This document provides a device modeling report for the STPSC1206 silicon carbide Schottky diode manufactured by STMicroelectronics. It includes detailed parameters for the diode's PSpice model, simulation results for forward current characteristics, junction capacitance, and reverse characteristics, comparing simulation data with measurement results. The report also includes graphs illustrating the performance of the diode at various current and voltage levels, showcasing the accuracy of the simulation against actual measurements.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: STPSC1206
MANUFACTURER: STMicroelectronics
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

3. Forward Current Characteristic
Circuit Simulation Result
24A
22A
20A
18A
16A
14A
12A
10A
8A
6A
4A
2A
0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc STPSC1206_P
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

4. Comparison Graph
Circuit Simulation Result
24
Measurement
22
Simulation
20
FORWARD CURRENT: IF(A)
18
16
14
12
10
8
6
4
2
0
0 0.5 1 1.5 2 2.5 3
FORWARD VOLTAGE: VF(V)
Simulation Result
VF(V)
IF(A) Error (%)
Measurement Simulation
0.5 0.9000 0.9033 0.36
1 0.9400 0.9406 0.06
2 0.9950 0.9973 0.23
4 1.1000 1.0928 -0.65
8 1.2700 1.2659 -0.32
12 1.4300 1.4316 0.11
16 1.5900 1.5942 0.26
20 1.7500 1.7551 0.29
24 1.9200 1.9150 -0.26
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

5. Junction Capacitance Characteristic
Circuit Simulation Result
600p
500p
400p
300p
200p
100p
0
1.0V 10V 100V 400V
I(V2)/(400V/500n)
V(N16610)
Evaluation Circuit
V2
0Vdc
V2 = 400 V1 U1
V1 = 0 STPSC1206_P
TD = 0
TR = 500ns
TF = 500ns
PW = 100us
PER = 500us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

6. Comparison Graph
Circuit Simulation Result
600
Measurement
Simulation
500
CAPACITANCE: C(pF)
400
300
200
100
0
1 10 100 1000
REVERSE VOLTAGE:VR(V)
Simulation Result
C (pF)
VR(V) Error (%)
Measurement Simulation
1 540.000 545.845 1.08
2 450.000 449.696 -0.07
5 328.000 325.155 -0.87
10 243.000 246.083 1.27
20 180.000 183.292 1.83
50 120.000 122.474 2.06
100 88.000 89.934 2.20
200 65.000 65.938 1.44
300 57.500 54.913 -4.50
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

7. Reverse Characteristic
Circuit Simulation Result
10mA
1.0mA
100uA
10uA
1.0uA
100nA
0V 50V 100V 150V 200V 250V 300V 350V 400V 450V 500V 550V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc STPSC1206_P
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

8. Comparison Graph
Circuit Simulation Result
1.E+04
Measurement
Simulation
1.E+03
REVERSE CURRENT:IR(uA )
1.E+02
1.E+01
1.E+00
1.E-01
0 50 100 150 200 250 300 350 400 450 500 550 600
REVERSE VOLTAGE：VR(V)
Simulation Result
IR(uA)
VR(V) Error (%)
Measurement Simulation
50 0.510 0.511 0.17
100 1.050 1.049 -0.11
200 2.800 2.800 -0.02
300 6.300 6.304 0.06
400 14.500 14.495 -0.03
500 39.000 38.978 -0.06
600 145.000 144.894 -0.07
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010