Ete411 Lec15
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Lecture on Introduction of Semiconductor at North South University as the undergraduate course (ETE411) ======================= Dr. Mashiur Rahman Assistant Professor Dept. of Electrical Engineering and Computer Science North South University, Dhaka, Bangladesh http://mashiur.biggani.org
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2. The AC current gain (β) is the ratio of changes in collector and base currents. It is typically less than 1, but the transistor still provides voltage and power gain due to the high load resistance.
3. The relation between α and β is defined as β=α/(1-α) and α=β/(1-β).
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1. The forward current transfer ratio (CB) is represented by a horizontal line on an Ic-VCB graph, showing Ic=IE. The DC current gain (α) is defined as the ratio of collector current (Ic) to base current (IE).
2. The AC current gain (β) is the ratio of changes in collector and base currents. It is typically less than 1, but the transistor still provides voltage and power gain due to the high load resistance.
3. The relation between α and β is defined as β=α/(1-α) and α=β/(1-β).
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This document provides an overview of bipolar junction transistors (BJTs) including:
- The basic structure and operation of NPN and PNP BJTs. Current flows from the emitter to the collector when the base-emitter junction is forward biased.
- The three regions of operation for BJTs: active, saturation, and cut-off. It also describes the three common configurations: common base, common emitter, and common collector.
- Key transistor parameters like current gain (alpha for CB, beta for CE), leakage currents (ICBO, ICEO), and the relationships between various currents that flow in the transistor.
Unit 2.pdf
1. A transistor is a semiconductor device with three terminals (emitter, base, collector) that can amplify or switch electronic signals and electrical power. It was invented in 1947 as a replacement for vacuum tubes.
2. There are two main types of transistors - NPN and PNP. In an NPN transistor, the base-emitter junction is forward biased, allowing current to flow from the emitter to the collector. The small base current controls a much larger collector current.
3. Transistors can be connected in common base, common emitter, or common collector configurations. The common emitter configuration provides both current and voltage gain and is widely used in amplifiers.
Chapter-5- Transistor Characteristics-1.ppt
This document discusses the characteristics and operation of bipolar junction transistors (BJTs). It covers:
- The two types of BJTs - PNP and NPN, which differ in the doping of their layers.
- The three terminals of a BJT - emitter, base, and collector. The base is thinner than the other layers. Emitter injects carriers into the base, and collector collects carriers from the base.
- The operation of NPN and PNP transistors under forward bias of the emitter-base junction and reverse bias of the collector-base junction. Carriers flow from emitter to collector, with a small portion recombining in the base.
-
BJT Biasing for B.Tech Ist Year Engineering
Okay, let's solve this step-by-step:
1) Given: IC = 2 mA
2) We're told IC = βIB
3) So we can set up and solve for β:
IC = βIB
2 mA = βIB
β = IC/IB = 2 mA / 0.5 mA = 4
So the answer for part a is:
β = 4
4) We're also given: IB = 0.5 mA
5) Using the voltage divider formula:
VB = VCC * (RB2 / (RB1 + RB2))
6) We know: VB = 0.7 V (for the B-
ADE UNIT-2.pptx
This document provides an overview of the bipolar junction transistor (BJT). It discusses the structure of the BJT including the emitter, base, and collector regions. It describes the three modes of operation - cutoff, saturation, and active mode. The active mode is used for amplification as it forward biases the base-emitter junction and reverse biases the base-collector junction. The document also discusses the three transistor configurations - common base, common emitter, and common collector. It provides details on the input and output characteristics for both the common base and common emitter configurations.
Transistor biasing
There are four main methods of transistor biasing: base resistor method, emitter bias method, biasing with collector feedback resistor, and voltage-divider bias method. The document then focuses on explaining the base resistor method and voltage-divider bias method in more detail. For the base resistor method, a resistor is used to provide base current, but it has poor stability. For the voltage-divider bias method, two resistors are used to provide stable biasing of the transistor by controlling the base-emitter voltage. This method is widely used due to its stability from the emitter resistor preventing changes in collector current.
Bipolar junction transisitors.ppt
The document discusses the basic structure and operation of bipolar junction transistors (BJTs). It describes how a BJT has three layers forming two p-n junctions, and can be used as an amplifier by forward biasing the base-emitter junction while reverse biasing the base-collector junction. The document also explains how BJTs can function as switches by biasing them into either cutoff or saturation modes, and covers other key topics like transistor characteristics curves and troubleshooting techniques.
Aec ppt2
THIS ANALOG ELECTRONICS CIRCUIT PPT COVER ALL PORTION OF THIS SUBJECT.MODULE 1 DC ANALYSIS OF BJT AND FET ,D.C LOAD LINE,STABILIZATION TECHNIQUE
MODULE-2 AC ANALYSIS OF BJT
MODULE-3 OPERATIONAL AMPLIFIER,FEEDBACK TOPOLOGY,OSCILLATOR
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Bjt(common base ,emitter,collector) from university of central punjab
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Ete411 Lec15
- 1. ETE444 :: Lec15 Dr. Mashiur Rahman Copyright: Semiconductor Physics And Devices 3rd ed. - J. Neamen
- 4. Injection and collection of electrons
- 5. iE1= due to the flow of electrons injected into the base = ic ic iE ic iB α = Common-Base current gain β = Common-Emitter gain
- 8. Four operation mode of bipolar transistor n
- 9. Cuttoff mode VCB> 0 VBE < 0 B-E = reverse biased Mejority carrier electrons from the emitter will not injected into the bias Minority carrier distribution
- 10. Forward active mode The B-E junction becomes forward biased, an emitter current will be generated and the injection of electrons into the base results in a collector current VCB> 0 VBE > 0 Minority carrier distribution
- 11. Inverse active The B-E forward biased and C-B VCB < 0 VBE < 0 Minority carrier distribution
- 12. Saturation mode Both B-E and B-C junctions are forward biased and the collector current no longer controlled by the B-E voltage. VCB< 0 VBE > 0 Minority carrier distribution
- 14. Application • Voltage amplifier by Bipolar Transistors • Switching
- 15. Voltage amplifier by Bipolar Transistors Input sinusoidal signal voltage Sinusoidal voltage across the Rc resistor Sinusoidal collector currents Sinusoidal base currents
- 16. Switching Raise time Storage time Fall time Circuit used for transistor switching Delay time
- 17. Switching :: Important parameter • Current gain – lower doping in the base region is used. • Switching time – The transistor can be doped with gold to introduce midgap recombination centers and thus reduce the switching time.