SPICE MODEL of GT15J321 (Professional+FWD+SP LTspice Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: GT15J321
MANUFACTURER: TOSHIBA
* REMARK: Free-Wheeling Diode Special Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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2. Circuit Configuration
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3. Transfer Characteristics
Circuit Simulation result
Evaluation circuit
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4. Comparison Graph
Simulation result
Comparison table
Test condition: VCE =5 (V)
VGE (V)
IC (A) %Error
Measurement Simulation
1 6.700 6.769 1.02
2 6.900 6.969 1.01
5 7.280 7.380 1.37
10 7.800 7.863 0.81
15 8.200 8.248 0.58
20 8.550 8.582 0.38
25 8.800 8.885 0.96
30 9.050 9.165 1.27
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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5. Fall Time Characteristics
Circuit Simulation result
Time
Evaluation circuit
Test condition: IC=15 (A), VCC=300 (V), VGE= 15 (V), RG=43(Ω)
Parameter Unit Measurement Simulation %Error
tf us 0.030 0.030 -1.072
toff us 0.340 0.346 1.838
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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6. Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VCC=300 (V), IC=15 (A), VGE=15 (V)
Parameter Unit Measurement Simulation %Error
Qge nc 20.000 20.000 0.000
Qgc nc 30.000 30.000 0.000
Qg nc 85.000 88.038 3.574
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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7. Saturation Characteristics
Circuit Simulation result
Evaluation circuit
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8. Comparison Graph
Simulation result
Comparison table
Test condition: VGE =15 (V)
VCE (V)
Ic(A) %Error
Measurement Simulation
1 0.915 0.956 4.51
2 1.050 1.060 0.96
5 1.330 1.314 -1.23
10 1.650 1.648 -0.13
15 1.900 1.916 0.85
20 2.150 2.148 -0.09
25 2.380 2.369 -0.45
30 2.600 2.605 0.19
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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9. Output Characteristics
Circuit Simulation result
20V 15V 9V
8V
VGE=7V
Evaluation circuit
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10. FWD Forward Current Characteristics
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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11. Comparison Graph
Simulation result
Comparison table
VF (V)
IF(A) %Error
Measurement Simulation
1 1.090 1.093 0.23
2 1.170 1.162 -0.71
5 1.260 1.269 0.73
10 1.375 1.377 0.11
15 1.460 1.459 -0.08
20 1.538 1.531 -0.46
25 1.600 1.598 -0.15
30 1.655 1.661 0.34
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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12. Reverse Recovery Characteristics
Circuit Simulation result
Time
Evaluation circuit
Test condition: VCC=300 (V), IF=15 (A), –di/dt=100 A/usec
Parameter Unit Measurement Simulation %Error
trr ns 110.000 109.810 -0.173
Irr A 4.200 4.208 0.185
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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