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Device Modeling Report



COMPONENTS: Power MOSFET (Model Parameter)
PART NUMBER: TPCP8302
MANUFACTURER: TOSHIBA
REMARK: P Channel Model
Body Diode (Parameter) / ESD Protection Diode




                 Bee Technologies Inc.




   All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
MOSFET MODEL
 Pspice model
                                          Model description
  parameter
    LEVEL
       L        Channel Length
      W         Channel Width
      KP        Transconductance
      RS        Source Ohmic Resistance
      RD        Ohmic Drain Resistance
     VTO        Zero-bias Threshold Voltage
     RDS        Drain-Source Shunt Resistance
     TOX        Gate Oxide Thickness
    CGSO        Zero-bias Gate-Source Capacitance
    CGDO        Zero-bias Gate-Drain Capacitance
     CBD        Zero-bias Bulk-Drain Junction Capacitance
      MJ        Bulk Junction Grading Coefficient
      PB        Bulk Junction Potential
      FC        Bulk Junction Forward-bias Capacitance Coefficient
      RG        Gate Ohmic Resistance
      IS        Bulk Junction Saturation Current
       N        Bulk Junction Emission Coefficient
      RB        Bulk Series Resistance
     PHI        Surface Inversion Potential
   GAMMA        Body-effect Parameter
    DELTA       Width effect on Threshold Voltage
     ETA        Static Feedback on Threshold Voltage
   THETA        Modility Modulation
   KAPPA        Saturation Field Factor
    VMAX        Maximum Drift Velocity of Carriers
      XJ        Metallurgical Junction Depth
      UO        Surface Mobility




            All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Transconductance Characteristic

Circuit Simulation Result


           15




           10
     gfs




           5




                                                                   Measurement
                                                                   Simulation
           0
                0              0.5                1              1.5               2
                                      - ID - Drain Current - A


Comparison table



                                                gfs
           -Id(A)                                                               Error(%)
                              Measurement              Simulation
                      0.2                 3.333                   3.448                3.450
                      0.5                  6.25                   6.352                1.632
                        1                 8.333                   8.547                2.568
                        2                11.111                  11.628                4.653




                    All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Vgs-Id Characteristic

Circuit Simulation result

   -12A




   -10A




    -8A




    -6A




    -4A




    -2A




     0A
          0V                -0.4V       -0.8V           -1.2V            -1.6V   -2.0V   -2.4V
               I(V3)
                                                            V_V1

Evaluation circuit


                                                V3


                                                     0Vdc




                     U1
               TPCP8302
                                                                    V2


                                                                   -10


                       V1


                     -10




                                    0




                       All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Comparison Graph

Circuit Simulation Result

                                    12
                                                  Measurement
                                                  Simulaion

                                    10



                                    8
         - ID - Drain Current - A




                                    6



                                    4



                                    2



                                    0
                                         0        0.4         0.8       1.2      1.6         2      2.4
                                                        - VGS - Gate to Source Voltage - V


Simulation Result


                                                                    -VGS(V)
      -ID(A)                                                                                        Error (%)
                                               Measurement                    Simulation

                                    0.1                        0.900                     0.863            -4.111
                                    0.5                        1.005                     0.955            -4.975
                                         1                     1.076                     1.023            -4.926
                                         2                     1.180                     1.123            -4.831
                                         5                     1.360                     1.336            -1.765
                                    10                         1.600                     1.590            -0.625
                                    12                         1.690                     1.677            -0.769



                                         All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Rds(on) Characteristic

Circuit Simulation result

   -4.0A




   -3.0A




   -2.0A




   -1.0A




      0A
           0V               -20mV       -40mV             -60mV      -80mV     -100mV
                I(V2)
                                                V_V3

Evaluation circuit

                                           V2


                                                0Vdc




                       U1
                 TPCP8302
                                                          V3
                                                   0Vdc



