The document is a device modeling report for the S30SC4MT Schottky rectifier from Shindengen Bee Technologies Inc. It includes circuit configuration, SPICE model parameters, performance evaluations of forward current characteristics, capacitance characteristics, and reverse characteristics, along with comparison graphs of measurement vs simulation results. It provides detailed data and simulations for various electrical parameters, showcasing the device's performance metrics.

1. Device Modeling Report
COMPONENTS:
DIODE/ SCHOTTKY RECTIFIER / PROFESSIONAL
PART NUMBER: S30SC4MT
MANUFACTURER: SHINDENGEN
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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2. Circuit Configuration
U1
S30SC4MT
1 2 3
Spice Model Parameters
PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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3. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.5V 1.0V 1.5V 2.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc S30SC4MT
R2
100MEG
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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4. Comparison Graph
Circuit Simulation Result
100
FORWARD CURRENT:IF(A)
10
1
Measurement
Simulation
0.1
0 0.5 1 1.5 2
FORWARD VOLTAGE：VF(V)
Simulation Result
Vfwd (V)
Ifwd (A) %Error
Measurement Simulation
0.1 0.2600 0.2562 -1.46
0.2 0.2800 0.2748 -1.86
0.5 0.3000 0.3009 0.28
1 0.3200 0.3221 0.67
2 0.3500 0.3469 -0.87
5 0.3950 0.3913 -0.93
10 0.4400 0.4435 0.81
20 0.5200 0.5300 1.92
50 0.7500 0.7583 1.11
100 1.1300 1.1140 -1.42
150 1.4500 1.4588 0.61
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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5. Capacitance Characteristic
Circuit Simulation Result
5.0n
1.0n
100p
10p
100mV 1.0V 10V 40V
I(V2)/(40V/100n)
V(N16610)
Evaluation Circuit
V2
0Vdc R1
100MEG
V2 = 40 V1
V1 = 0 U1
TD = 0 S30SC4MT
TR = 100ns
TF = 100ns
PW = 100us
PER = 500us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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6. Comparison Graph
Circuit Simulation Result
10000
Measurement
Simulation
JUNCTION CAPACITANCE
1000
Cj(pF)
100
10
0.1 1 10
REVERSE VOLTAGE:VR(V)
Simulation Result
Cj (pF)
VR (V) %Error
Measurement Simulation
0.1 1800.000 1813.700 0.76
0.2 1650.000 1670.200 1.22
0.5 1400.000 1384.200 -1.13
1 1150.000 1123.600 -2.30
2 870.000 865.789 -0.48
5 590.000 581.680 -1.41
10 415.000 420.903 1.42
20 300.000 301.076 0.36
40 215.000 214.136 -0.40
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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7. Reverse Characteristic
Circuit Simulation Result
1.0mA
100uA
10uA
1.0uA
0V 10V 20V 30V 40V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m R2
100MEG
V1
0Vdc U1
S30SC4MT
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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8. Comparison Graph
Circuit Simulation Result
1
Measurement
Simulation
REVERSE CURRENT:IR(mA )
0.1
0.01
0.001
0 5 10 15 20 25 30 35 40
REVERSE VOLTAGE：VR(V)
Simulation Result
IR(mA)
VR(V) Error (%)
Measurement Simulation
2 0.010 0.010 -4.83
5 0.013 0.013 0.97
10 0.018 0.018 -1.53
15 0.022 0.022 0.20
20 0.028 0.028 -0.73
25 0.037 0.037 -0.81
30 0.050 0.050 0.94
35 0.070 0.071 1.18
40 0.100 0.099 -0.52
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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