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Presentation
By
Biswajit Kumar Barman
Harnessing Triplet Excitons for Organic Light Emitting
Devices by Thermally Activated Delayed Fluorescence
Harnessing Triplet Excitons for Organic Light Emitting
Devices by Thermally Activated Delayed Fluorescence
1
ContentContent
❑ Introduction-Thermally Activated Delayed Fluorescence (TADF)
❑ Detailed Mechanism and Factors affecting TADF
❑ Molecular Design strategy and introduction to present work
2
✓ Radiative process is from singlet state
✓ Thermally activated from triplet state
✓ Life time higher than prompt one ,so delayed
✓ Triplet state to Singlet state and Singlet to ground state radiative transition
✓ Energetics and structural feature to enhance the TADF process
Organic Light Emitting Diode - comprises of
doped/ non-doped organic electroluminescent
material as the active layer with appropriate
transport layer and injection contacts.
Organic Light Emitting Diode (OLED)Organic Light Emitting Diode (OLED)
3
Advantages of OLEDs
➢ Flexible lighting
➢ Large panel displays
➢ Low Power consumption
Disadvantages of OLED
➢ Low stability
Fluorescent OLEDFluorescent OLED
Conversion of triplet excitons into
light is necessary.
Two popular ways
4
Electron from cathode Hole from anode
Exciton in Light emitting layer
Recombination
25% singlet exciton 75% triplet exciton
Spin –Statistics rule
Phosphorescence channel - IQE =100%
TADF channel - IQE =100%
Maximum theoretical IQE=25%
Effect of heavy metal atom
Phosphorescent emitters have high cost, toxic and triplet-polaron annihilation,
triplet-triplet annihilation effect that decreases device efficiency.
Problems
Phosphorescence channelPhosphorescence channel
Iridium, Platinum
⇒High atomic number
⇒Large spin–orbit coupling constant
S1
T1
S0
ISC
Phosphorescence
λ = spin orbit coupling constant
Z = atomic number
l = orbital angular momentum
n = principle quantum number
In phosphorescent emitter,
Triplet excitons go to ground state
radiatively.Lifetime of this process is
around ms to s .
5
S1
S0
T1
Reverse Inter System Crossing (RISC)
Fluorescence Delayed fluorescence(TADF)
Electrical
excitation
Electrical
excitation
25%
75%
TADF channelTADF channel
In TADF, reverse intersystem crossing (RISC) from the lowest triplet state (T1) to the
lowest excited singlet state (S1), and followed by radiative decay from S1 to the
ground state (S0).
6
S1 S1
S1
T1
T1
T1
S0 S0 S0
Radiative
phosphorescence
TADF
ISC ISC
RISC
Radiative
Nonradiative
Radiative
Fluorescence
1-st: Fluorescent emitter 2-nd: Phosphorescent emitter 3-rd:TADF emitter
Three generations of OLEDThree generations of OLED
Electrical
excitation
Electrical
excitation
Electrical
excitation
Electrical
excitation
Electrical
excitation
Electrical
excitation
7
Mechanism of TADF processMechanism of TADF process
Electroluminescence process
Electrical
excitation
Electrical
excitation
S1
S0
T1
8Ref: Chem. Mater. 2017, 29, 1946−1963
Thermal energy = 25.9 meV at 298K.
Key Parameters of TADF Emitters
Small Singlet−Triplet Energy Gap
High PL Quantum Yield
High Oscillator strength from S1 to S0 electronic state
9
If energy gap is low,then rate of reverse inter system crossing is high
If the oscillator strength is high,then radiative rate of transition is quite high
PLQY =
Quantum efficiency increasing with increase PLQY .
