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KSD-T6O014-002 1
SMK630D
Advanced N-Ch Power MOSFET
DC-DC CONVERTER APPLICATION
HIGH VOLTAGE SWITCHING APPLICATIONS
Features
 High Voltage : BVDSS=200V(Min.)
 Low Crss : Crss=24pF(Typ.)
 Low gate charge : Qg=12nC(Typ.)
 Low RDS(on) : RDS(on)=0.4Ω(Max.)
Ordering Information
Marking Diagram
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic Symbol Rating Unit
Drain-source voltage VDSS 200 V
Gate-source voltage VGSS 30 V
Drain current (DC) *
ID
(Tc=25℃) 9 A
(Tc=100℃) 5.7 A
Drain current (Pulsed) *
IDM 36 A
Power dissipation PD 45 W
Avalanche current (Single) ② IAS 9 A
Single pulsed avalanche energy ② EAS 232 mJ
Avalanche current (Repetitive) ① IAR 9 A
Repetitive avalanche energy ① EAR 9.5 mJ
Junction temperature TJ 150
C
Storage temperature range Tstg -55~150
* Limited by maximum junction temperature
Characteristic Symbol Typ. Max. Unit
Thermal
resistance
Junction-case Rth(J-C) - 2.77
C/W
Junction-ambient **
Rth(J-A) - 50
** When mounted on the minimum pad size recommended (PCB Mount)
Column 1,2 : Device Code
Column 3 : Production Information
e.g.) YWW
-. YWW : Date Code (year, week)
Type No. Marking Package Code
SMK630D SMK630 TO-252
SMK
630
YWW
TO-252
D
G
S
KSD-T6O014-002 2
SMK630D
Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Drain-source breakdown voltage BVDSS ID=250uA, VGS=0 200 - - V
Gate threshold voltage VGS(th) ID=250uA, VDS=VGS 2.0 - 4.0 V
Drain-source cut-off current IDSS VDS=200V, VGS=0V - - 1 uA
Gate leakage current IGSS VDS=0V, VGS=30V - - 100 nA
Drain-source on-resistance ④ RDS(ON) VGS=10V, ID=4.5A - 0.34 0.40 
Forward transfer conductance ④ gfs VDS=10V, ID=4.5A - 5.5 - S
Input capacitance Ciss
VGS=0V, VDS=25V,
f=1MHz
- 420 525
pFOutput capacitance Coss - 99 128
Reverse transfer capacitance Crss - 24 28
Turn-on delay time td(on)
VDD=100V, ID=9A
RG=25Ω
③④
- 11 -
ns
Rise time tr - 92 -
Turn-off delay time td(off) - 70 -
Fall time tf - 72 -
Total gate charge Qg
VDS=160V, VGS=10V
ID=9A
③④
- 12 17
nCGate-source charge Qgs - 2.4 -
Gate-drain charge Qgd - 3.5 -
Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Source current (DC) IS Integral reverse diode
in the MOSFET
- - 9
A
Source current (Pulsed) ① ISM - - 36
Forward voltage ④ VSD VGS=0V, IS=9A - - 1.4 V
Reverse recovery time trr IS=9A, VGS=0V
dIF/dt=100A/us
- 158 - ns
Reverse recovery charge Qrr - 0.97 - uC
Note ;
① Repetitive rating : Pulse width limited by maximum junction temperature
② L=4.3mH, IAS=9A, VDD=50V, RG=25Ω, Starting TJ=25℃
③ Pulse Test : Pulse width≤300us, Duty cycle≤2%
④ Essentially independent of operating temperature
KSD-T6O014-002 3
SMK630D
℃
Fig. 5 Capacitance - VDS
Fig. 1 ID - VDS
Fig. 4 IS - VSDFig. 3 RDS(on) - ID
Fig. 6 VGS - QG
Typical Characteristic Curves
Fig. 2 ID - VGS
KSD-T6O014-002 4
SMK630D
C
*
ㅋ
C
Fig. 8 RDS(on) - TJ
Fig. 9 ID - TC
Fig. 7 VDSS - TJ
Fig. 10 Safe Operating Area
KSD-T6O014-002 5
SMK630D
Fig. 11 Gate Charge Test Circuit & Waveform
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
KSD-T6O014-002 6
SMK630D
Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform
KSD-T6O014-002 7
SMK630D
Recommended Land Pattern [unit: mm]
Outline Dimension unit: mm
4.60
1.50
2.507.00
7.00
KSD-T6O014-002 8
SMK630D
The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.

