The document discusses annealing and characterization of doped layers created through ion implantation. It covers: 1) Annealing repairs implant damage and makes dopants electrically active by recrystallization at 500-600°C or activation at 600-900°C. It affects conductivity, mobility, and lifetime. 2) Annealing classes include pre-amorphized below 600°C and no pre-amorphization above 800-950°C. 3) Masking during implantation leads to a Gaussian dopant profile below the mask. Thicker masks block more dopants. Characterization involves measuring junction depth through techniques like lapping and staining or interference fringes, and determining the doping distribution using SIM