Design principleDesign principle
Strong donor/acceptor
Phenyl linker
HOMO dispersion
Dual emitting core
Frozen donor/acceptor
Rigid acceptor
High BDE
10Ref: Chem. Mater. 2017, 29, 1946−1963
Distortion between Donors and Acceptors
Small energy gapSmall energy gap
High PLQYHigh PLQY
Narrow emissionNarrow emission
Stable structureStable structure
Small Singlet−Triplet Energy Gap(ΔEST)
1
Minimal overlap between the HOMO and LUMO
Minimum overlap
Low exchange energy
That reduce energy gap between S1 and T1
E= orbital energy
K=electron repulsion energy
J =electron exchange
energy
S1 state have energy
ES=E+K+J
T1 state have energy
ET=E+K –J
ΔEST=ES – ET
ΔEST= 2J
Ref: Chem. Soc. Rev., 2017,46,915-1016 & Adv. Mater. 2014, 26, 7931–7958
1. Separation of HOMO - LUMO , (small ΔEST)
(a) Introduction of steric hindrance
(b) Spiro linker, physical separation of donor and acceptor units
(c) X shaped molecular structure
HOMO-LUMO SeparationHOMO-LUMO Separation
Ref : Chem. Soc. Rev., 2017,46,915-1016
Methods: Donor- Acceptor backbone
1
oBFCzTrz mBFCzTrz pBFCzTrz
Compound Energy of S1(eV) Energy of T1(eV) ΔEST(eV) Life time(τ),μs
oBFCzTrz 2.78 2.73 0.05 5.4
mBFCzTrz 2.79 2.68 0.11 29.6
pBFCzTrz 2.89 2.64 0.25 31.2
Short LifetimeShort Lifetime
Ref: Appl. Mater. Interfaces, 2016, 8, 23190−23196
The increased CT character due to geometrical distortion
Short conjugation length of oBFCzTrz, that increase T1 value
13
PLQY: HOMO dispersionPLQY: HOMO dispersion
Compound (in 94% DPEPO film) PLQY EQE
Compound 1 100 22.4
Compound 2 95 18.5
Compound 3 93 15.6
Compound 1 Compound 2 Compound 3
Ref: Nat. Mater. 2015, 14, 330−336
Increase HOMO-LUMO overlap
14
DDCzIPNDCZIPN
PLQY: Dual emitting corePLQY: Dual emitting core
Absorption coefficient = 1.1 X 105
M-1
cm-1
PLQY = 67%
EQE = 16.4%
Absorption coefficient = 3.7 X 105
M-1
cm-1
PLQY = 91%
EQE = 18.9%
The UV/Vis absorption of DDCzIPN was stronger than that of DCzIPN 
Ref: Angew. Chem. Int. Ed. 2015, 54, 5201–5204 15
Narrow EmissionNarrow Emission
To freeze the donor−acceptor
based core structure by fused
structure or sterically hindered
structure. To adopt a rigid
acceptor structure to minimize
vibrational motion of the TADF
emitters
DABNA 1
FWHM=33nm
DABNA 2
FWHM=34nm
Large steric hindrance
Ref: Adv. Mater. 2016, 28, 2777–2781
Rigid π-conjugated
framework
CNBPCz
FWHM=76nm
CzBPCN
FWHM=48nm
16
Role of steric hindranceRole of steric hindrance
1. Dihedral angle = 470
2. ΔEST = 0.10 eV
3. EQE = 14.4%
1. Dihedral angle = 600
2. ΔEST = 0.03 eV
3. EQE = 20.1%
Ref: J. Mater. Chem. C, 2017, 5, 4797--4803 17
DCz-TRCz-TR
Role of Donor partRole of Donor part
Ref: Org. Electron, 50 (2017) ,70-76 18
1 (TADF inactive) 2 (TADF active)
1. S1 = 3.809 eV
2. T1 = 3.108 eV
3. ΔEST = 0.701 eV
1. S1 = 3.526 eV
2. T1 = 3.100 eV
3. ΔEST = 0.426 eV
HIL
HTL
EBL
Anode
EML
HBL
ETL
EIL
Cathode
Device structureDevice structure
ITO = 4.6 eV
Al = 4.28 eV
PEDOT:PSS
5.2 ,2.4
Ref: J. Mater. Chem. C, 2013, 1, 1739–1744 19
PPV= hole transporting materials
CN-PPV= electron transporting materials
Where,
HIL = hole injection layer
HTL = hole transport layer
EBL = electron blocking layer