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  • 1. KSD-T6O014-002 1 SMK630D Advanced N-Ch Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features  High Voltage : BVDSS=200V(Min.)  Low Crss : Crss=24pF(Typ.)  Low gate charge : Qg=12nC(Typ.)  Low RDS(on) : RDS(on)=0.4Ω(Max.) Ordering Information Marking Diagram Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Rating Unit Drain-source voltage VDSS 200 V Gate-source voltage VGSS 30 V Drain current (DC) * ID (Tc=25℃) 9 A (Tc=100℃) 5.7 A Drain current (Pulsed) * IDM 36 A Power dissipation PD 45 W Avalanche current (Single) ② IAS 9 A Single pulsed avalanche energy ② EAS 232 mJ Avalanche current (Repetitive) ① IAR 9 A Repetitive avalanche energy ① EAR 9.5 mJ Junction temperature TJ 150 C Storage temperature range Tstg -55~150 * Limited by maximum junction temperature Characteristic Symbol Typ. Max. Unit Thermal resistance Junction-case Rth(J-C) - 2.77 C/W Junction-ambient ** Rth(J-A) - 50 ** When mounted on the minimum pad size recommended (PCB Mount) Column 1,2 : Device Code Column 3 : Production Information e.g.) YWW -. YWW : Date Code (year, week) Type No. Marking Package Code SMK630D SMK630 TO-252 SMK 630 YWW TO-252 D G S
  • 2. KSD-T6O014-002 2 SMK630D Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS ID=250uA, VGS=0 200 - - V Gate threshold voltage VGS(th) ID=250uA, VDS=VGS 2.0 - 4.0 V Drain-source cut-off current IDSS VDS=200V, VGS=0V - - 1 uA Gate leakage current IGSS VDS=0V, VGS=30V - - 100 nA Drain-source on-resistance ④ RDS(ON) VGS=10V, ID=4.5A - 0.34 0.40  Forward transfer conductance ④ gfs VDS=10V, ID=4.5A - 5.5 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 420 525 pFOutput capacitance Coss - 99 128 Reverse transfer capacitance Crss - 24 28 Turn-on delay time td(on) VDD=100V, ID=9A RG=25Ω ③④ - 11 - ns Rise time tr - 92 - Turn-off delay time td(off) - 70 - Fall time tf - 72 - Total gate charge Qg VDS=160V, VGS=10V ID=9A ③④ - 12 17 nCGate-source charge Qgs - 2.4 - Gate-drain charge Qgd - 3.5 - Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Source current (DC) IS Integral reverse diode in the MOSFET - - 9 A Source current (Pulsed) ① ISM - - 36 Forward voltage ④ VSD VGS=0V, IS=9A - - 1.4 V Reverse recovery time trr IS=9A, VGS=0V dIF/dt=100A/us - 158 - ns Reverse recovery charge Qrr - 0.97 - uC Note ; ① Repetitive rating : Pulse width limited by maximum junction temperature ② L=4.3mH, IAS=9A, VDD=50V, RG=25Ω, Starting TJ=25℃ ③ Pulse Test : Pulse width≤300us, Duty cycle≤2% ④ Essentially independent of operating temperature
  • 3. KSD-T6O014-002 3 SMK630D ℃ Fig. 5 Capacitance - VDS Fig. 1 ID - VDS Fig. 4 IS - VSDFig. 3 RDS(on) - ID Fig. 6 VGS - QG Typical Characteristic Curves Fig. 2 ID - VGS
  • 4. KSD-T6O014-002 4 SMK630D C * ㅋ C Fig. 8 RDS(on) - TJ Fig. 9 ID - TC Fig. 7 VDSS - TJ Fig. 10 Safe Operating Area
  • 5. KSD-T6O014-002 5 SMK630D Fig. 11 Gate Charge Test Circuit & Waveform Fig. 12 Resistive Switching Test Circuit & Waveform Fig. 13 EAS Test Circuit & Waveform
  • 6. KSD-T6O014-002 6 SMK630D Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform
  • 7. KSD-T6O014-002 7 SMK630D Recommended Land Pattern [unit: mm] Outline Dimension unit: mm 4.60 1.50 2.507.00 7.00
  • 8. KSD-T6O014-002 8 SMK630D The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice.