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Device Modeling Report




COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: GT15J321
MANUFACTURER: TOSHIBA
* REMARK: Free-Wheeling Diode Special Model




                    Bee Technologies Inc.

       All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                      1
Circuit Configuration

            Collector




     Gate




            Emitter




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                     2
Transfer Characteristics

Circuit Simulation result


                 30A



                 25A



                 20A



                 15A



                 10A



                     5A



                     0A
                          0V               4V        8V             12V     16V    20V
                               I(U1:C)
                                                            V_VGE




Evaluation circuit




                                                             U2
                                                             DGT15J321_SP
                                                                            VCE
                                                                            5Vdc

                                         VGE     U1
                                         15Vdc   GT15J321



                                                     0




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                         3
Comparison Graph

Simulation result




Comparison table


Test condition: VCE =5 (V)


                                             VGE (V)
               IC (A)                                                       %Error
                              Measurement             Simulation
                         1                6.700                 6.769              1.02
                         2                6.900                 6.969              1.01
                         5                7.280                 7.380              1.37
                        10                7.800                 7.863              0.81
                        15                8.200                 8.248              0.58
                        20                8.550                 8.582              0.38
                        25                8.800                 8.885              0.96
                        30                9.050                 9.165              1.27




                    All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                          4
Fall Time Characteristics

Circuit Simulation result

                  20V




                   0V
                        V(U1:G)
                  20A




                 SEL>>
                   -5A
                    9.4us      9.8us                     10.2us                     10.6us     11.0us   11.4us
                        I(U1:C)
                                                                        Time



Evaluation circuit


                                                                        D2
                                                  RG2                   DGT15J321


                                               -VGE
                                               15Vdc43   U2               L1
                                                         GT15J321       20mH
                                                                    2               1
                                                                        IC = 15
                                                                                               VCE
                                                                                               300



                                                                        U3
                                                 Rg                     DGT15J321_SP
                            V1 = 0
                            V2 = 15
                            TD = 5u       V1     43
                            TR = 10n                     U1
                            TF = 10n                     GT15J321
                            PW = 4.998u
                            PER = 100u

                                                               0




Test condition: IC=15 (A), VCC=300 (V), VGE= 15 (V), RG=43(Ω)


       Parameter        Unit          Measurement                                       Simulation         %Error
            tf           us                                  0.030                             0.029             -3.880
           toff          us                                  0.340                             0.342             0.684



                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                                                          5
Gate Charge Characteristics

Circuit Simulation result

               20V




               16V




               12V




                 8V




                 4V




                 0V
                      0               20n        40n              60n                80n        100n
                          V(W1:1)
                                                       Time*1mA




Evaluation circuit


                                                                      V2



                                                                      0
                                                                                                IC
                                                                           U2          D2
                                                                           DGT15J321_SPDbreak   15

                  I1 = 0
                  I2 = 1m                   W1    W
                  TF = 10n                   +    IOFF = 100uA                                  VCC
                  TR = 10n                        ION = 0A        U1
                  TD = 0         I2          -                    GT15J321                      300
                  PER = 700m
                  PW = 7m
                                                                  0




Test condition: VCC=300 (V), IC=15 (A), VGE=15 (V)


       Parameter           Unit         Measurement                Simulation                    %Error
           Qge              nc                   20.000                           20.000               0.000
           Qgc              nc                   30.000                           30.000               0.000
           Qg               nc                   85.000                           88.038               3.574

                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                                               6
Saturation Characteristics

Circuit Simulation result

                     50A




                     40A




                     30A




                     20A




                     10A




                      0A
                           0V            1.0V   2.0V             3.0V      4.0V   5.0V
                                I(IC)
                                                       V(IC:-)




Evaluation circuit




                                                            U2
                                                            DGT15J321_SP
                                                                           IC
                                                                           0Adc
                                         VGE    U1
                                 15Vdc          GT15J321




                                                       0




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                         7
Comparison Graph

Simulation result




Comparison table


Test condition: VGE =15 (V)