                      V1

                     -10




                                0




Simulation Result

       ID=-2.5, VGS=-4V               Measurement                 Simulation         Error (%)
                R DS (on)                  25.000 m               25.020 m             0.080



                      All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Gate Charge Characteristic
Circuit Simulation result
       -10V




        -8V




        -6V




        -4V




        -2V




         0V
              0                                          10n                           20n         30n
                  V(W1:4)
                                                                   Time*1mA

Evaluation circuit



                                                   U1
                                              TPCP8302



                                     W
                                          -
                                         +                                               I2
                                                                               D1
                                     W1                                       Dbreak    -5
                                    IOFF = 1mA
                   I1   TD = 0      ION = 0
                        TF = 1n     ROFF = 1e6
                        PW = 600u   RON = 1.0                                            V1
                        PER = 1500u
                        I1 = 0
                        I2 = 1m                                                         -16
                        TR = 1n




                                                               0




Simulation Result

      VDD=-16V,ID=-5A
                                               Measurement                    Simulation      Error (%)
         ,VGS=-5V
           Qgs                                            3.600 nC               3.605 nC          0.139
           Qgd                                            5.100 nC               5.105 nC          0.098
            Qg                                           20.000 nC              19.868 nC         -0.660



                   All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Capacitance Characteristic




                                                            Measurement
                                                            Simulation




Simulation Result


                                      Cbd(pF)
           VDS(V)                                                   Error(%)
                          Measurement          Simulation
                    0.1         310.000               309.000            -0.323
                    0.2         268.000               268.500             0.187
                    0.5         190.000               190.000             0.000
                      1         125.000               126.000             0.800
                      2          72.000                74.000             2.778
                      5          31.000                31.000             0.000
                     10          15.000                15.500             3.333
                     20           9.000                 8.600            -4.444




              All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Switching Time Characteristic

Circuit Simulation result
     -6.0V



     -5.0V



     -4.0V



     -3.0V



     -2.0V



     -1.0V



         0V
         1.96us 1.98us 2.00us 2.02us 2.04us 2.06us 2.08us 2.10us 2.12us
              V(L2:2)   V(L1:1)/2
                                          Time

Evaluation circuit

                                                              L1      R3


                                                              30nH
                                                                      4




                                            U1
                                      TPCP8302



                               R1          L2                              -10   V1


                                          30nH
                               4.7
              V1 = 0      V2
              V2 = -10               R2
              TD = 2u
              TR = 10n               4.7
              TF = 10n
              PW = 10u
              PER = 50u



                                                     0




Simulation Result

       ID=-2.5A, VDD=-10V
                                           Measurement       Simulation               Error(%)
             VGS=-5V
               ton                               20.000 ns   19.999        ns             -0.005



                All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Output Characteristic

Circuit Simulation result

   -20A

                                         -2.5
                                                         -2.2V
                            -10
                                                                                -2.0V
   -16A
                                                              -3
                                            -6           -4
   -12A
                                                                                -1.8V



    -8A
                                                                                -1.6V



    -4A
                                                                                -1.4V


                                                                           VGS= -1.2V
     0A
          0V                  -0.4V      -0.8V                   -1.2V      -1.6V       -2.0V
               I(V3)
                                                       V_V2


Evaluation circuit


                                                 V3


                                                      0Vdc




                       U1
                 TPCP8302
                                                                      V2


                                                                     -2V


                  V1


                  0




                                  0




                       All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
BODY DIODE SPICE MODEL
Forward Current Characteristic

Circuit Simulation Result

          -100A
     3




         -100mA
                  0V         0.2V    0.4V            0.6V   0.8V    1.0V     1.2V
                       -I(R1)
                                                     V_V1


Evaluation Circuit


                                      R1

                                      0.01m




                               V1                   U1
                        0Vdc                  TPCP8302




                                            0




                   All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Comparison Graph

Circuit Simulation Result
                                         100
                                                     Measurement
                                                     Simulation
        - Drain reverse current IDR(A)




