SPICE MODEL of GT25Q101 (Standard Without Model) in SPICE PARK
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SPICE MODEL of GT25Q101 (Standard Without Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of GT25Q101 (Standard Without Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Insulated Gate Bipolar Transistor (IGBT) PART NUMBER: GT25Q101 MANUFACTURER: TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 2. PSpice model Model description parameter TAU Ambipolar Recombination Lifetime KP MOS Transconductance AREA Area of the Device AGD Gate-Drain Overlap Area WB Metallurgical Base Width VT Threshold Voltage KF Triode Region Factor CGS Gate-Source Capacitance per Unit Area COXD Gate-Drain Oxide Capacitance per Unit Area VTD Gate-Drain Overlap Depletion Threshold All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 3. Transfer Characteristics Circuit Simulation result Evaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 4. Comparison Graph Circuit Simulation Result Simulation Result Test condition : Vce = 5 V Vge(V) Ic(A) Error (%) Measurement Simulation 2 5.5 5.7480 4.50909 5 6.3 6.2677 -0.51270 10 6.9 6.8661 -0.49130 20 7.7 7.7165 0.21429 25 8 8.0787 0.98375 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 5. Fall Time Characteristics Circuit Simulation result Evaluation circuit Test condition Ic=25(A) ,Vce=600(V) Measurement Simulation Error tf 0.3 us 0.301233 us 0.4110 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 6. Gate Charge Characteristics Circuit Simulation result Evaluation circuit V2 0Vdc U6 GT25Q101 I1 D1 Dbreak W1 + 25Adc - TD = 0 W TF = 10n I2 PW = 500u IOFF = 100uA PER = 1m ION = 0A 400Vdc Vce I1 = 0 I2 = 2m TR = 10n 0 Test condition : Vce=400(V) ,Ic=25(A) ,Vge=12.5(V) Measurement Simulation Error(%) Qge 34 nc 34.506 nc 1.48824 Qgc 82 nc 82.857 nc 1.04512 Qg 174 nc 170.550 nc -1.98276 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 7. Saturation Characteristics Circuit Simulation result Evaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 8. Comparison Graph Circuit Simulation Result Simulation Result Vce(sat)(V) Ic(A) Error (%) Measurement Simulation 1 1.3 1.2467 -4.10000 2 1.4 1.4488 3.48571 5 1.7 1.7247 1.45294 10 2 1.9604 -1.98000 20 2.4 2.4204 0.85000 25 2.6 2.5920 -0.30769 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005