EML= emissive layer
HBL = hole blocking layer
ETL = electron transport layer
EIL = electron injection layer
Electroluminescence propertyElectroluminescence property
Device HOMO(eV) LUMO(eV) Turn on voltage (V) EQE (%)
1 5.2 2.6 8.1 5.6
2 5.0 2.6 6.7 8.3
Host= mCP (5.9,2.4)
1
2
Device 1 Device 2
Turn on voltage –
1. Mobility of charges/carrier
2. Hole injection barrier
Fig: Current density vs. Voltage plot
Ref: Dyes and Pigments, 2017,141, 83-92 20
Electroluminescence propertyElectroluminescence property
Triplet –triplet anihilation,Triplet –polaron annihilation process at high current density
Fig: EQE vs. Current density plot
Ref: Adv. Mater. 2014, 26, 7931–7958 21
Photophysical characteristicsPhotophysical characteristics
Fig: Photoluminescence quantum yield vs.
Emitter concentration plot
Fig: (a) Molecular structures of the emitters.
Ref: Chem. Commun., 2015, 51, 9443—9446
➢ Bridging sp3
carbon
➢ Concentration quenching in emitter 4, due to planer structure
22
Ref: Chem. Commun., 2015, 51, 9443—9446
Photophysical characteristicsPhotophysical characteristics
Fig: Normalized intensity vs. Wavelength plot
Conclusion = Delayed transition from S1 to S0 state like prompt flurescence one
23
ConclusionConclusion
24
❖ To harvest triplet excitons for light emission.
❖ Preparation of TADF molecules with a high efficiency.
Thank YouThank You
25

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Thermally Activated Delayed Fluorescence (TADF)

  • 1. Presentation By Biswajit Kumar Barman Harnessing Triplet Excitons for Organic Light Emitting Devices by Thermally Activated Delayed Fluorescence Harnessing Triplet Excitons for Organic Light Emitting Devices by Thermally Activated Delayed Fluorescence 1
  • 2. ContentContent ❑ Introduction-Thermally Activated Delayed Fluorescence (TADF) ❑ Detailed Mechanism and Factors affecting TADF ❑ Molecular Design strategy and introduction to present work 2 ✓ Radiative process is from singlet state ✓ Thermally activated from triplet state ✓ Life time higher than prompt one ,so delayed ✓ Triplet state to Singlet state and Singlet to ground state radiative transition ✓ Energetics and structural feature to enhance the TADF process
  • 3. Organic Light Emitting Diode - comprises of doped/ non-doped organic electroluminescent material as the active layer with appropriate transport layer and injection contacts. Organic Light Emitting Diode (OLED)Organic Light Emitting Diode (OLED) 3 Advantages of OLEDs ➢ Flexible lighting ➢ Large panel displays ➢ Low Power consumption Disadvantages of OLED ➢ Low stability
  • 4. Fluorescent OLEDFluorescent OLED Conversion of triplet excitons into light is necessary. Two popular ways 4 Electron from cathode Hole from anode Exciton in Light emitting layer Recombination 25% singlet exciton 75% triplet exciton Spin –Statistics rule Phosphorescence channel - IQE =100% TADF channel - IQE =100% Maximum theoretical IQE=25%