                                         10




                                          1




                                         0.1
                                               0    0.2       0.4       0.6      0.8       1        1.2

                                                          - Drain Source voltage VDS(V)
Simulation Result


                                                        -VDS(V)                -VDS(V)
           -IDR(A)                                                                                   %Error
                                                      Measurement             Simulation
                                            0.100             0.510                   0.507               -0.588
                                            0.200             0.540                   0.538               -0.370
                                            0.500             0.583                   0.586                0.515
                                            1.000             0.630                   0.633                0.476
                                            2.000             0.695                   0.694               -0.144
                                            5.000             0.803                   0.798               -0.623
                                           10.000             0.910                   0.912                0.220
                                           20.000             1.090                   1.081               -0.826




                                           All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Reverse Recovery Characteristic

Circuit Simulation Result

       400mA




       200mA




          0A




      -200mA




      -400mA
         19.92us    20.00us        20.08us            20.16us   20.24us 20.32us
              I(RL)
                                               Time

Evaluation Circuit

                                     RL


                                    50




                V1 = -9.58   V1
                V2 = 10.5                      U1
                TD = 20n                 TPCP8302
                TR = 10n
                TF = 10n
                PW = 20u
                PER = 100u




                                           0




Compare Measurement vs. Simulation

                         Measurement                  Simulation          Error (%)
          trr                   85.600 ns                 85.591 ns            -0.001




                All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Reverse Recovery Characteristic                                        Reference




Trj= 24.8(ns)
Trb= 60.8(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50




                                                     Example




                               Relation between trj and trb




              All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result

         10mA




          5mA




           0A
                0V      5V        10V     15V   20V   25V    30V   35V   40V   45V 50V
                     I(R1)
                                                      V_V1

Evaluation Circuit




                                         U1
                                   TPCP8302
                                                                         R2
                                                                         1G
                                  R1


                             V1   0.01m
                      0Vdc




                                                 0




                 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Zener Voltage Characteristic                                         Reference




