SPICE MODEL of STPSC406 (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: STPSC406
MANUFACTURER: STMicroelectronics
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

3. Forward Current Characteristic
Circuit Simulation Result
8.0A
7.0A
6.0A
5.0A
4.0A
3.0A
2.0A
1.0A
0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc STPSC406_P
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

4. Comparison Graph
Circuit Simulation Result
8
Measurement
Simulation
7
FORWARD CURRENT: IF(A)
6
5
4
3
2
1
0
0 0.5 1 1.5 2 2.5 3 3.5
FORWARD VOLTAGE: VF(V)
Simulation Result
VF(V)
IF(A) Error (%)
Measurement Simulation
0.2 0.9000 0.9067 0.75
0.5 0.9800 0.9771 -0.29
1 1.0800 1.0729 -0.66
2 1.2500 1.2465 -0.28
3 1.4100 1.4127 0.19
4 1.5800 1.5786 -0.09
5 1.7300 1.7372 0.42
6 1.9000 1.8976 -0.13
7 2.0600 2.0573 -0.13
8 2.2200 2.2164 -0.16
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

5. Junction Capacitance Characteristic
Circuit Simulation Result
150p
125p
100p
75p
50p
25p
0
1.0V 10V 100V 400V
I(V2)/(400V/500n)
V(N16610)
Evaluation Circuit
V2
0Vdc
V2 = 400 V1 U1
V1 = 0 STPSC406_P
TD = 0
TR = 500ns
TF = 500ns
PW = 100us
PER = 500us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

6. Comparison Graph
Circuit Simulation Result
150
Measurement
Simulation
125
CAPACITANCE: C(pF)
100
75
50
25
0
1 10 100 1000
REVERSE VOLTAGE:VR(V)
Simulation Result
C (pF)
VR(V) Error (%)
Measurement Simulation
1 142.000 143.511 1.06
2 119.000 118.718 -0.24
5 88.000 87.996 0.00
10 68.000 68.532 0.78
20 52.000 52.823 1.58
50 36.000 37.117 3.10
100 27.500 28.331 3.02
200 22.000 21.615 -1.75
300 19.200 18.451 -3.90
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

7. Reverse Characteristic
Circuit Simulation Result
10mA
1.0mA
100uA
10uA
1.0uA
100nA
10nA
0V 50V 100V 150V 200V 250V 300V 350V 400V 450V 500V 550V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc STPSC406_P
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

8. Comparison Graph
Circuit Simulation Result
1.E+04
Measurement
Simulation
1.E+03
REVERSE CURRENT:IR(uA )
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
0 50 100 150 200 250 300 350 400 450 500 550 600
REVERSE VOLTAGE：VR(V)
Simulation Result
IR(uA)
VR(V) Error (%)
Measurement Simulation
25 0.087 0.083 25
50 0.178 0.186 50
100 0.315 0.307 100
200 0.750 0.762 200
300 1.800 1.791 300
400 4.500 4.502 400
500 15.000 15.001 500
600 51.000 51.000 600
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010