                                             VCE (V)
               Ic(A)                                                        %Error
                              Measurement             Simulation
                         1                0.915                 0.956              4.51
                         2                1.050                 1.060              0.96
                         5                1.330                 1.314              -1.23
                        10                1.650                 1.648              -0.13
                        15                1.900                 1.916              0.85
                        20                2.150                 2.148              -0.09
                        25                2.380                 2.369              -0.45
                        30                2.600                 2.605              0.19




                    All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                           8
Output Characteristics

Circuit Simulation result


                 50A




                 40A




                 30A
                                                       20V        15V                 9V

                 20A



                                                                                      8V
                 10A


                                                                                 VGE=7V
                     0A
                          0V                 1.0V       2.0V           3.0V    4.0V    5.0V
                               I(R1)
                                                               V_VCE




Evaluation circuit

                                                                       R1

                                                                   0.001m



                                                                U2
                                                                DGT15J321_SP   VCE
                                                                               5Vdc


                                       VGE          U1
                                       0            GT15J321




                                                          0




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                              9
FWD Forward Current Characteristics

Circuit Simulation result

                     30A




                     25A




                     20A




                     15A




                     10A




                      5A




                      0A
                           0V               0.4V           0.8V           1.2V        1.6V   2.0V
                                I(Vsense)
                                                                  V(EC)




Evaluation circuit

                                                   Vsense
                                                                                 V1
                                     EC
                                                   0Vdc

                                                                                  0Vdc
                                                                   U2
                                      V2                  DGT15J321_SP           U1
                                                                                 GT15J321




                                                             0




                       All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                                    10
Comparison Graph

Simulation result




Comparison table


                                              VF (V)
               IF(A)                                                        %Error
                              Measurement              Simulation
                         1                1.090                 1.093              0.23
                         2                1.170                 1.162              -0.71
                         5                1.260                 1.269              0.73
                        10                1.375                 1.377              0.11
                        15                1.460                 1.459              -0.08
                        20                1.538                 1.531              -0.46
                        25                1.600                 1.598              -0.15
                        30                1.655                 1.661              0.34




                    All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                           11
Reverse Recovery Characteristics

Circuit Simulation result

              15A




                  0A




              -5A
               5.04us      5.12us             5.20us            5.28us         5.36us    5.44us
                    I(Vsense)
                                                       Time



Evaluation circuit

                                              R1       Vsense
                                                                     PARAMETERS:
                            V1 = -300V                               TR = 0.3u
                                            19.9
                            V2 = 300V

                            TD = 5.15us                                  U1
                                                                         DGT15J321_SP
                            TR = {TR}

                            TF = 10n      V1
                                          VPULSE
                            PW = 10u

                            PER = 1ms

                                                       0




Test condition: VCC=300 (V), IF=15 (A), –di/dt=100 A/usec

       Parameter          Unit          Measurement               Simulation               %Error
            trr            ns                  110.000                      109.948               -0.047
            Irr             A                      4.200                         4.216            0.383



                       All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                                           12

