Voltage Comparator Modeling Report
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SPICE MODEL of TC75S59F in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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Voltage Comparator Modeling Report
- 1. Device Modeling Report COMPONENTS : VOLTAGE COMPARATOR (CMOS) PART NUMBER : TC75S59F MANUFACTURER : TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 2. MODEL PARAMETER Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 3. Output Low Voltage Simulation result Simulation Evaluation Circuit VDD VOUT Vol - + U1 TC75S59F V2 VIN- VSS VIN+ I1 5 V1 5m 1 0 Comparison Table Isink=5mA Measurement Simulation %Error Vol (V) 0.1 0.097472 -2.528 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 4. Output Sink Current Simulation result Simulation Evaluation Circuit VDD VOUT - + U2 TC75S59F VIN- VSS VIN+ 5 V3 Vsink 0.5 V4 1 0 Comparison Table VOL = 0.5 V Measurement Simulation %Error Isink (mA) 25 24.375 -2.50 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 5. Propagation Delay Time and Response Time Simulation result Simulation Evaluation Circuit VDD VOUT OUTPUT R1 1 - + U1 10k TC75S59F V1 VIN- VSS VIN+ 1 5 V1 = -100m V4 V2 = 100m TD = 1u TR = 10n TF = 10n PW = 5u PER = 10u 0 Comparison Table Over drive=100mV Measurement Simulation %Error tPLH (ns) 200 193.856 -3.072 tPHL (ns) 80 81.214 1.518 tr (ns) 160 159.177 -0.514 tf (ns) 3 2.9152 -2.827 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 6. Input Bias Current and Input Offset Current Characteristics Simulation result Ib Ios Evaluation Circuit VDD VOUT - + U3 V3 TC75S59F 5 VIN- VSS VIN+ R1 1k V2 V1 0 0 0 Comparison Table Measurement Simulation %Error Ib (pA) 1 1 0 Ios(pA) 1 1 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 7. Input Offset Voltage Characteristics Simulation result Simulation Evaluation Circuit VDD VOUT OUTPUT R1 1 - + U3 TC75S59F 10k VIN- VSS VIN+ V3 1 5 V1 0 0 Comparison Table Measurement Simulation %Error Vio(mV) 1 1.005 0.5 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 8. Voltage Gain Characteristics Simulation result Simulation Evaluation Circuit OUTPUT VDD VOUT R1 1 10k - + U1 V3 1 TC75S59F 5 VIN- VSS VIN+ IN V1 VOFF = 1.005m VAMPL = 0 FREQ = 0 AC = 1m 0 Comparison Table Measurement Simulation %Error Av (dB) 94 94.05 0.053 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005