This document summarizes research on developing a three-dimensional zinc anode for an aqueous Zn/LiFePO4 hybrid battery. The 3D zinc anode is deposited onto carbon fiber paper using electrodeposition over 8 seconds, forming a porous structure that could help prevent dendrite formation and short circuits. Testing of the battery showed it maintained capacity over multiple charge/discharge cycles at various current rates. The document discusses the potential for such an aqueous battery to safely integrate renewable energy sources into electrical grids through energy storage.
I. Electronic properties of nanomaterials.
Physics of inorganic nanostructures: Band structure engineering, quantum confinement, quantum wells/wires/dots, electronic states, energy levels and density of states, selected experimental results on characterization (STS, WF mapping, optical spectroscopy) and applications (lasers, single photon sources, single electron transistors).
Physics of organic nanosystems: Carbon nanostructures (nanotubes, fullerenes and graphene: band structure, Dirac Points, electronic properties, Raman spectra, electronic transport, Klein tunneling and applications), charge transport in conductive polymers and organic semiconductors.
Fabrication and characterization of printed zinc batteriesjournalBEEI
Zinc batteries are a more sustainable alternative to lithium-ion batteries due to its components being highly recyclable. With the improvements in the screen printing technology, high quality devices can be printed with at high throughput and precision at a lower cost compared to those manufactured using lithographic techniques. In this paper we describe the fabrication and characterization of printed zinc batteries. Different binder materials such as polyvinyl pyrrolidone (PVP) and polyvinyl butyral (PVB), were used to fabricate the electrodes. The electrodes were first evaluated using three-electrode cyclic voltammetry, x-ray diffraction (XRD), and scanning electron microscopy before being fully assembled and tested using charge-discharge test and two-electrode cyclic voltammetry. The results show that the printed ZnO electrode with PVB as binder performed better than PVP-based ZnO. The XRD data prove that the electro-active materials were successfully transferred to the sample. However, based on the evaluation, the results show that the cathode electrode was dominated by the silver instead of Ni(OH)2, which leads the sample to behave like a silver-zinc battery instead of a nickel-zinc battery. Nevertheless, the printed zinc battery electrodes were successfully evaluated, and more current collector materials for cathode should be explored for printed nickel-zinc batteries.
I. Electronic properties of nanomaterials.
Physics of inorganic nanostructures: Band structure engineering, quantum confinement, quantum wells/wires/dots, electronic states, energy levels and density of states, selected experimental results on characterization (STS, WF mapping, optical spectroscopy) and applications (lasers, single photon sources, single electron transistors).
Physics of organic nanosystems: Carbon nanostructures (nanotubes, fullerenes and graphene: band structure, Dirac Points, electronic properties, Raman spectra, electronic transport, Klein tunneling and applications), charge transport in conductive polymers and organic semiconductors.
Fabrication and characterization of printed zinc batteriesjournalBEEI
Zinc batteries are a more sustainable alternative to lithium-ion batteries due to its components being highly recyclable. With the improvements in the screen printing technology, high quality devices can be printed with at high throughput and precision at a lower cost compared to those manufactured using lithographic techniques. In this paper we describe the fabrication and characterization of printed zinc batteries. Different binder materials such as polyvinyl pyrrolidone (PVP) and polyvinyl butyral (PVB), were used to fabricate the electrodes. The electrodes were first evaluated using three-electrode cyclic voltammetry, x-ray diffraction (XRD), and scanning electron microscopy before being fully assembled and tested using charge-discharge test and two-electrode cyclic voltammetry. The results show that the printed ZnO electrode with PVB as binder performed better than PVP-based ZnO. The XRD data prove that the electro-active materials were successfully transferred to the sample. However, based on the evaluation, the results show that the cathode electrode was dominated by the silver instead of Ni(OH)2, which leads the sample to behave like a silver-zinc battery instead of a nickel-zinc battery. Nevertheless, the printed zinc battery electrodes were successfully evaluated, and more current collector materials for cathode should be explored for printed nickel-zinc batteries.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Center for Superconducting and Magnetic Materials (CSMM), Research and Facili...The Ohio State University
Summary of the present (5/09) state of the research and facilities in the Center for Superconducting and Magnetic Materials (CSMM). Department of Materials Science and Engineering, The Ohio State University
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
DESIGN OF DIFFERENT DIGITAL CIRCUITS USING SINGLE ELECTRON DEVICESmsejjournal
Single Electron transistor (SET) is foreseen as an excellently growing technology. The aim of this paper is
to present in short the fundamentals of SET as well as to realize its application in the design of single
electron device based novel digital logic circuits with the help of a Monte Carlo based simulator. A Single
Electron Transistors (SET) is characterized by two most substantial determinants. One is very low power
dissipation while the other is its small stature that makes it a favorable suitor for the future generation of
very high level integration. With the utilization of SET, technology is moving past CMOS age resulting in
power efficient, high integrity, handy and high speed devices. Conducting a check on the transport of single
electrons is one of the most stirring aspects of SET technologies. Apparently, Monte Carlo technique is in
vogue in terms of simulating SED based circuits. Hence, a MC based tool called SIMON 2.0 is exercised
upon for the design and simulation of these digital logic circuits. Further, an efficient functioning of the
logic circuits such as multiplexers, decoders, adders and converters are illustrated and established by
means of circuit simulation using SIMON 2.0 simulator.
