SPICE MODEL of IRG4PC50KD (Standard+FWDP Model) in SPICE PARK
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SPICE MODEL of IRG4PC50KD (Standard+FWDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of IRG4PC50KD (Standard+FWDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Insulated Gate Bipolar Transistor (IGBT) PART NUMBER: IRG4PC50KD MANUFACTURER: International Rectifier REMARK: Free-Wheeling Diode (Professional Model) Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
- 2. Pspice model Model description parameter TAU Ambipolar Recombination Lifetime KP MOS Transconductance AREA Area of the Device AGD Gate-Drain Overlap Area WB Metallurgical Base Width VT Threshold Voltage KF Triode Region Factor CGS Gate-Source Capacitance per Unit Area COXD Gate-Drain Oxide Capacitance per Unit Area VTD Gate-Drain Overlap Depletion Threshold All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
- 3. Transfer Characteristics Circuit Simulation result Evaluation circuit V3 0Vdc V2 U2 10Vdc U1 DIRG4PC50KD V1 IRG4PC50KD 0Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
- 4. Comparison Graph Circuit Simulation Result Simulation Result Test condition : Vce = 10 V Vge(V) Ic(A) Error (%) Measurement Simulation 1 7 7.0434 0.62000 2 7.23 7.2251 -0.06777 5 7.62 7.5851 -0.45801 10 8.02 8.00 -0.24938 20 8.55 8.5794 0.34386 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
- 5. Fall Time Characteristics Circuit Simulation result Evaluation circuit V3 0Vdc R1 R2 U2 16 U1 5 V1 = 0 DIRG4PC50KD V4 IRG4PC50KD V2 V2 = 15 480Vdc TD = 0 TR = 10n TF = 10n PW = 5u PER = 100m 0 Test condition Ic=30(A) ,Vcc=480(V) Measurement Simulation tf 95[Typ.]~140[Max.] ns 112.790 ns All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
- 6. Gate Charge Characteristics Circuit Simulation result Evaluation circuit V3 0Vdc D1 30Adc U2 I2 U1 Dbreak PER = 1m W1 DIRG4PC50KD PW = 500u + IRG4PC50KD V2 TF = 10n - TR = 10n TD = 0 W 400Vdc I2 = 2m IOFF = 100uA I1 = 0 I1 ION = 0A 0 Test condition : Vcc=400(V) ,Ic=30(A) ,Vge=14(V) Measurement Simulation Error(%) Qge 25 nc 25.2785 nc 1.11400 Qgc 85 nc 87.253 nc 2.65059 Qg 182 nc 180.659 nc -0.73681 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
- 7. Saturation Characteristics Circuit Simulation result Evaluation circuit V3 0Vdc U2 U1 0Adc I1 DIRG4PC50KD IRG4PC50KD V1 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
- 8. Comparison Graph Circuit Simulation Result Simulation Result Vce(sat)(V) Ic(A) Error (%) Measurement Simulation 2 1.01 0.948462 -6.09287 5 1.24 1.2406 0.04839 10 1.40 1.3998 -0.01429 20 1.58 1.5800 0.00000 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
- 9. Forward Current Characteristic Circuit Simulation Result Evaluation circuit R1 10m V1 U1 0Vdc DIRG4PC50KD 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
- 10. Circuit Simulation Result Comparison graph Simulation Result Vfwd(V) Vfwd(V) Ifwd (A) %Error Measurement Simulation 0.01 0.43 0.43072 0.16744 0.02 0.465 0.463218 -0.38323 0.05 0.51 0.510821 0.16098 0.1 0.55 0.551433 0.26055 0.2 0.595 0.600523 0.92824 0.5 0.68 0.684186 0.61559 1 0.755 0.763061 1.06768 2 0.84 0.861770 2.59167 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
- 11. Junction Capacitance Characteristic Circuit Simulation Result Evaluation circuit V1 = 0 V2 = 100 V2 TD = 0 DIRG4PC50KD TR = 1u TF = 1u U1 PW = 1u PER = 10u 0 Circuit Simulation Result All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
- 12. Comparison graph Simulation Result Cj(pF) Cj(pF) Vrev (V) %Error Measurement Simulation 2 1409.8 1405.2 -0.32629 5 883.66 892.436 0.99314 10 604.62 621.149 2.73378 20 426.25 429.554 0.77513 50 264.96 259.686 -1.99049 100 177.89 177.871 -0.01068 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
- 13. Reverse Recovery Characteristic Circuit Simulation Result Evaluation circuit R1 50 V1 = -9.5 V2 = 10.75 TD = 0 V2 U1 TR = 10n TF = 10n DIRG4PC50KD PW = 10u PER = 50u 0 Compare Measurement vs. Simulation Measurement Simulation Error(%) trj 64 ns 64.335 ns 0.52344 trb 136 ns 135.78 ns -0.16176 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
- 14. Reverse Recovery Characteristic Reference Measurement trj=64(ns) trb=136(ns) Conditions:Ifwd=Irev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2004