evolution10
Energy Bands in Solids
 Valence band: The range of energies (i.e.
band) possessed by valence electrons is
known as valence band.
 Conduction band: The range of energies
(i.e. band) possessed by conduction band
electrons is known as conduction band.
 Forbidden energy gap: The separation
between conduction band and valence band
on the energy level diagram is known as
forbidden energy gap.
VLSI Technology Evolution11
Classification of Solids & Energy Bands
Insulators Conductors Semicondutors
1 eV is the amount of energy acquired by an electron when it is
accelerated through a potential difference of 1 V.
energy gap is ≈ 15 eV Bands are overlapped energy gap is ≈ 1 eV
VLSI Technology Evolution12
Semiconductors
 Semiconductor has :
 almost full valence band
 almost empty conduction band
 small energy gap (≈ 1 eV) between
valence and conduction bands.
Silicon atom
Germanium atom
VLSI Technology Evolution13
Commonly Used Semiconductors
Silicon Germanium
VLSI Technology Evolution14
Energy Band Description
VLSI Technology Evolution15
Effect of Temperature on Semiconductors
 At absolute zero: All the electrons are tightly held by the
semiconductor atoms. The valence electrons are engaged in co-valent
bonding.
 At this temperature, the co-valent bonds are very strong and there are
no free electrons.
 Hence, the semiconductor crystal behaves as a perfect insulator
 Above absolute zero: Some of the covalent bonds in the
semiconductor break due to the thermal energy supplied.
 The breaking of bonds sets those electrons free therefore few free
electrons exist in the semiconductor.
 The resistance of a semiconductor decreases with the rise in
temperature
 It has negative temperature coefficient of resistance.
VLSI Technology Evolution16
Types of semiconductor
 Intrinsic Semiconductor:
 A semiconductor in an extremely pure form is known as an intrinsic
semiconductor
 It has little current conduction capability at room temperature
 Extrinsic Semiconductor:
 The pure semiconductor must be altered so as to significantly increase
its conducting properties.
 This is achieved by adding a small amount of suitable impurity to a
semiconductor.
 The semiconductor with impurity is called as extrinsic semiconductor.
 Further two types:
n-type & p-type
(If Impurity is from 5th column) (If Impurity is from 3rd column)
VLSI Technology Evolution17
n-type Semiconductor
 When a small amount of pentavalent impurity is added to a pure
semiconductor, it is known as n-type semiconductor
Pentavalent impurities:
arsenic (At. No. 33) &
antimony (At. No. 51).
Such impurities which produce
n-type semiconductor are
known as donor impurities
because they donate or provide
free electrons
VLSI Technology Evolution18
p-type Semiconductor
 When a small amount of trivalent impurity is added to a pure
semiconductor, it is called p-type semiconductor.
Trivalent impurities:
gallium (At. No. 31) &
indium (At. No. 49).
Such impurities which produce p-
type semiconductor are known as
acceptor impurities because the
holes created can accept the
electrons.
VLSI Technology Evolution19
pn junction diode
VLSI Technology Evolution20
Transistor
 A transistor consists of two pn junctions formed by sandwiching either
p-type or n-type semiconductor between a pair of opposite types.
npn transistor
symbol 2 diode analogy
VLSI Technology Evolution21
Transistor
First transistor
1947: Bardeen, Brattain and Schokley at Bell laboratories built the first
working point contact transistor (Nobel Prize in Physics in 1956)
The field of electronics shifted from vacuum tubes to solid-state
devices
Courtesy:
Texas Instruments
VLSI Technology Evolution22
Transistors
 To manufacture larger circuits the number of transistors required
will be more…ultimately large board space was required
 Human mind never sits idle
 They was continuously thinking
“can we bring few transistors together…?
 And the answer found in 1958… Yes
IC was invented …!!!
VLSI Technology Evolution23
Integrated Circuit
 An integrated circuit (IC) is one in which circuit components such as
transistors, diodes, resistors, capacitors etc. are mounted on small
piece of semiconductor i.e. first IC was developed.
 On IC we can easily mount large number of components together.
 IC Inventers: Jack Kilby & Robert Noyce
VLSI Technology Evolution24
Integrated Circuit
First integrated circuit
Courtesy:
Texas Instruments
As 1958: Jack Kilby built the first integrated circuit flip flop at Texas
Instruments (Nobel Prize in Physics in 2000)
VLSI Technology Evolution25
Integrated Circuit
 Cross Section: Internal View
VLSI Technology Evolution26
Integrated Circuit Growth
VLSI Technology Evolution27
Integrated Circuit
Advantages :
1. Increased reliability due to lesser number of connections.
2. Extremely small size
3. Lesser weight and space requirement
4. Low power requirements.
5. Greater ability to operate at extreme values of temperature.
6. Low cost
7. The circuit lay out is greatly simplified
Disadvantages :
1. If any component in an IC goes out of order, the whole IC has to be replaced.
2. In an IC, it is neither convenient nor economical to fabricate capacitances
exceeding 30 pF.
