The document consists of a device modeling report for the LM311H voltage comparator, detailing its characteristics and simulation results. It includes various measurements and error percentages related to output voltage, response times, input offset voltage, and input bias current. Simulation evaluations indicate negligible errors in performance metrics, validating the model's accuracy.

1. Device Modeling Report
COMPONENTS : VOLTAGE COMPARATOR
PART NUMBER : LM311H
MANUFACTURER : NATIONAL
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

2. BJT MODEL
Pspice model
Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
CJC Zero-bias Collector-Base Junction Capacitance
TF Forward Transit Time
TR Reverse Transit Time
DIODE MODEL
Pspice model
Model description
parameter
IS Saturation Current
RS Series Resistance
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

3. Output Low Voltage
Simulation result
Simulation
Evaluation Circuit
U1 V+
GND O/P
IN+ + BAL/STR
-
IN- BAL
LM311HV-
V4 V1 I1 V2
1.55 V3
-15 50m
15
1.56
0
Compasion Table
IO = 50mA Measurement Simulation %Error
Vol (V) 0.75 0.749735 -0.035
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

4. Response time (Rise time and Transition time)
Simulation result
OUTPUT
Evaluation Circuit
U2 V+
GND O/P
Tr
IN+ + BAL/STR
-
RL1 V7
IN- BAL
500
LM311HV- 15
V1 = -5m V5 V8
V2 = 100m V6
TD = 0
TR = 0 5
TF = 0 -15
PW = 5u
PER = 10u
0
Compasion Table
Measurement Simulation % Error
Rising delay time (us) 0.125 0.124079 -0.737
Transition time (us) 0.140 0.13897 -0.736
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

5. Response time (Falling time)
Simulation result
OUTPUT
Evaluation Circuit
U1 V+
GND O/P
Tf
IN+ + BAL/STR
- RL
IN- BAL 500
LM311HV- V2 V3
V1 = -100m V1
V2 = 5m 15
TD = 0 V4 5
TR = 0
TF = 0
PW = 5u -15
PER = 10u
0
Compasion Table
Measurement Simulation % Error
Falling delay time (us) 0.175 0.174974 -0.015
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

6. Input Offset Voltage Characteristics
Simulation result
Simulation
Evaluation Circuit
U1 V+
GND O/P
output1
R1 IN+ + BAL/STR
-
1k
IN- BAL
LM311HV- V3
15
V1 V2
-15
0
0
Compasion Table
Measurement Simulation %Error
Vio(mV) 2 1.9965 -0.175
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

7. Av Characteristics
Simulation result
Simulation
Evaluation Circuit
U1 V+
GND O/P
output
R1 IN+ + BAL/STR
in
-
1k V2
IN- BAL
1.9965m LM311HV- V3
15
V1 V4
-15
0
0
Av = 24.880 / 124.733u
Compasion Table
RL = 1k Measurement Simulation %Error
Av (V/mV) 200 199.466 -0.267
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

8. Input Bias Current Characteristics
Simulation result
Ib
IIO
Evaluation Circuit
U1 V+ R1
GND O/P
1k
IN+ + BAL/STR
-
IN- BAL
LM311HV-
V3
V1 V2 V4 15
-15
0Vdc 0Vdc
0
Compasion Table
Measurement Simulation % Error
Ib (nA) 100 100.059 0.059
IIO (nA) 6 6.0075 0.125
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004