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THE MISSING FUNDAMENTAL
ELEMENT
Memristor
PRESENTED BY –
 SAURAV ROY
3 FUNDAMENTAL PASSIVE CIRCUIT ELEMENTS
Inductor, L (H)
Capacitor, C (F) Resistor, R (Ω)
SYMMETRY OF RELATIONSHIPS
Voltage
(V)
Current(i)
Charge
(q)
Flux (Φ)
dΦ = Ldi Inductors
?
?
v=dΦ/dt i=dq/dt
Resistors
dv=Rdi
dq=CdvCapacitors
FOUNDER OF MISSING
ELEMENT
Leon Chua proposed the existence of
memristor in 1971.
𝑣 = 𝑅 𝑥, 𝑖 𝑖
𝑑𝑥
𝑑𝑡 = 𝑓(𝑥, 𝑖)
o For all passive memristors the generalized forms are
defined as follows
Where x= (x1,x2,x3….xn)denotes n state variables x1,x2,x3…..xn which
do not depend on any external voltage or current.
SYMMETRY OF RELATIONSHIPS
Memristors
dΦ=Mdq
Voltage
(V)
Current
(i)
Charge
(q) Flux (Φ)
dΦ = Ldi
Inductorsv=dΦ/dt
i=dq/dt
Resistors
dv=Rdi
dq=Cdv
Capacitors
 Any two terminal devices which exhibits a pinched
hysteresis loop in the V-I plane when driven by any
bipolar periodic voltage or current waveform, for
any initial conditions, is a memristor.
 It depends on the frequency.
 The area enclosed within the part of the pinched hysteresis loop in the first quadrant,
and the third quadrant, of the vi plane shrinks continuously as the frequency ꙍ
increases, and the hysteresis loop tends to a straight line through the origin as ꙍ tends
to ∞.
 A memristor is a semiconductor whose resistance
varies as a function of flux and charge. This allows it
to “remember” what has passed through the circuit.
 Memristor is a hypothetical non-linear passive two
terminal electrical component relating electric
charge and magnetic flux linkage.
MEMRISTOR
MEMORY RESISTOR+
Memristor
 In 2008 a team lead by Stanley
Williams created the first
memristor.
 As its effect depends on atomic-scale movements, it
only poped up on the nanoscale of William’s
devices.
For RON<<ROFF the memristance was to be determined
as follows
 This is the curve that observed by HP which is similar
to the prescribed curve of Leon. O Chua.
WORKING PRINCIPLE
o Applied voltage makes the oxygen vacancies (+ve) to shift towards the –ve voltage.
• TiO2-x region doped with oxygen vacancies
• In the TiO2-x region, the ratio between titanium atoms and oxygen atoms has been altered such that
there is less oxygen than in a regular TiO2 sample
• The resistance of the device when w = D will be designated RON and when w = 0 the resistance will
be designated as ROFF .
PT PTTiO(2-x)
TiO2
3 nm
2 nm
OxidizedReduced
(-)ve (+)ve
D
W
o In the year 1952, Hodgkin & Huxley had erroneously named two circuit elements associated
with the Potassium ion and the Sodium ion as time-varying conductance in there model.
o Leon Chua et al. 2012 solved many hitherto unsolved paradox associated with the Hodgkin-
Huxley time varying potassium conductance is in fact a first order memristor and the
Hodgkin-Huxley time varying Sodium conductance is in fact a second order memristor.
Memristive synapses are obviously becoming reality, but their real competitive advantage
against mainstream technologies (such as CMOS-based floating-gate memories) has yet to
be evaluated .
A memristor has a memory and at the same time is also
able to change data encoded by its resistance state. In
this sense, a memristor is similar to a synapse,
 The Human Brain possesses nearly 10 billion
neurons,each of which has direct synaptic connections to
nearly 10,000 neurons.A connection between two
neurons in the brain with a high level of plasticity that is
able to modify the efficiency of signal transmission
between neurons under the influence of the transmission
itself. A memristor enables scientists to build a true
neural network,and the physical properties of
memristors mean that a minimum, they can be made as
small as conventional chips.
Synapse
CONCLUSIO
NoThe other applications of memristors are as follows:
• As Image Processor
• As pattern Recognizer
• Can perform logic operations
• In artificial neural networks
• Can work as both memory and logic functions
• Higher data density due to nano-scale size
• Compatible with CMOS process and provide innovating
nanotechnology due to the fact that it performs better the
[1]Chua L., Memristor-The missing circuit element. IEEE Transactions on Circuit Theory, vol.18, n.5, pp. 507- 519, 1971.
[2]By Sally Adee, The Mysterious Memristors , 1 May 2008 .
[3] L. Chua, V. Sbitnev, and H. Kim, Hodgkin–Huxley axon is made of memristors, Int. J. Bifurcat. Chaos, vol. 22, no. 3, 2012.
[4] L. O. Chua and S. M. Kang, Memristive devices and systems, Proc. IEEE, vol. 64, no. 2, pp. 209-223, Feb. 1976.
[5]D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, The missing memristor found, Nature, vol. 453, pp. 80-83, 2008.
[6]M. G. Bray and D. H. Werner, Passive switching of electromagnetic devices with memristors, Appl. Phys. Lett., vol. 96, pp. 0735041-735043,
2010.
[7]J. Borghetti, G. S. Snider, P. J. Kukes, J. J. Yang, D. R. Stewart, and R. S. Williams, Memristive’ switches enable ‘stateful’ logic operations via
material implication, Nature, vol. 464,pp. 873–876, 2010.
[8]K. Kim, S. Shin, and S.-M. Kang, Field programmable stateful logic array, IEEE Trans. Comput.-Aided Design pp. 1800-1813, Dec. 2011.
