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Device Modeling Report




COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: 1MBC03-120
MANUFACTURER: Fuji Electric




                     Bee Technologies Inc.




       All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
                                                                      1
Transfer Characteristics

Circuit Simulation result

                 6.0A


                 5.0A


                 4.0A


                 3.0A


                 2.0A


                 1.0A


                     0A
                          0V             4V     8V           12V    16V       20V
                               I(U1:C)
                                                     V_VGE




Evaluation circuit




                                          U1
                                   1MBC03-120

                                                                     VCE
                                                                     5Vdc
                                   VGE
                                   15Vdc




                                                0




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
                                                                                    2
Comparison Graph

Simulation result




Comparison table


Test condition: VCE =5 (V)


                                             VGE (V)
               IC (A)                                                       %Error
                               Measurement            Simulation
                     0.050                 8.000                7.899              -1.26
                     2.650               10.000                 9.981              -0.19
                     5.800               12.000                12.038              0.32




                    All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
                                                                                           3
Fall Time Characteristics

Circuit Simulation result


                 3.0A



                 2.5A



                 2.0A



                 1.5A



                 1.0A



                 0.5A



                     0A
                     2.0us                   3.0us           4.0us            5.0us      6.0us
                         I(RL)
                                                                 Time




Evaluation circuit




                                                                                RL
                                                Rg     U1                       239
                                                1MBC03-120
                            V1 = -15
                            V2 = 15             430
                            TD = 0      V1
                            TR = 10n                                            VCE
                            TF = 10n                                            600Vdc
                            PW = 3u
                            PER = 20u

                                                             0




Test condition: IC=2.5 (A), VCC=600 (V)


       Parameter        Unit            Measurement                     Simulation        %Error
            tf           us                             0.280                   0.282            0.565




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
                                                                                                         4
Gate Charge Characteristics

Circuit Simulation result


                 25V




                 20V




                 15V




                 10V




                      5V



                      0V
                           0                20n                      40n                   60n
                               V(W1:1)
                                                      Time*1mA




Evaluation circuit
                                                                           V2



                                                                           0

                                                          U1                                 I1
                                                   1MBC03-120                     D2
                                                                                  Dbreak     2.5

                     I1 = 0                W1
                     I2 = 1m                 +
                     TF = 10n                                                                V3
                     TR = 10n                -
                     TD = 0        I2      W
                     PER = 500m            IOFF = 100uA                                      600
                     PW = 5m               ION = 0A


                                                                 0




Test condition: VCC=600 (V), IC=2.5 (A), VGE=15 (V)


         Parameter                Unit   Measurement                 Simulation             %Error
             Qge                  nc                12.000                      11.927             -0.608
             Qgc                  nc                11.000                      10.833             -1.518
              Qg                  nc                33.500                      34.034             1.594

                       All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
                                                                                                            5
Saturation Characteristics

Circuit Simulation result

                     5.0A



                     4.0A



                     3.0A



                     2.0A



                     1.0A



                       0A
                            0V       0.5V      1.0V    1.5V    2.0V     2.5V   3.0V     3.5V
                                  I(IC)
                                                              V(IC:-)




Evaluation circuit




                                                       U1
                                                1MBC03-120
                                                                                      IC
                                                                                      0Adc
                                         VGE
                                 15Vdc




                                                               0




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
                                                                                               6
Comparison Graph

Simulation result




Comparison table


Test condition: VGE =15 (V)

                                        VF (V)
                IF(A)                                                     %Error
                              Measurement      Simulation
                      1.00           2.100            2.098                        -0.11
                      2.00           2.600            2.612                         0.46
                      3.00           3.050            3.033                        -0.57
                      4.00                3.400                3.412               0.34
                      5.00                3.800                3.797               -0.07




                    All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
                                                                                           7
Output Characteristics

Circuit Simulation result

                     5.0A
                                                                             20V
                                                                                      15V
                     4.0A
                                                                                           12V

                     3.0A
                                                                                            10V

                     2.0A



                     1.0A


                                                                                            VGE=8V
                       0A
                            0V           1.0V               2.0V           3.0V           4.0V    5.0V
                                  I(U1:C)
                                                                   V_VCE



Evaluation circuit




                                                      U1                                   VCE
                                               1MBC03-120                          5Vdc


                                 15Vdc   VGE




                                                                   0




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
                                                                                                         8

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SPICE MODEL of 1MBC03-120 (Professional Without Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: Insulated Gate Bipolar Transistor (IGBT) PART NUMBER: 1MBC03-120 MANUFACTURER: Fuji Electric Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 1
  • 2. Transfer Characteristics Circuit Simulation result 6.0A 5.0A 4.0A 3.0A 2.0A 1.0A 0A 0V 4V 8V 12V 16V 20V I(U1:C) V_VGE Evaluation circuit U1 1MBC03-120 VCE 5Vdc VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 2
  • 3. Comparison Graph Simulation result Comparison table Test condition: VCE =5 (V) VGE (V) IC (A) %Error Measurement Simulation 0.050 8.000 7.899 -1.26 2.650 10.000 9.981 -0.19 5.800 12.000 12.038 0.32 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 3
  • 4. Fall Time Characteristics Circuit Simulation result 3.0A 2.5A 2.0A 1.5A 1.0A 0.5A 0A 2.0us 3.0us 4.0us 5.0us 6.0us I(RL) Time Evaluation circuit RL Rg U1 239 1MBC03-120 V1 = -15 V2 = 15 430 TD = 0 V1 TR = 10n VCE TF = 10n 600Vdc PW = 3u PER = 20u 0 Test condition: IC=2.5 (A), VCC=600 (V) Parameter Unit Measurement Simulation %Error tf us 0.280 0.282 0.565 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 4
  • 5. Gate Charge Characteristics Circuit Simulation result 25V 20V 15V 10V 5V 0V 0 20n 40n 60n V(W1:1) Time*1mA Evaluation circuit V2 0 U1 I1 1MBC03-120 D2 Dbreak 2.5 I1 = 0 W1 I2 = 1m + TF = 10n V3 TR = 10n - TD = 0 I2 W PER = 500m IOFF = 100uA 600 PW = 5m ION = 0A 0 Test condition: VCC=600 (V), IC=2.5 (A), VGE=15 (V) Parameter Unit Measurement Simulation %Error Qge nc 12.000 11.927 -0.608 Qgc nc 11.000 10.833 -1.518 Qg nc 33.500 34.034 1.594 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 5
  • 6. Saturation Characteristics Circuit Simulation result 5.0A 4.0A 3.0A 2.0A 1.0A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V I(IC) V(IC:-) Evaluation circuit U1 1MBC03-120 IC 0Adc VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 6
  • 7. Comparison Graph Simulation result Comparison table Test condition: VGE =15 (V) VF (V) IF(A) %Error Measurement Simulation 1.00 2.100 2.098 -0.11 2.00 2.600 2.612 0.46 3.00 3.050 3.033 -0.57 4.00 3.400 3.412 0.34 5.00 3.800 3.797 -0.07 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 7
  • 8. Output Characteristics Circuit Simulation result 5.0A 20V 15V 4.0A 12V 3.0A 10V 2.0A 1.0A VGE=8V 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(U1:C) V_VCE Evaluation circuit U1 VCE 1MBC03-120 5Vdc 15Vdc VGE 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 8