The document is a device modeling report for an Insulated Gate Bipolar Transistor (IGBT) manufactured by Toshiba. It includes the part number, simulations of the IGBT's transfer characteristics, comparison graphs between measured and simulated values, and evaluations of the IGBT's fall time, gate charge, saturation, forward current, and reverse recovery characteristics. Simulation results show good agreement with measurements, with most errors under 2%.

1. Device Modeling Report
COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: GT15J321
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
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2. Circuit Configuration
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3. Transfer Characteristics
Circuit Simulation result
Evaluation circuit
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4. Comparison Graph
Simulation result
Comparison table
Test condition: VCE =5 (V)
VGE (V)
IC (A) %Error
Measurement Simulation
1 6.700 6.769 1.02
2 6.900 6.969 1.01
5 7.280 7.380 1.37
10 7.800 7.863 0.81
15 8.200 8.248 0.58
20 8.550 8.582 0.38
25 8.800 8.885 0.96
30 9.050 9.165 1.27
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5. Fall Time Characteristics
Circuit Simulation result
Time
Evaluation circuit
Test condition: IC=15 (A), VCC=300 (V), VGE= 15 (V), RG=43(Ω)
Parameter Unit Measurement Simulation %Error
tf us 0.030 0.030 -1.417
toff us 0.340 0.343 0.845
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6. Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VCC=300 (V), IC=15 (A), VGE=15 (V)
Parameter Unit Measurement Simulation %Error
Qge nc 20.000 20.000 0.000
Qgc nc 30.000 30.000 0.000
Qg nc 85.000 88.076 3.619
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7. Saturation Characteristics
Circuit Simulation result
Evaluation circuit
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8. Comparison Graph
Simulation result
Comparison table
Test condition: VGE =15 (V)
VCE (V)
Ic(A) %Error
Measurement Simulation
1 0.915 0.956 4.51
2 1.050 1.060 0.96
5 1.330 1.314 -1.23
10 1.650 1.648 -0.13
15 1.900 1.916 0.85
20 2.150 2.148 -0.09
25 2.380 2.369 -0.45
30 2.600 2.605 0.19
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9. Output Characteristics
Circuit Simulation result
20V 15V 9V
8V
VGE=7V
Evaluation circuit
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10. FWD Forward Current Characteristics
Circuit Simulation result
Evaluation circuit
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11. Comparison Graph
Simulation result
Comparison table
VF (V)
IF(A) %Error
Measurement Simulation
1 1.090 1.093 0.23
2 1.170 1.162 -0.71
5 1.260 1.269 0.73
10 1.375 1.377 0.11
15 1.460 1.459 -0.08
20 1.538 1.531 -0.46
25 1.600 1.598 -0.15
30 1.655 1.661 0.34
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12. Reverse Recovery Characteristics
Circuit Simulation result
Time
Evaluation circuit
Test condition: VCC=300 (V), IF=15 (A), –di/dt=100 A/usec
Parameter Unit Measurement Simulation %Error
trr ns 110.000 117.335 6.668
Irr A 4.200 4.157 -1.03
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