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SPICE MODEL of GT15J321 (Professional+FWD+SP PSpice Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: Insulated Gate Bipolar Transistor (IGBT) PART NUMBER: GT15J321 MANUFACTURER: TOSHIBA * REMARK: Free-Wheeling Diode Special Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
  • 2. Circuit Configuration Collector Gate Emitter All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
  • 3. Transfer Characteristics Circuit Simulation result 30A 25A 20A 15A 10A 5A 0A 0V 4V 8V 12V 16V 20V I(U1:C) V_VGE Evaluation circuit U2 DGT15J321_SP VCE 5Vdc VGE U1 15Vdc GT15J321 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
  • 4. Comparison Graph Simulation result Comparison table Test condition: VCE =5 (V) VGE (V) IC (A) %Error Measurement Simulation 1 6.700 6.769 1.02 2 6.900 6.969 1.01 5 7.280 7.380 1.37 10 7.800 7.863 0.81 15 8.200 8.248 0.58 20 8.550 8.582 0.38 25 8.800 8.885 0.96 30 9.050 9.165 1.27 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
  • 5. Fall Time Characteristics Circuit Simulation result 20V 0V V(U1:G) 20A SEL>> -5A 9.4us 9.8us 10.2us 10.6us 11.0us 11.4us I(U1:C) Time Evaluation circuit D2 RG2 DGT15J321 -VGE 15Vdc43 U2 L1 GT15J321 20mH 2 1 IC = 15 VCE 300 U3 Rg DGT15J321_SP V1 = 0 V2 = 15 TD = 5u V1 43 TR = 10n U1 TF = 10n GT15J321 PW = 4.998u PER = 100u 0 Test condition: IC=15 (A), VCC=300 (V), VGE= 15 (V), RG=43(Ω) Parameter Unit Measurement Simulation %Error tf us 0.030 0.029 -3.880 toff us 0.340 0.342 0.684 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
  • 6. Gate Charge Characteristics Circuit Simulation result 20V 16V 12V 8V 4V 0V 0 20n 40n 60n 80n 100n V(W1:1) Time*1mA Evaluation circuit V2 0 IC U2 D2 DGT15J321_SPDbreak 15 I1 = 0 I2 = 1m W1 W TF = 10n + IOFF = 100uA VCC TR = 10n ION = 0A U1 TD = 0 I2 - GT15J321 300 PER = 700m PW = 7m 0 Test condition: VCC=300 (V), IC=15 (A), VGE=15 (V) Parameter Unit Measurement Simulation %Error Qge nc 20.000 20.000 0.000 Qgc nc 30.000 30.000 0.000 Qg nc 85.000 88.038 3.574 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
  • 7. Saturation Characteristics Circuit Simulation result 50A 40A 30A 20A 10A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(IC) V(IC:-) Evaluation circuit U2 DGT15J321_SP IC 0Adc VGE U1 15Vdc GT15J321 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
  • 8. Comparison Graph Simulation result Comparison table Test condition: VGE =15 (V) VCE (V) Ic(A) %Error Measurement Simulation 1 0.915 0.956 4.51 2 1.050 1.060 0.96 5 1.330 1.314 -1.23 10 1.650 1.648 -0.13 15 1.900 1.916 0.85 20 2.150 2.148 -0.09 25 2.380 2.369 -0.45 30 2.600 2.605 0.19 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
  • 9. Output Characteristics Circuit Simulation result 50A 40A 30A 20V 15V 9V 20A 8V 10A VGE=7V 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(R1) V_VCE Evaluation circuit R1 0.001m U2 DGT15J321_SP VCE 5Vdc VGE U1 0 GT15J321 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9
  • 10. FWD Forward Current Characteristics Circuit Simulation result 30A 25A 20A 15A 10A 5A 0A 0V 0.4V 0.8V 1.2V 1.6V 2.0V I(Vsense) V(EC) Evaluation circuit Vsense V1 EC 0Vdc 0Vdc U2 V2 DGT15J321_SP U1 GT15J321 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 10
  • 11. Comparison Graph Simulation result Comparison table VF (V) IF(A) %Error Measurement Simulation 1 1.090 1.093 0.23 2 1.170 1.162 -0.71 5 1.260 1.269 0.73 10 1.375 1.377 0.11 15 1.460 1.459 -0.08 20 1.538 1.531 -0.46 25 1.600 1.598 -0.15 30 1.655 1.661 0.34 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 11
  • 12. Reverse Recovery Characteristics Circuit Simulation result 15A 0A -5A 5.04us 5.12us 5.20us 5.28us 5.36us 5.44us I(Vsense) Time Evaluation circuit R1 Vsense PARAMETERS: V1 = -300V TR = 0.3u 19.9 V2 = 300V TD = 5.15us U1 DGT15J321_SP TR = {TR} TF = 10n V1 VPULSE PW = 10u PER = 1ms 0 Test condition: VCC=300 (V), IF=15 (A), –di/dt=100 A/usec Parameter Unit Measurement Simulation %Error trr ns 110.000 109.948 -0.047 Irr A 4.200 4.216 0.383 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 12