SPICE MODEL of TC75S58FU in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS : VOLTAGE COMPARATOR (CMOS)
PART NUMBER : TC75S58FU
MANUFACTURER : TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

2. MODEL PARAMETER
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

3. Output Low Voltage
Simulation result
Simulation
Evaluation Circuit
VDD VOUT
Vol
U3
- +
tc75s58f
VIN- VSS VIN+
V2 I1
5
V1 5m
1
0
Comparison Table
Isink=5mA Measurement Simulation %Error
Vol (V) 0.1 0.097472 -2.528
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

4. Output Sink Current
Simulation result
Simulation
Evaluation Circuit
VDD VOUT
U4
- +
tc75s58f
VIN- VSS VIN+
Vsink
0.5
5 V3
V4
1
0
Comparison Table
VOL = 0.5 V Measurement Simulation %Error
Isink (mA) 25 24.375 -2.50
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

5. Propagation Delay Time and Response Time
Simulation result
Simulation
Evaluation Circuit
VDD VOUT
TPLH
U2
R1
- +
tc75s58f 10k
VIN- VSS VIN+
1
1
V3 V6 V1 = -100m
5 V5 V2 = 100m
0 TD = 1u
TR = 10n
TF = 10n
PW = 5u
PER = 10u
0
Comparison Table
Over drive=100mV Measurement Simulation %Error
tPLH (ns) 800 811.041 1.380
tPHL (ns) 230 235.854 2.545
tr (ns) 190 193.854 2.028
tf (ns) 6 5.8936 -1.773
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

6. Input Bias Current and Input Offset Current Characteristics
Simulation result
Ib
Ios
Evaluation Circuit
VDD VOUT
- + U3
V3 TC75S59F
5
VIN- VSS VIN+ R1
1k
V2 V1
0
0
0
Comparison Table
Measurement Simulation %Error
Ib (pA) 1 0.9988 -0.120
Ios(pA) 1 0.9983 -0.170
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

7. Input Offset Voltage Characteristics
Simulation result
Simulation
Evaluation Circuit
VDD VOUT
U2
output
- +
tc75s58f
R1
VIN- VSS VIN+
1 10k
V3
5
1
V1
0
0
Comparison Table
Measurement Simulation %Error
Vio(mV) 1 0.995 -0.5
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

8. Voltage Gain Characteristics
Simulation result
Simulation
Evaluation Circuit
OUTPUT
VDD VOUT
U2 R1
1 10k
- +
V3 1
tc75s58f
5
VIN- VSS VIN+
IN
V2 V1 VOFF = 0.995m
0 VAMPL = 0
FREQ = 0
AC = 1M
0
Comparison Table
Measurement Simulation %Error
Av (dB) 94 93.542 -0.487
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005