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High gain semiconductor optical amplifiers
The document discusses high-gain semiconductor optical amplifiers (SOAs). It covers several approaches to reducing facet reflectivity in traveling wave SOAs, including anti-reflection coatings, tilted active regions, and transparent window regions. It also summarizes several research papers on specific high-gain SOA designs and technologies, such as those using single layer anti-reflection coatings, angled facets, multilayer coatings, and quantum dot active regions.
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High gain semiconductor optical amplifiers
- 1. HIGH-GAIN SEMICONDUCTOR OPTICAL AMPLIFIERS By: HojjatollahSarvari Department of Electrical Engineering Shiraz University, Shiraz-Iran October-2008
- 2. INTRODUCTION SEMICONDUCTOR OPTICAL AMPLIFIER Fabry-PerotAmplifier Traveling wave amplifier
- 3. To make atraveling wave Semiconductor Optical Amplifier,reflectivity must be reduced. Three approaches are commonly used: Anti-reflection coating Tilted Active Region Use of transparent window regions INTRODUCTION Structures for reduce facet’s refelectivity
- 4. 1.55 µm PolarisationIndependent Semiconductor Optical Amplifier with 25 dB Fiber to Fiber Gain P. Doussiere, P. Garabedian, C. Graver, D. Bonnevie, T. Fillion, E. Derouin, M. Monnot, J. G. Provost, D. Leclerc, Associate, IEEE, and M. Klenk IEEE PHOTONICS TECHNOLOGY LETTERS. VOL. 6, NO. 2, FEBRUARY 1994
- 5. Low noise figure(7.2dB) and high gain (29dB) semiconductor optical amplifier with a single layer AR coating A.E.Kelly,L.F.lealman,L.J.Rivers,S.D.Perrin,And M.Silver ELECTRONiCS LETTERS 13th March 1997 Vol. 33 No. 6
- 6. Low noise figure(7.2dB) and high gain (29dB) semiconductor optical amplifier with a single layer AR coating A.E.Kelly,L.F.lealman,L.J.Rivers,S.D.Perrin,And M.Silver ELECTRONiCS LETTERS 13th March 1997 Vol. 33 No. 6
- 7. Angled-Facet S-Bend SemiconductorOptical Amplifiers for High-Gain & Large-Extinction Ratio Shotaro Kitamura, Hiroshi Hatakeyama, Takemasa Tamanuki, Tatsuya Sasaki, Keiro Komatsu, and Masayuki Yamaguchi IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 11, NO. 7, JULY 1999
- 8. Improved Characterization ofMultilayer Antireflection Coatings for Broad-Band Semiconductor Optical Amplifiers Jungkeun Lee and Takeshi Kamiya, Member, IEEE JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 18, NO. 12, DECEMBER 2000
- 9. High-Gain Semiconductor OpticalAmplifier With 12.4-dBm Saturation Output Power at 1550 nm K. Dreyer, C. H. Joyner, J. L. Pleumeekers, C. A. Burrus, Life Fellow, IEEE, A. Dentai, Fellow, IEEE, B. I. Miller, Member, IEEE, S. Shunk, P. Sciortino, S. Chandrasekhar, Fellow, IEEE, L. Buhl, F. Storz, and M. Farwell JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 20, NO. 4, APRIL 2002
- 10. High-Gain Semiconductor OpticalAmplifier With 12.4-dBm Saturation Output Power at 1550 nm K. Dreyer, C. H. Joyner, J. L. Pleumeekers, C. A. Burrus, Life Fellow, IEEE, A. Dentai, Fellow, IEEE, B. I. Miller, Member, IEEE, S. Shunk, P. Sciortino, S. Chandrasekhar, Fellow, IEEE, L. Buhl, F. Storz, and M. Farwell JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 20, NO. 4, APRIL 2002
- 11. Quantum-Dot Semiconductor OpticalAmplifiers By Tomoyuki Akiyama, Member IEEE, Mitsuru Sugawara, and Yasuhiko Arakawa, Fellow IEEE Proceedings of the IEEE | Vol. 95, No. 9, September 2007
- 12. Quantum-Dot Semiconductor OpticalAmplifiers By Tomoyuki Akiyama, Member IEEE, Mitsuru Sugawara, and Yasuhiko Arakawa, Fellow IEEE Proceedings of the IEEE | Vol. 95, No. 9, September 2007
- 13. Comparison with otherSOA-based regenerators and Comparison of Bandwidths
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