            All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

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SPICE MODEL of TPCP8302 (Standard+BDS Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: Power MOSFET (Model Parameter) PART NUMBER: TPCP8302 MANUFACTURER: TOSHIBA REMARK: P Channel Model Body Diode (Parameter) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 2. MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 3. Transconductance Characteristic Circuit Simulation Result 15 10 gfs 5 Measurement Simulation 0 0 0.5 1 1.5 2 - ID - Drain Current - A Comparison table gfs -Id(A) Error(%) Measurement Simulation 0.2 3.333 3.448 3.450 0.5 6.25 6.352 1.632 1 8.333 8.547 2.568 2 11.111 11.628 4.653 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 4. Vgs-Id Characteristic Circuit Simulation result -12A -10A -8A -6A -4A -2A 0A 0V -0.4V -0.8V -1.2V -1.6V -2.0V -2.4V I(V3) V_V1 Evaluation circuit V3 0Vdc U1 TPCP8302 V2 -10 V1 -10 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 5. Comparison Graph Circuit Simulation Result 12 Measurement Simulaion 10 8 - ID - Drain Current - A 6 4 2 0 0 0.4 0.8 1.2 1.6 2 2.4 - VGS - Gate to Source Voltage - V Simulation Result -VGS(V) -ID(A) Error (%) Measurement Simulation 0.1 0.900 0.863 -4.111 0.5 1.005 0.955 -4.975 1 1.076 1.023 -4.926 2 1.180 1.123 -4.831 5 1.360 1.336 -1.765 10 1.600 1.590 -0.625 12 1.690 1.677 -0.769 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 6. Rds(on) Characteristic Circuit Simulation result -4.0A -3.0A -2.0A -1.0A 0A 0V -20mV -40mV -60mV -80mV -100mV I(V2) V_V3 Evaluation circuit V2 0Vdc U1 TPCP8302 V3 0Vdc V1 -10 0 Simulation Result ID=-2.5, VGS=-4V Measurement Simulation Error (%) R DS (on) 25.000 m 25.020 m 0.080 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 7. Gate Charge Characteristic Circuit Simulation result -10V -8V -6V -4V -2V 0V 0 10n 20n 30n V(W1:4) Time*1mA Evaluation circuit U1 TPCP8302 W - + I2 D1 W1 Dbreak -5 IOFF = 1mA I1 TD = 0 ION = 0 TF = 1n ROFF = 1e6 PW = 600u RON = 1.0 V1 PER = 1500u I1 = 0 I2 = 1m -16 TR = 1n 0 Simulation Result VDD=-16V,ID=-5A Measurement Simulation Error (%) ,VGS=-5V Qgs 3.600 nC 3.605 nC 0.139 Qgd 5.100 nC 5.105 nC 0.098 Qg 20.000 nC 19.868 nC -0.660 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.1 310.000 309.000 -0.323 0.2 268.000 268.500 0.187 0.5 190.000 190.000 0.000 1 125.000 126.000 0.800 2 72.000 74.000 2.778 5 31.000 31.000 0.000 10 15.000 15.500 3.333 20 9.000 8.600 -4.444 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 9. Switching Time Characteristic Circuit Simulation result -6.0V -5.0V -4.0V -3.0V -2.0V -1.0V 0V 1.96us 1.98us 2.00us 2.02us 2.04us 2.06us 2.08us 2.10us 2.12us V(L2:2) V(L1:1)/2 Time Evaluation circuit L1 R3 30nH 4 U1 TPCP8302 R1 L2 -10 V1 30nH 4.7 V1 = 0 V2 V2 = -10 R2 TD = 2u TR = 10n 4.7 TF = 10n PW = 10u PER = 50u 0 Simulation Result ID=-2.5A, VDD=-10V Measurement Simulation Error(%) VGS=-5V ton 20.000 ns 19.999 ns -0.005 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 10. Output Characteristic Circuit Simulation result -20A -2.5 -2.2V -10 -2.0V -16A -3 -6 -4 -12A -1.8V -8A -1.6V -4A -1.4V VGS= -1.2V 0A 0V -0.4V -0.8V -1.2V -1.6V -2.0V I(V3) V_V2 Evaluation circuit V3 0Vdc U1 TPCP8302 V2 -2V V1 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 11. BODY DIODE SPICE MODEL Forward Current Characteristic Circuit Simulation Result -100A 3 -100mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V -I(R1) V_V1 Evaluation Circuit R1 0.01m V1 U1 0Vdc TPCP8302 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 12. Comparison Graph Circuit Simulation Result 100 Measurement Simulation - Drain reverse current IDR(A) 10 1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 - Drain Source voltage VDS(V) Simulation Result -VDS(V) -VDS(V) -IDR(A) %Error Measurement Simulation 0.100 0.510 0.507 -0.588 0.200 0.540 0.538 -0.370 0.500 0.583 0.586 0.515 1.000 0.630 0.633 0.476 2.000 0.695 0.694 -0.144 5.000 0.803 0.798 -0.623 10.000 0.910 0.912 0.220 20.000 1.090 1.081 -0.826 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 13. Reverse Recovery Characteristic Circuit Simulation Result 400mA 200mA 0A -200mA -400mA 19.92us 20.00us 20.08us 20.16us 20.24us 20.32us I(RL) Time Evaluation Circuit RL 50 V1 = -9.58 V1 V2 = 10.5 U1 TD = 20n TPCP8302 TR = 10n TF = 10n PW = 20u PER = 100u 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trr 85.600 ns 85.591 ns -0.001 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 14. Reverse Recovery Characteristic Reference Trj= 24.8(ns) Trb= 60.8(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 15. ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic Circuit Simulation Result 10mA 5mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit U1 TPCP8302 R2 1G R1 V1 0.01m 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2008