DESIGN OF DIFFERENT DIGITAL CIRCUITS USING SINGLE ELECTRON DEVICESmsejjournal
Single Electron transistor (SET) is foreseen as an excellently growing technology. The aim of this paper is
to present in short the fundamentals of SET as well as to realize its application in the design of single
electron device based novel digital logic circuits with the help of a Monte Carlo based simulator. A Single
Electron Transistors (SET) is characterized by two most substantial determinants. One is very low power
dissipation while the other is its small stature that makes it a favorable suitor for the future generation of
very high level integration. With the utilization of SET, technology is moving past CMOS age resulting in
power efficient, high integrity, handy and high speed devices. Conducting a check on the transport of single
electrons is one of the most stirring aspects of SET technologies. Apparently, Monte Carlo technique is in
vogue in terms of simulating SED based circuits. Hence, a MC based tool called SIMON 2.0 is exercised
upon for the design and simulation of these digital logic circuits. Further, an efficient functioning of the
logic circuits such as multiplexers, decoders, adders and converters are illustrated and established by
means of circuit simulation using SIMON 2.0 simulator.
Simulation study of single event effects sensitivity on commercial power MOSF...journalBEEI
High-frequency semiconductor devices are key components for advanced power electronic system that require fast switching speed. Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is the most famous electronic device that are used in much power electronic system. However, the application such as space borne, military and communication system needs Power MOSFET to withstand in radiation environments. This is very challenging for the engineer to develop a device that continuously operated without changing its electrical behavior due to radiation. Therefore, the main objective of this study is to investigate the Single Event Effect (SEE) sensitivity by using Heavy Ion Radiation on the commercial Power MOSFET. A simulation study using Sentaurus Synopsys TCAD software for process simulation and device simulation was done. The simulation results reveal that single heavy ion radiation has affected the device structure and fluctuate the I-V characteristic of commercial Power MOSFET.
Impact of gamma-ray irradiation on dynamic characteristics of Si and SiC powe...IJECEIAES
Power electronic devices in spacecraft and military applications requires high radiation tolerant. The semiconductor devices face the issue of device degradation due to their sensitivity to radiation. Power MOSFET is one of the primary components of these power electronic devices because of its capabilities of fast switching speed and low power consumption. These abilities are challenged by ionizing radiation which damages the devices by inducing charge built-up in the sensitive oxide layer of power MOSFET. Radiations degrade the oxides in a power MOSFET through Total Ionization Dose effect mechanism that creates defects by generation of excessive electron–hole pairs causing electrical characteristics shifts. This study investigates the impact of gamma ray irradiation on dynamic characteristics of silicon and silicon carbide power MOSFET. The switching speed is limit at the higher doses due to the increase capacitance in power MOSFETs. Thus, the power circuit may operate improper due to the switching speed has changed by increasing or decreasing capacitances in power MOSFETs. These defects are obtained due to the penetration of Cobalt60 gamma ray dose level from 50krad to 600krad. The irradiated devices were evaluated through its shifts in the capacitance-voltage characteristics, results were analyzed and plotted for the both silicon and silicon carbide power MOSFET.
DC performance analysis of a 20nm gate length n-type Silicon GAA junctionless...IJECEIAES
With integrated circuit scales in the 22-nm regime, conventional planar MOSFETs have approached the limit of their potential performance. To overcome short channel effects 'SCEs' that appears for deeply scaled MOSFETs beyond 10nm technology node many new device structures and channel materials have been proposed. Among these devices such as Gate-all-around FET. Recentely, junctionless GAA MOSFETs JL-GAA MOSFETs have attracted much attention since the junctionless MOSFET has been presented. In this paper, DC characteristics of an n-type JL-GAA MOSFET are presented using a 3-D quantum transport model. This new generation device is conceived with the same doping concentration level in its channel source/drain allowing to reduce fabrication complexity. The performance of our 3D JL-GAA structure with a 20nm gate length and a rectangular cross section have been obtained using SILVACO TCAD tools allowing also to study short channel effects. Our device reveals a favorable on/off current ratio and better SCE characteristics compared to an inversionmode GAA transistor. Our device reveals a threshold voltage of 0.55 V, a sub-threshold slope of 63mV / decade which approaches the ideal value, an Ion/Ioff ratio of 10e + 10 value and a drain induced barrier lowring (DIBL) value of 98mV/V.