3. It is not possible to fabricate inductors and transformers
4. It is not possible to produce high power ICs (greater than 10 W).
VLSI Technology Evolution28
Integrated Circuit
 But… remember “Human mind never sits idle …”
 Continuous research goes on in the direction…
Can we increase the number of transistors…?
Answer is … Yes…!!!
VLSI Technology Evolution29
Integration Technology…
Year No. of Transistors
SSI 1964 1 to 20
MSI 1968 20 to 100
LSI 1971 100 to 1,000
VLSI 1980 1,000 to 10,000
ULSI 1984 10,000 and more
VLSI Technology Evolution30
VLSI Technology
 Design Stages: Abstraction Levels
VLSI Technology Evolution31
VLSI Technology
 Programming Languages
 VHDL
 Verilog
 Implementation Technology
 FPGA
 CPLD
VLSI Technology Evolution32
VHDL
 V = VHSIC
 H = Hardware
 D = Description
 L = Language
 VHSIC = Very High Speed Integrated Circuit
 We can describe any hardware (digital logic) using this language
c<= a and b;
VLSI Technology Evolution33
Implementation Technology
 FPGA = Field Programmable Gate Array
VLSI Technology Evolution34
Implementation Technology
 CPLD = Complex Programmable Logic Devices
VLSI Technology Evolution35
VLSI
Design
Flow
VLSI Technology Evolution36
VLSI Technology Evolution37
This presentation is published only for educational purpose
shindesir.pvp@gmail.com

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VLSI Technology Evolution

  • 1. VLSI Technology Evolution Mr. A. B. Shinde Assistant Professor, Electronics Engineering, PVPIT, Budhgaon
  • 2. Before we start… Answer this  What is VLSI ?  If your answers is other than… V L S I = Very Large Scale Integration then you are most welcome… VLSI Technology Evolution2
  • 3. Vacuum Tubes Gas-filled Tube VLSI Technology Evolution3
  • 4. Early Computers VLSI Technology Evolution4 Courtesy: Intel Corporation
  • 5. Vacuum Tubes…  A gas-filled tube is essentially a vacuum tube having a small amount of some inert gas at low pressure.  Gas-filled tubes have two types:  Cold-cathode type and Hot-cathode type. Cold-cathode Hot-cathode VLSI Technology Evolution5
  • 6. Cold-Cathode Gas Diode VLSI Technology Evolution6
  • 7. Hot-Cathode Gas Diode VLSI Technology Evolution7
  • 9. Atomic Structure Number of Electrons in orbit = 2n2Neils Bohr VLSI Technology Evolution9
  • 10. Energy Bands  larger the orbit of an electron, the greater is its energy and higher is the energy level. VLSI Technology Evolution10
  • 11. Energy Bands in Solids  Valence band: The range of energies (i.e. band) possessed by valence electrons is known as valence band.  Conduction band: The range of energies (i.e. band) possessed by conduction band electrons is known as conduction band.  Forbidden energy gap: The separation between conduction band and valence band on the energy level diagram is known as forbidden energy gap. VLSI Technology Evolution11
  • 12. Classification of Solids & Energy Bands Insulators Conductors Semicondutors 1 eV is the amount of energy acquired by an electron when it is accelerated through a potential difference of 1 V. energy gap is ≈ 15 eV Bands are overlapped energy gap is ≈ 1 eV VLSI Technology Evolution12
  • 13. Semiconductors  Semiconductor has :  almost full valence band  almost empty conduction band  small energy gap (≈ 1 eV) between valence and conduction bands. Silicon atom Germanium atom VLSI Technology Evolution13
  • 14. Commonly Used Semiconductors Silicon Germanium VLSI Technology Evolution14
  • 15. Energy Band Description VLSI Technology Evolution15
  • 16. Effect of Temperature on Semiconductors  At absolute zero: All the electrons are tightly held by the semiconductor atoms. The valence electrons are engaged in co-valent bonding.  At this temperature, the co-valent bonds are very strong and there are no free electrons.  Hence, the semiconductor crystal behaves as a perfect insulator  Above absolute zero: Some of the covalent bonds in the semiconductor break due to the thermal energy supplied.  The breaking of bonds sets those electrons free therefore few free electrons exist in the semiconductor.  The resistance of a semiconductor decreases with the rise in temperature  It has negative temperature coefficient of resistance. VLSI Technology Evolution16
