This document provides information on the 2SJ598 P-channel MOSFET, including its features, specifications, performance characteristics, and packaging. Key details include: - It is designed for solenoid, motor, and lamp driver applications. - Features include low on-resistance of 130mΩ maximum and built-in gate protection diode. - Specifications include maximum ratings for drain-source voltage, drain current, power dissipation, and operating temperature range. - Graphs illustrate characteristics such as on-resistance variation with temperature, gate voltage, and drain current.

1. The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SJ598
SWITCHING
P-CHANNEL POWER MOS FET
DATA SHEET
Document No. D14656EJ4V0DS00 (4th edition)
Date Published August 2004 NS CP(K)
Printed in Japan
2000, 2001
The mark shows major revised points.
DESCRIPTION
The 2SJ598 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
FEATURES
• Low on-state resistance:
RDS(on)1 = 130 mΩ MAX. (VGS = –10 V, ID = –6 A)
RDS(on)2 = 190 mΩ MAX. (VGS = –4.0 V, ID = –6 A)
• Low Ciss: Ciss = 720 pF TYP.
• Built-in gate protection diode
• TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS –60 V
Gate to Source Voltage (VDS = 0 V) VGSS m20 V
Drain Current (DC) (TC = 25°C) ID(DC) m12 A
Drain Current (pulse)
Note1
ID(pulse) m30 A
Total Power Dissipation (TC = 25°C) PT 23 W
Total Power Dissipation (TA = 25°C) PT 1.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current Note2
IAS –12 A
Single Avalanche Energy
Note2
EAS 14.4 mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = –30 V, RG = 25 Ω, VGS = –20 → 0 V
ORDERING INFORMATION
PART NUMBER PACKAGE
2SJ598 TO-251 (MP-3)
2SJ598-Z TO-252 (MP-3Z)
(TO-251)
(TO-252)
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2. Data Sheet D14656EJ4V0DS2
2SJ598
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current IDSS VDS = –60 V, VGS = 0 V –10 µA
Gate Leakage Current IGSS VGS = m16 V, VDS = 0 V m10 µA
Gate Cut-off Voltage VGS(off) VDS = –10 V, ID = –1 mA –1.5 –2.0 –2.5 V
Forward Transfer Admittance | yfs | VDS = –10 V, ID = –6 A 5 11 S
Drain to Source On-state Resistance RDS(on)1 VGS = –10 V, ID = –6 A 102 130 mΩ
RDS(on)2 VGS = –4.0 V, ID = –6 A 131 190 mΩ
Input Capacitance Ciss VDS = –10 V 720 pF
Output Capacitance Coss VGS = 0 V 150 pF
Reverse Transfer Capacitance Crss f = 1 MHz 50 pF
Turn-on Delay Time td(on) ID = –6 A 7 ns
Rise Time tr VGS = –10 V 4 ns
Turn-off Delay Time td(off) VDD = –30 V 35 ns
Fall Time tf RG = 0 Ω 10 ns
Total Gate Charge QG ID = –12 A 15 nC
Gate to Source Charge QGS VDD= –48 V 3 nC
Gate to Drain Charge QGD VGS = –10 V 4 nC
Body Diode Forward Voltage VF(S-D) IF = 12 A, VGS = 0 V 0.98 V
Reverse Recovery Time trr IF = 12 A, VGS = 0 V 50 ns
Reverse Recovery Charge Qrr di/dt = 100 A/µs 100 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25 Ω
50 Ω
L
VDD
VGS = −20 → 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS(−)
D.U.T.
RL
VDD
τ = 1 sµ
Duty Cycle ≤ 1%
VGS
Wave Form
VDS
Wave Form
VGS(−)
10%
90%
VGS
10%
0
VDS(−)
90%90%
td(on) tr td(off) tf
10%
τ
VDS
0
ton toff
PG.
PG.
50 Ω
D.U.T.