[9]G. S. Snider, BSpike-timing dependent learning in memristive nano-devices, in Proc. IEEE/ACM Int. Symp. Nanoscale Architecture, 2008, pp.
85-92.
[10]T. Chang, S. H. Jo, and W. Lu, Short-term memory to long-term memory transition in a nano scale memristor, Amer. Chem. Soc. (ACS) Nano,
vol. 5, pp. 7669-7676, 2011.
[11]Hyongsuk Kim, P.Sah ,Changju Yang, Tamas Roska, and L.Chua, Memristor bridge synapses ,vol.100,No.6,June 2012, pp. 2061.
[12]B. Linares-Barranco and T. Serrano-Gotarredona, Memristance can explain spike-time-dependent-plasticity in neural synapses, Nature
Preceding, Mar. 31, 2009.
[13]Y. V. Pershin and M. Di Ventra,Neuromorphic, Digital and Quantum Computation With Memory Circuit Elements,arXiv:1009.6025v3 [cond-
mat.mes-hall].
[14]A. L. Hodgkin and A. F. Huxley, A quantitative description of membrane current and its application to the conduction and excitation in nerve,
J. Physiol., vol. 117, pp. 500–544, 1952.
[15]L. Chua, V. Sbitnev, and H. Kim, Hodgkin–Huxley axon is made of memristors, Int. J. Bifurcat. Chaos, vol. 22, no. 3, 2012.
[16]M. Laiho, E. Lehtonen, A. Russell and P. Dudek ,Memristive synapses are becoming reality, TheNeuromorphicEngineer.
References
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The Missing Fundamental Element

  • 2. 3 FUNDAMENTAL PASSIVE CIRCUIT ELEMENTS Inductor, L (H) Capacitor, C (F) Resistor, R (Ω)
  • 3. SYMMETRY OF RELATIONSHIPS Voltage (V) Current(i) Charge (q) Flux (Φ) dΦ = Ldi Inductors ? ? v=dΦ/dt i=dq/dt Resistors dv=Rdi dq=CdvCapacitors
  • 4. FOUNDER OF MISSING ELEMENT Leon Chua proposed the existence of memristor in 1971.
  • 5. 𝑣 = 𝑅 𝑥, 𝑖 𝑖 𝑑𝑥 𝑑𝑡 = 𝑓(𝑥, 𝑖) o For all passive memristors the generalized forms are defined as follows Where x= (x1,x2,x3….xn)denotes n state variables x1,x2,x3…..xn which do not depend on any external voltage or current.
  • 6. SYMMETRY OF RELATIONSHIPS Memristors dΦ=Mdq Voltage (V) Current (i) Charge (q) Flux (Φ) dΦ = Ldi Inductorsv=dΦ/dt i=dq/dt Resistors dv=Rdi dq=Cdv Capacitors
  • 7.  Any two terminal devices which exhibits a pinched hysteresis loop in the V-I plane when driven by any bipolar periodic voltage or current waveform, for any initial conditions, is a memristor.  It depends on the frequency.  The area enclosed within the part of the pinched hysteresis loop in the first quadrant, and the third quadrant, of the vi plane shrinks continuously as the frequency ꙍ increases, and the hysteresis loop tends to a straight line through the origin as ꙍ tends to ∞.
  • 8.  A memristor is a semiconductor whose resistance varies as a function of flux and charge. This allows it to “remember” what has passed through the circuit.  Memristor is a hypothetical non-linear passive two terminal electrical component relating electric charge and magnetic flux linkage. MEMRISTOR MEMORY RESISTOR+ Memristor
  • 9.  In 2008 a team lead by Stanley Williams created the first memristor.  As its effect depends on atomic-scale movements, it only poped up on the nanoscale of William’s devices. For RON<<ROFF the memristance was to be determined as follows  This is the curve that observed by HP which is similar to the prescribed curve of Leon. O Chua.
  • 10. WORKING PRINCIPLE o Applied voltage makes the oxygen vacancies (+ve) to shift towards the –ve voltage. • TiO2-x region doped with oxygen vacancies • In the TiO2-x region, the ratio between titanium atoms and oxygen atoms has been altered such that there is less oxygen than in a regular TiO2 sample • The resistance of the device when w = D will be designated RON and when w = 0 the resistance will be designated as ROFF . PT PTTiO(2-x) TiO2 3 nm 2 nm OxidizedReduced (-)ve (+)ve D W
  • 11. o In the year 1952, Hodgkin & Huxley had erroneously named two circuit elements associated with the Potassium ion and the Sodium ion as time-varying conductance in there model. o Leon Chua et al. 2012 solved many hitherto unsolved paradox associated with the Hodgkin- Huxley time varying potassium conductance is in fact a first order memristor and the Hodgkin-Huxley time varying Sodium conductance is in fact a second order memristor. Memristive synapses are obviously becoming reality, but their real competitive advantage against mainstream technologies (such as CMOS-based floating-gate memories) has yet to be evaluated .
  • 12. A memristor has a memory and at the same time is also able to change data encoded by its resistance state. In this sense, a memristor is similar to a synapse,  The Human Brain possesses nearly 10 billion neurons,each of which has direct synaptic connections to nearly 10,000 neurons.A connection between two neurons in the brain with a high level of plasticity that is able to modify the efficiency of signal transmission between neurons under the influence of the transmission itself. A memristor enables scientists to build a true neural network,and the physical properties of memristors mean that a minimum, they can be made as small as conventional chips. Synapse
  • 13.
  • 14. CONCLUSIO NoThe other applications of memristors are as follows: • As Image Processor • As pattern Recognizer • Can perform logic operations • In artificial neural networks • Can work as both memory and logic functions • Higher data density due to nano-scale size • Compatible with CMOS process and provide innovating nanotechnology due to the fact that it performs better the
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