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DIPESH ROHILLA(1304058)
SAURAV KUMAR(1304059)
CHANDRA PRAKASH(1304060)
YASHU ARORA(1304061)
MEMRISTOR
INTRODUCTION
Theoretically, Memristors (fourth fundamental circuit element
after resistors, inductors and capacitors) ,a concatenation of
“memory resistors”, are a type of passive circuit elements
with states that maintain a relationship between the time
integrals of current and voltage across a two terminal
element.
Electronic symbol
HISTORY
• Theory was developed in 1971 by Professor Leon
Chua at University of California, Berkeley.
• In 2008, a team at HP Labs under R.Stanley Williams
claimed to have found Chua's missing memristor
based on an analysis of a thin film of titanium dioxide.
• In March 2012, a team of researchers from HRL
Laboratories and the University of Michigan
announced the first functioning memristor array built
on a CMOS chip.
LEON CHUA HISTORIC
DISCOVERY
SIMPLIFIED
DEFINITIONAs the name suggests its resistance (dV/dI)
depends on the charge that HAD flowed
through the circuit.
When current flows in one direction the
resistance increases, in contrast when the
current flows in opposite direction the
resistance decreases.
However resistance cannot go below zero.
When the current is stopped the resistance
remains in the value that it had earlier.
It means MEMRISTOR “REMEMBERS” the
Analogy
Memristors behaves like a pipe whose
diameter varies according to the amount
and direction of the current passing through
it
WORKING (CONTRIBUTION OF HP
LABS)
PT PTTiO(2-x)
TiO2
3
nm
2 nm
OxidizedReduced
(-)ve (+)ve
• TiO2-x region doped with oxygen vacancies
• In the TiO2-x region, the ratio between titanium atoms and oxygen atoms has
been altered such that there is less oxygen than in a regular TiO2 sample
• The resistance of the device when w = D will be designated RON and when w
= 0 the resistance will be designated as ROFF .
EQUATIONS
Further Calculations leads to:
• For RON<< ROFF the memristance function was determined to be
M(q(t)) = ROFF . (1-
μv RON
D2 q(t))
OR OR
APPLICATION OF
MEMRISTOR
(1)AS A SWITCH.
(2)AS A NONVOLATILE
MEMORY.
(3)CAN PERFORM
LOGICAL OPERATION.
(4)IN ARTIFICIAL
NEUTRAL NETWORK.
M(Q)=ROFF + RON
0 1Off state (high
resistance)
On state (low
resistance)
BENEFITS OF MEMRISTORS
 Fast switching device(faster than CMOS).
 Has relatively very smaller size, works more effectively below nm range.
 One memristor can replace many transistors as one unit stores more bit of information than it.
 Has much longer life than currently present storage devices as SSD(Solid state devices),can
sustain upto years.
 Would allow for a quicker boot up since information is not lost when the device is turned off.
 Uses less energy and produces less heat.
 Eliminates the need to write computer programs that replicate small parts of the brain.
CONCLUSION
Memristor is a fourth fundamental
circuit element and will change circuit
design in the 21st century.
THANK YOU
•RespectedProf.
Dr. Md.Waseem.Akram.

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MEMRISTOR vlsi ppt

  • 1. DIPESH ROHILLA(1304058) SAURAV KUMAR(1304059) CHANDRA PRAKASH(1304060) YASHU ARORA(1304061) MEMRISTOR
  • 2. INTRODUCTION Theoretically, Memristors (fourth fundamental circuit element after resistors, inductors and capacitors) ,a concatenation of “memory resistors”, are a type of passive circuit elements with states that maintain a relationship between the time integrals of current and voltage across a two terminal element. Electronic symbol
  • 3. HISTORY • Theory was developed in 1971 by Professor Leon Chua at University of California, Berkeley. • In 2008, a team at HP Labs under R.Stanley Williams claimed to have found Chua's missing memristor based on an analysis of a thin film of titanium dioxide. • In March 2012, a team of researchers from HRL Laboratories and the University of Michigan announced the first functioning memristor array built on a CMOS chip.
  • 5. SIMPLIFIED DEFINITIONAs the name suggests its resistance (dV/dI) depends on the charge that HAD flowed through the circuit. When current flows in one direction the resistance increases, in contrast when the current flows in opposite direction the resistance decreases. However resistance cannot go below zero. When the current is stopped the resistance remains in the value that it had earlier. It means MEMRISTOR “REMEMBERS” the Analogy Memristors behaves like a pipe whose diameter varies according to the amount and direction of the current passing through it
  • 6. WORKING (CONTRIBUTION OF HP LABS) PT PTTiO(2-x) TiO2 3 nm 2 nm OxidizedReduced (-)ve (+)ve • TiO2-x region doped with oxygen vacancies • In the TiO2-x region, the ratio between titanium atoms and oxygen atoms has been altered such that there is less oxygen than in a regular TiO2 sample • The resistance of the device when w = D will be designated RON and when w = 0 the resistance will be designated as ROFF .
  • 7. EQUATIONS Further Calculations leads to: • For RON<< ROFF the memristance function was determined to be M(q(t)) = ROFF . (1- μv RON D2 q(t)) OR OR
  • 8. APPLICATION OF MEMRISTOR (1)AS A SWITCH. (2)AS A NONVOLATILE MEMORY. (3)CAN PERFORM LOGICAL OPERATION. (4)IN ARTIFICIAL NEUTRAL NETWORK. M(Q)=ROFF + RON 0 1Off state (high resistance) On state (low resistance)
  • 9. BENEFITS OF MEMRISTORS  Fast switching device(faster than CMOS).  Has relatively very smaller size, works more effectively below nm range.  One memristor can replace many transistors as one unit stores more bit of information than it.  Has much longer life than currently present storage devices as SSD(Solid state devices),can sustain upto years.  Would allow for a quicker boot up since information is not lost when the device is turned off.  Uses less energy and produces less heat.  Eliminates the need to write computer programs that replicate small parts of the brain.
  • 10. CONCLUSION Memristor is a fourth fundamental circuit element and will change circuit design in the 21st century.