Dr. Evgeny Chernyavskiy has over 20 years of experience in semiconductor physics and solid state electronics. He has a PhD in Semiconductor Physics and Solid State Electronics from the Institute of Semiconductor Physics. His areas of expertise include device physics, modeling, manufacturing, and testing of power semiconductor devices such as MOS gated power devices, fast recovery diodes, integrated sensors, solar cells, and HV-IGBTs. He has published over 20 papers in peer-reviewed journals and conferences on topics related to semiconductor device design and characterization.