Silicon carbide schottky diodes forward and reverse current properties upon f...journalBEEI
This paper investigates on the reaction of 10 and 15MGy, 3MeV electron irradiation upon off-the-shelves (commercial) Silicon Carbide Schottky diodes from Infineon Technologies (model: IDH08SG60C) and STMicroelectronics (model: STPSC806). Such irradiation reduces the forward-bias current. The reduction is mainly due to the significant increase of the series resistance (i.e. Infineon: 1.45Ω at before irradiation → 121×103 Ω at 15MGy); STMicroelectronics: 1.44Ω at before irradiation → 2.1×109 Ω at 15MGy). This increase in series resistance gives 4.6 and 8.2 orders of magnitude reduction for the forward-bias current density of Infineon and STMicroelectronics respectively. It is also observed that the ideality factor and the saturation current of the diodes increases with increasing dose (i.e. ideality factor- Infineon: 1.01 at before irradiation → 1.05 at 15MGy; STMicroelectronics: 1.02 at before irradiation → 1.3 at 15MGy | saturation current- Infineon: 1.6×10-17A at before irradiation → 2.5×10-17A at 15MGy; STMicroelectronics: 2.4×10-15A at before irradiation → 8×10-15A at 15MGy). Reverse-bias leakage current density in model by Infineon increases by one order of magnitude after 15MGy irradiation, however, in model by STMicroelectronics decreases by one order of magnitude. Overall, for these particular samples studied, Infineon devices have shown to be better in quality and more radiation resistance toward electron irradiation in forward-bias operation while STMicroelectronics exhibit better characteristics in reverse-bias operation.
Saudi Arabia stands as a titan in the global energy landscape, renowned for its abundant oil and gas resources. It's the largest exporter of petroleum and holds some of the world's most significant reserves. Let's delve into the top 10 oil and gas projects shaping Saudi Arabia's energy future in 2024.
Final project report on grocery store management system..pdfKamal Acharya
In today’s fast-changing business environment, it’s extremely important to be able to respond to client needs in the most effective and timely manner. If your customers wish to see your business online and have instant access to your products or services.
Online Grocery Store is an e-commerce website, which retails various grocery products. This project allows viewing various products available enables registered users to purchase desired products instantly using Paytm, UPI payment processor (Instant Pay) and also can place order by using Cash on Delivery (Pay Later) option. This project provides an easy access to Administrators and Managers to view orders placed using Pay Later and Instant Pay options.
In order to develop an e-commerce website, a number of Technologies must be studied and understood. These include multi-tiered architecture, server and client-side scripting techniques, implementation technologies, programming language (such as PHP, HTML, CSS, JavaScript) and MySQL relational databases. This is a project with the objective to develop a basic website where a consumer is provided with a shopping cart website and also to know about the technologies used to develop such a website.
This document will discuss each of the underlying technologies to create and implement an e- commerce website.
Water scarcity is the lack of fresh water resources to meet the standard water demand. There are two type of water scarcity. One is physical. The other is economic water scarcity.
Hierarchical Digital Twin of a Naval Power SystemKerry Sado
A hierarchical digital twin of a Naval DC power system has been developed and experimentally verified. Similar to other state-of-the-art digital twins, this technology creates a digital replica of the physical system executed in real-time or faster, which can modify hardware controls. However, its advantage stems from distributing computational efforts by utilizing a hierarchical structure composed of lower-level digital twin blocks and a higher-level system digital twin. Each digital twin block is associated with a physical subsystem of the hardware and communicates with a singular system digital twin, which creates a system-level response. By extracting information from each level of the hierarchy, power system controls of the hardware were reconfigured autonomously. This hierarchical digital twin development offers several advantages over other digital twins, particularly in the field of naval power systems. The hierarchical structure allows for greater computational efficiency and scalability while the ability to autonomously reconfigure hardware controls offers increased flexibility and responsiveness. The hierarchical decomposition and models utilized were well aligned with the physical twin, as indicated by the maximum deviations between the developed digital twin hierarchy and the hardware.
About
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Technical Specifications
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
Key Features
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface
• Compatible with MAFI CCR system
• Copatiable with IDM8000 CCR
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
Application
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Welcome to WIPAC Monthly the magazine brought to you by the LinkedIn Group Water Industry Process Automation & Control.
In this month's edition, along with this month's industry news to celebrate the 13 years since the group was created we have articles including
A case study of the used of Advanced Process Control at the Wastewater Treatment works at Lleida in Spain
A look back on an article on smart wastewater networks in order to see how the industry has measured up in the interim around the adoption of Digital Transformation in the Water Industry.