  • 17. Types of semiconductor  Intrinsic Semiconductor:  A semiconductor in an extremely pure form is known as an intrinsic semiconductor  It has little current conduction capability at room temperature  Extrinsic Semiconductor:  The pure semiconductor must be altered so as to significantly increase its conducting properties.  This is achieved by adding a small amount of suitable impurity to a semiconductor.  The semiconductor with impurity is called as extrinsic semiconductor.  Further two types: n-type & p-type (If Impurity is from 5th column) (If Impurity is from 3rd column) VLSI Technology Evolution17
  • 18. n-type Semiconductor  When a small amount of pentavalent impurity is added to a pure semiconductor, it is known as n-type semiconductor Pentavalent impurities: arsenic (At. No. 33) & antimony (At. No. 51). Such impurities which produce n-type semiconductor are known as donor impurities because they donate or provide free electrons VLSI Technology Evolution18
  • 19. p-type Semiconductor  When a small amount of trivalent impurity is added to a pure semiconductor, it is called p-type semiconductor. Trivalent impurities: gallium (At. No. 31) & indium (At. No. 49). Such impurities which produce p- type semiconductor are known as acceptor impurities because the holes created can accept the electrons. VLSI Technology Evolution19
  • 20. pn junction diode VLSI Technology Evolution20
  • 21. Transistor  A transistor consists of two pn junctions formed by sandwiching either p-type or n-type semiconductor between a pair of opposite types. npn transistor symbol 2 diode analogy VLSI Technology Evolution21
  • 22. Transistor First transistor 1947: Bardeen, Brattain and Schokley at Bell laboratories built the first working point contact transistor (Nobel Prize in Physics in 1956) The field of electronics shifted from vacuum tubes to solid-state devices Courtesy: Texas Instruments VLSI Technology Evolution22
  • 23. Transistors  To manufacture larger circuits the number of transistors required will be more…ultimately large board space was required  Human mind never sits idle  They was continuously thinking “can we bring few transistors together…?  And the answer found in 1958… Yes IC was invented …!!! VLSI Technology Evolution23
  • 24. Integrated Circuit  An integrated circuit (IC) is one in which circuit components such as transistors, diodes, resistors, capacitors etc. are mounted on small piece of semiconductor i.e. first IC was developed.  On IC we can easily mount large number of components together.  IC Inventers: Jack Kilby & Robert Noyce VLSI Technology Evolution24
  • 25. Integrated Circuit First integrated circuit Courtesy: Texas Instruments As 1958: Jack Kilby built the first integrated circuit flip flop at Texas Instruments (Nobel Prize in Physics in 2000) VLSI Technology Evolution25
  • 26. Integrated Circuit  Cross Section: Internal View VLSI Technology Evolution26
  • 27. Integrated Circuit Growth VLSI Technology Evolution27
  • 28. Integrated Circuit Advantages : 1. Increased reliability due to lesser number of connections. 2. Extremely small size 3. Lesser weight and space requirement 4. Low power requirements. 5. Greater ability to operate at extreme values of temperature. 6. Low cost 7. The circuit lay out is greatly simplified Disadvantages : 1. If any component in an IC goes out of order, the whole IC has to be replaced. 2. In an IC, it is neither convenient nor economical to fabricate capacitances exceeding 30 pF. 3. It is not possible to fabricate inductors and transformers 4. It is not possible to produce high power ICs (greater than 10 W). VLSI Technology Evolution28
  • 29. Integrated Circuit  But… remember “Human mind never sits idle …”  Continuous research goes on in the direction… Can we increase the number of transistors…? Answer is … Yes…!!! VLSI Technology Evolution29
  • 30. Integration Technology… Year No. of Transistors SSI 1964 1 to 20 MSI 1968 20 to 100 LSI 1971 100 to 1,000 VLSI 1980 1,000 to 10,000 ULSI 1984 10,000 and more VLSI Technology Evolution30
  • 31. VLSI Technology  Design Stages: Abstraction Levels VLSI Technology Evolution31
  • 32. VLSI Technology  Programming Languages  VHDL  Verilog  Implementation Technology  FPGA  CPLD VLSI Technology Evolution32
  • 33. VHDL  V = VHSIC  H = Hardware  D = Description  L = Language  VHSIC = Very High Speed Integrated Circuit  We can describe any hardware (digital logic) using this language c<= a and b; VLSI Technology Evolution33
  • 34. Implementation Technology  FPGA = Field Programmable Gate Array VLSI Technology Evolution34
  • 35. Implementation Technology  CPLD = Complex Programmable Logic Devices VLSI Technology Evolution35
  • 37. VLSI Technology Evolution37 This presentation is published only for educational purpose shindesir.pvp@gmail.com