power factor ppt

1. REPORT
Subject: Boost PFC Overview
Group: Boost PFC
Presenter: Vu Trong Hau
Advisor:
Dang Duc Manh
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2. Outline
Introduction
Characteristic
Outline
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3. Introduction
Power Factor
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4/9/2023 3
• PF = the ratio of the real power absorbed by the load to
the apparent power flowing in the circuit.
• 𝑃𝐹 =
𝑃
S
• 𝑃 =
1
T 0
T
v t . i(t) = V0I0 + n=1
∞
VnIncos(𝜑n − 𝜃n) (W)
S(Apparent Power) P(Real Power)
Q(Reactive Power)
• S = VRMSIRMS (VA)

4. Modeling
Modeling ideal
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Parasitics capacitance
• Feedback capacitance Crss = Cgd
• Input capacitance Ciss = Cgs + Cgd
• Output capacitance Coss = Cds + Cgd
Stray inductance( dual to packaging )
1 inch length ~ 22nH

5. Characteristic
Characteristic
• Static characteristics of [1] MOSFET
Ohmic
region
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6. Characteristic
Characteristic
• Static characteristics of MOSFET
Ohmic region  MOSFET ≡ (Dynamic) resistor
RDS, on depends on Gate voltage, Temp [1]
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7. Characteristic
MOSFET Turn-On Time Intervals
Equivalent circuit
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Characteristic
• Dynamic characteristics
of MOSFET [4]

8. Characteristic
MOSFET Turn-On Time Intervals
Equivalent circuit
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Characteristic
• Dynamic characteristics
of MOSFET [4]
Source: [4]

9. Characteristic
MOSFET Turn-Off Time Intervals
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Equivalent circuit
Characteristic
• Dynamic characteristics
of MOSFET [4]
Source: [4]

10. Characteristic
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Characteristic
• Effects of Parasitic Components
 The source bond wire neatly
integrated into the MOSFET package
 The printed circuit board wiring
inductance
The source inductor and the CISS
capacitor form a resonant circuit [3]

11. Lossing
Lossing
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[1]

12. References
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[1] “Mosfet and IGBT” , Slide ĐTCS – Duy-Dinh Nguyen
[2] “Power MOSFET Structure and Characteristics”, TOSHIBA
[3] “Power MOSFET Basics”. www.infineon.com
[4] “Fundamentals of MOSFET”, TI.com
[5] “Fundamentals of MOSFET”, IXYS.com

13. Thank you!
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