  • 5. Effect of heavy metal atom Phosphorescent emitters have high cost, toxic and triplet-polaron annihilation, triplet-triplet annihilation effect that decreases device efficiency. Problems Phosphorescence channelPhosphorescence channel Iridium, Platinum ⇒High atomic number ⇒Large spin–orbit coupling constant S1 T1 S0 ISC Phosphorescence λ = spin orbit coupling constant Z = atomic number l = orbital angular momentum n = principle quantum number In phosphorescent emitter, Triplet excitons go to ground state radiatively.Lifetime of this process is around ms to s . 5
  • 6. S1 S0 T1 Reverse Inter System Crossing (RISC) Fluorescence Delayed fluorescence(TADF) Electrical excitation Electrical excitation 25% 75% TADF channelTADF channel In TADF, reverse intersystem crossing (RISC) from the lowest triplet state (T1) to the lowest excited singlet state (S1), and followed by radiative decay from S1 to the ground state (S0). 6
  • 7. S1 S1 S1 T1 T1 T1 S0 S0 S0 Radiative phosphorescence TADF ISC ISC RISC Radiative Nonradiative Radiative Fluorescence 1-st: Fluorescent emitter 2-nd: Phosphorescent emitter 3-rd:TADF emitter Three generations of OLEDThree generations of OLED Electrical excitation Electrical excitation Electrical excitation Electrical excitation Electrical excitation Electrical excitation 7
  • 8. Mechanism of TADF processMechanism of TADF process Electroluminescence process Electrical excitation Electrical excitation S1 S0 T1 8Ref: Chem. Mater. 2017, 29, 1946−1963 Thermal energy = 25.9 meV at 298K.
  • 9. Key Parameters of TADF Emitters Small Singlet−Triplet Energy Gap High PL Quantum Yield High Oscillator strength from S1 to S0 electronic state 9 If energy gap is low,then rate of reverse inter system crossing is high If the oscillator strength is high,then radiative rate of transition is quite high PLQY = Quantum efficiency increasing with increase PLQY .
  • 10. Design principleDesign principle Strong donor/acceptor Phenyl linker HOMO dispersion Dual emitting core Frozen donor/acceptor Rigid acceptor High BDE 10Ref: Chem. Mater. 2017, 29, 1946−1963 Distortion between Donors and Acceptors Small energy gapSmall energy gap High PLQYHigh PLQY Narrow emissionNarrow emission Stable structureStable structure
  • 11. Small Singlet−Triplet Energy Gap(ΔEST) 1 Minimal overlap between the HOMO and LUMO Minimum overlap Low exchange energy That reduce energy gap between S1 and T1 E= orbital energy K=electron repulsion energy J =electron exchange energy S1 state have energy ES=E+K+J T1 state have energy ET=E+K –J ΔEST=ES – ET ΔEST= 2J Ref: Chem. Soc. Rev., 2017,46,915-1016 & Adv. Mater. 2014, 26, 7931–7958
  • 12. 1. Separation of HOMO - LUMO , (small ΔEST) (a) Introduction of steric hindrance (b) Spiro linker, physical separation of donor and acceptor units (c) X shaped molecular structure HOMO-LUMO SeparationHOMO-LUMO Separation Ref : Chem. Soc. Rev., 2017,46,915-1016 Methods: Donor- Acceptor backbone 1
  • 13. oBFCzTrz mBFCzTrz pBFCzTrz Compound Energy of S1(eV) Energy of T1(eV) ΔEST(eV) Life time(τ),μs oBFCzTrz 2.78 2.73 0.05 5.4 mBFCzTrz 2.79 2.68 0.11 29.6 pBFCzTrz 2.89 2.64 0.25 31.2 Short LifetimeShort Lifetime Ref: Appl. Mater. Interfaces, 2016, 8, 23190−23196 The increased CT character due to geometrical distortion Short conjugation length of oBFCzTrz, that increase T1 value 13