Student information management system project report ii.pdfKamal Acharya
Our project explains about the student management. This project mainly explains the various actions related to student details. This project shows some ease in adding, editing and deleting the student details. It also provides a less time consuming process for viewing, adding, editing and deleting the marks of the students.
3. Introduction
Renewable energy integration into electrical
grids is crucial for energy security, leading to
the highly secured communication network,
traffic control, industrial activities, etc.
Renewable energies are intermittent and
cannot be easily directly integrated to electric
grids without using batteries.
These batteries must be safe and inexpensive
from the viewpoint of life-cycle cost.
Aqueous batteries are non-flammable that can
be a great merit compared with traditional
lithium-ion batteries that use flammable
organic electrolyte solutions.
4. Lead-acid battery:
toxic, life-cycle cost is not low
NiMH battery:
Gigacell costs $2500 kWh-1 25 years-1
There are some new technologies that are
currently under the field test.
Conventional aqueous battery
Pb, PbO2, H2SO4
5. Zn/LiFePO4 system is a promising candidate.
- No toxic materials.
- Zn anode that delivers a higher gravimetric capacity (Zn, 818
mAh g-1) than metal hydride (e.g., LaNi3.55Co0.75Mn0.4Al0.3, 300
mAh/g or less) and a comparable potential (-0.76 V vs. Standard
Hydrogen Electrode, SHE) in aqueous media with metal hydride
(e.g., LaNi3.55Co0.75Mn0.4Al0.3, -0.75 to -0.85 V vs. SHE).
- Comparable cost with lead-acid battery when using Zn foil.
Previous Work
[N. Yesibolati, N. Umirov, A. Koishybay, M. Omarova, I. Kurmanbayeva, Y. Zhang, Y.
Zhao, Z. Bakenov, Electrochimica Acta 152 (2015) 505-511.]
0 20 40 60 80 100 120 140
1.0
1.1
1.2
1.3
1.4
0.6C1.2C6C 3C12C30C
Voltage(V)
Specific Capacity(mAhg-1
)
60C
0 50 100 150 200 250 300 350 400
0
20
40
60
80
100
120
140
160
180
Coulombicefficiency/%
Cycle number
Charge Capacity
Discharge Capacity
Coloumbic Efficiency
Specificcapacity/mAhg-1
6 C Charge/Discharge
0
20
40
60
80
100
120
b)
6. The problem is zinc dendrite formation resulting in internal short
circuit failure and how to balance anode/cathode capacities.
Challenging issue
(i) Facilitating long-range electronic conductivity through the
inner core of zinc electrode,
(ii) Amplification of electrified interfaces to distribute current
uniformly throughout the electrode structure,
(iii) Forming partially confined void volume elements within the
interior of the porous zinc anode that expedite
dissolution/deposition.
In short, POROUS, MONOLITHIC, THREE-DIMENSIONAL,
and APERIODIC ARCHITECTURE.
Counter measure
[J. F. Parker, C. N. Chervin, E. S. Nelson, D. R. Rolison, J. W. Long, Energy Environ.
Sci. 7 (2014) 1117-1124; J. F. Parker, E. S. Nelson, M. D. Wattendorf, C. N. Chervin, J.
W. Long, D. R. Rolison, ACS Appl. Mater. Interfaces 6 (2014) 19471–19476.]
8. Present work
Onto the current collector, carbon fiber paper (CFP), zinc was
cathodically electroplated.
CFP Zn @ CFP
15 30 45 60 75 90
2-theta/dag
C(004)
C(002)
Zn(100)
Zn(103)
Zn(101)
Zn(002)
Zn(102)
Zn(112)
cfp
Zn/cfp
CFP
Zn@CFP
2 theta / degrees
9. Present work
Constant current density of 500 mA cm-2.
Deposition time of 8 sec.
Zn 3.4 mg cm-2, 2.8 mAh cm-2
Electrolyte solution:
0.52 mol L-1 ZnSO4·7H2O,
0.15 mol L-1 (NH4)2SO4,
0.7 g L-1 polyacrylamide (PAA, MW=200,000),
0.05 g L-1 thiourea,
40 g L-1 H3BO3 (pH = 4)
2/98 vol.% ethanol/water with 0.1 g L-1 sodium dodecyl sulfate
(SDS) (ethanol and SDS were added as wetting agents).
0.13-mm-thick graphite backing-plate is attached to a CFP
beforehand by using carbon paint adhesive [PELCO® high
temperature carbon paste (silicate)].
10. [TGP-H-060 (190-μm-thick) or TGP-H-120
(370-μm-thick), Toray Industry Inc.]
Carbon fiber felt (cheap)
Future plan
Cost reduction