RL
VDD
IG = −2 mA
−
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3. Data Sheet D14656EJ4V0DS 3
2SJ598
TYPICAL CHARACTERISTICS (TA = 25°C)
TC - Case Temperature - ˚C
PT-TotalPowerDissipation-W
0 8020 40 60 100 140120 160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
30
25
20
15
10
5
0
FORWARD BIAS SAFE OPERATING AREA
ID-DrainCurrent-A
VDS - Drain to Source Voltage - V
–1
–10
–100
–0.1 –1 –10
TC = 25˚C
Single Pulse
–0.1
–100
Power Dissipation
Lim
ited
RDS(on)
Lim
ited ID(DC)
ID(pulse) PW
=
10
µs100
µs
1
m
s
10
m
sD
C
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TC - Case Temperature - ˚C
dT-PercentageofRatedPower-%
0 4020 60 100 14080 120 160
100
80
60
40
20
0
PW - Pulse Width - s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t)-TransientThermalResistance-˚C/W
10
0.01
0.1
1
100
1000
1 m 10 m 100 m 1 10 100 1000
Single Pulse
10 100
Rth(ch-C) = 5.43˚C/W
µ µ
Rth(ch-A) = 125˚C/W
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4. Data Sheet D14656EJ4V0DS4
2SJ598
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
RDS(on)-DraintoSourceOn-stateResistance-mΩ
0 –5 –10 –15 –20
Pulsed
200
150
100
50
0
ID = –6 A
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID-DrainCurrent-A
Pulsed
–1 –2 –3 –4 –5
VDS = –10 V
–10
–1
–0.1
–100
TA = −55˚C
25˚C
75˚C
150˚C
–0.01
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
RDS(on)-DraintoSourceOn-stateResistance-mΩ
–1–0.1
300
200
100
0
–10 –100
Pulsed
VGS = –4.0 V
–4.5 V
–10 V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID-DrainCurrent-A
0 –4 –6 –8
–50
–40
–30
–20
–10
0
–2
Pulsed
VGS = –10 V
–10
–4.0 V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
|yfs|-ForwardTransferAdmittance-S
–0.01 –0.1 –1
10
100
–10 –100
0.1
1
Pulsed
VDS = –10 V
TA = 150˚C
75˚C
25˚C
−50˚C
0.01
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - ˚C
VGS(off)-GateCut-offVoltage-V
VDS = –10 V
ID = –1 mA
–1.0
–2.0
–3.0
–50 0 50 100
0
150
–4.0
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5. Data Sheet D14656EJ4V0DS 5
2SJ598
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - ˚C
RDS(on)-DraintoSourceOn-stateResistance-mΩ
−50 0 50 100 150
ID = –6 A
300
250
200
150
100
50
0
–10 V
VGS = –4.0 V
Pulsed
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–1.0
ISD-DiodeForwardCurrent-A
0 –1.5
VSD - Source to Drain Voltage - V
–0.5
Pulsed
–0.01
–0.1
–1
–10
–100
0 V
VGS = –10 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
VGS-GatetoSourceVoltage-V
QG - Gate Charge - nC
VDS-DraintoSourceVoltage-V
0 4 62 8 10 12 14 16
–60
–50
–40
–30
–20
–10
0
VDS
VGS
VDD = –48 V
–30 V
–12 V
ID = –12 A
–12
–10
–8
–6
–4
–2
0
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
IF - Drain Current - A
trr-ReverseRecoveryTime-ns
di/dt = 100 A/ s
VGS = 0 V
1
0.1
10
1 10 100
1000
100
µ
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
Ciss,Coss,Crss-Capacitance-pF
10
100
1000
10000
–0.1 –1 –10
VGS = 0 V
f = 1 MHz
Coss
Crss
Ciss
–100
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on),tr,td(off),tf-SwitchingTime-ns
10
1
–1–0.1
100
1000
–10 –100
tf
tr
td(on)
td(off)
VDD = –30V
RG = 0 Ω
VGS = –10 V
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6. Data Sheet D14656EJ4V0DS6
2SJ598
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting Tch - Starting Channel Temperature - ˚C
EnergyDeratingFactor-%
25 50 75 100
160
140
120
100
80
60
40
20
0
125 150
VDD = –30 V
RG = 25 Ω
VGS = –20 → 0 V
IAS ≤ –12 A
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
IAS-SingleAvalancheCurrent-A
–1
–10
–100
1m 10m
VDD = –30V
RG = 25 Ω
VGS = –20→0 V
IAS = –12A
10µ 100µ
–0.1
EAS =14.4 mJ
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7. Data Sheet D14656EJ4V0DS 7
2SJ598
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3) 2) TO-252 (MP-3Z)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
21 3
6.5 ±0.2
5.0 ±0.2
4
1.5−0.1
+0.2
5.5±0.27.0MIN.
13.7MIN.
2.32.3
0.75
0.5 ±0.1
2.3 ±0.2
1.6±0.2
1.1 ±0.2
0.5 −0.1
+0.2
0.5 −0.1
+0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1 2 3
4
6.5 ±0.2
5.0 ±0.2
4.3MAX.0.8
2.3 2.3
0.9
MAX.
5.5±0.2
10.0MAX.
2.0
MIN.
1.5−0.1
+0.2
2.3 ±0.2
0.5 ±0.1
0.8
MAX.
0.8
1.0MIN.
1.8TYP.
0.7
1.1 ±0.2
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
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8. 2SJ598
The information in this document is current as of August, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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