  • 14. PLQY: HOMO dispersionPLQY: HOMO dispersion Compound (in 94% DPEPO film) PLQY EQE Compound 1 100 22.4 Compound 2 95 18.5 Compound 3 93 15.6 Compound 1 Compound 2 Compound 3 Ref: Nat. Mater. 2015, 14, 330−336 Increase HOMO-LUMO overlap 14
  • 15. DDCzIPNDCZIPN PLQY: Dual emitting corePLQY: Dual emitting core Absorption coefficient = 1.1 X 105 M-1 cm-1 PLQY = 67% EQE = 16.4% Absorption coefficient = 3.7 X 105 M-1 cm-1 PLQY = 91% EQE = 18.9% The UV/Vis absorption of DDCzIPN was stronger than that of DCzIPN  Ref: Angew. Chem. Int. Ed. 2015, 54, 5201–5204 15
  • 16. Narrow EmissionNarrow Emission To freeze the donor−acceptor based core structure by fused structure or sterically hindered structure. To adopt a rigid acceptor structure to minimize vibrational motion of the TADF emitters DABNA 1 FWHM=33nm DABNA 2 FWHM=34nm Large steric hindrance Ref: Adv. Mater. 2016, 28, 2777–2781 Rigid π-conjugated framework CNBPCz FWHM=76nm CzBPCN FWHM=48nm 16
  • 17. Role of steric hindranceRole of steric hindrance 1. Dihedral angle = 470 2. ΔEST = 0.10 eV 3. EQE = 14.4% 1. Dihedral angle = 600 2. ΔEST = 0.03 eV 3. EQE = 20.1% Ref: J. Mater. Chem. C, 2017, 5, 4797--4803 17 DCz-TRCz-TR
  • 18. Role of Donor partRole of Donor part Ref: Org. Electron, 50 (2017) ,70-76 18 1 (TADF inactive) 2 (TADF active) 1. S1 = 3.809 eV 2. T1 = 3.108 eV 3. ΔEST = 0.701 eV 1. S1 = 3.526 eV 2. T1 = 3.100 eV 3. ΔEST = 0.426 eV
  • 19. HIL HTL EBL Anode EML HBL ETL EIL Cathode Device structureDevice structure ITO = 4.6 eV Al = 4.28 eV PEDOT:PSS 5.2 ,2.4 Ref: J. Mater. Chem. C, 2013, 1, 1739–1744 19 PPV= hole transporting materials CN-PPV= electron transporting materials Where, HIL = hole injection layer HTL = hole transport layer EBL = electron blocking layer EML= emissive layer HBL = hole blocking layer ETL = electron transport layer EIL = electron injection layer
  • 20. Electroluminescence propertyElectroluminescence property Device HOMO(eV) LUMO(eV) Turn on voltage (V) EQE (%) 1 5.2 2.6 8.1 5.6 2 5.0 2.6 6.7 8.3 Host= mCP (5.9,2.4) 1 2 Device 1 Device 2 Turn on voltage – 1. Mobility of charges/carrier 2. Hole injection barrier Fig: Current density vs. Voltage plot Ref: Dyes and Pigments, 2017,141, 83-92 20
  • 21. Electroluminescence propertyElectroluminescence property Triplet –triplet anihilation,Triplet –polaron annihilation process at high current density Fig: EQE vs. Current density plot Ref: Adv. Mater. 2014, 26, 7931–7958 21
  • 22. Photophysical characteristicsPhotophysical characteristics Fig: Photoluminescence quantum yield vs. Emitter concentration plot Fig: (a) Molecular structures of the emitters. Ref: Chem. Commun., 2015, 51, 9443—9446 ➢ Bridging sp3 carbon ➢ Concentration quenching in emitter 4, due to planer structure 22
  • 23. Ref: Chem. Commun., 2015, 51, 9443—9446 Photophysical characteristicsPhotophysical characteristics Fig: Normalized intensity vs. Wavelength plot Conclusion = Delayed transition from S1 to S0 state like prompt flurescence one 23
  • 24. ConclusionConclusion 24 ❖ To harvest triplet excitons for light emission. ❖ Preparation of TADF molecules with a high efficiency.