The document summarizes research on the effect of substrate temperature on the morphological and optical properties of ZnO thin films formed by DC magnetron sputtering. ZnO films were deposited on glass substrates held at temperatures between 473-673 K. Atomic force microscopy analysis showed that substrate temperature affected the roughness and grain size of the films. Optical analysis found that substrate temperature influenced the transmittance, band gap, and extinction coefficient of the films. The films deposited near 513 K exhibited optimal optical properties such as highest transmittance and band gap.
Effect of Temperature on Structural, Morphological and Optical Properties of ...RSIS International
The Pure zinc oxide (ZnO) thin films of different substrate temperature have been prepared on well cleaned glass substrate by improved spray pyrolysis technique. The gross structure of the annealed films have been examined by X- ray diffraction (XRD) technique using powder X- ray diffractometer which reveals the enhancement of crystallinity with increase in the deposition temperature. Surface morphology of the synthesized ZnO thin films have been analyzed by means of atomic force microscopy (AFM) which reveals average particle size of as synthesize ZnO thin films has been found to be 79 nm. The band gap as deposited ZnO have been examined by UV-Vis spectroscopy carried out in absorption mode by Double Beam UV- VIS Spectrophotometer with radiations in the range of 훌= 190 nm to 1100 nm which is in the range of 3.03 eV to 3.16 eV.
Preparation and Properties of Nanocrystalline Zinc Oxide Thin Filmsijtsrd
Metal oxide is highly important material which possesses many unique optical and electrical properties for applications in many areas such as Solar cells, Gas sensors and so on. With the development of research and applications of Metal oxide thin films, research results are verified that the morphology of Metal oxide thin films are plays an important role in applications of these films. Variety of morphologies, complex structure has been developed by physical or chemical methods. However the work on controlled growth of these films is still in developing state. Therefore in present work we deposited ZnS and ZnO metal oxides thin films on different substrates by Chemical Bath Deposition Technique. Structural, Surface Morphology and Optical properties of as deposited films were investigated by XRD, SEM, and UV VIS Spectrophotometer. The band gap is also calculated from the equation relating absorption co efficient to wavelength. The band gap indicates the film is transmitting within the visible range and the band gaps changes because of the grain size of the films. We also observed that, the change in preparative parameters affects the deposition rate of thin films. From the observation, it is clear that the growth rate increases as the deposition temperature, increases. S. S. Kawar "Preparation and Properties of Nanocrystalline Zinc Oxide Thin Films" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-4 | Issue-4 , June 2020, URL: https://www.ijtsrd.com/papers/ijtsrd31623.pdf Paper Url :https://www.ijtsrd.com/physics/nanotechnology/31623/preparation-and-properties-of-nanocrystalline-zinc-oxide-thin-films/s-s-kawar
Effect of Sn Doping on Structural and Electrical Properties of ZnO Thin Films...journal ijrtem
Abstract: Un-doped and tin (Sn) doped ZnO films were deposited on heated glass substrates by chemical spray pyrolysis method
(CSP). The effect of Sn concentration on the structural, surface morphological and electrical properties of the SnO2 films was
investigated. XRD analyses showed that the obtained films are polycrystalline in nature with hexagonal structure with preferred
orientation of (101). Doping with tin (Sn) causes increase in the grain size. Atomic force microscopy images showed that the root
mean square of the average surface roughness's varied from (1.48 to 3.58) as dopant concentration increased from 0 to 5 wt.%. The
electrical properties of the Sn ZnO films were strongly influenced by doping concentration. The electrical resistance of the films was
sharply decreased as dopant concentration increased.
Keywords: (ZnO) thin films, Sn Doping, Structural and electrical Properties
Influence of Doping and Annealing on Structural, Optical and Electrical prope...ijeei-iaes
The optical gap of the films was calculated from the curve of absorption coefficient (αhע)2 vs. hע and was found to be 3.8 eV at room temperature, and this value decreases from 3.8 to 3.58 eV with increasing of annealing temperature up to 473-673 K, and increases with the Ga doping. λ cutoff was calculated for ZnO and showed an increase with increasing annealing temperature and shifting to longer wavelength, while with doping the λcutoff shifted to shorter wavelength. The photoluminescence (PL) results indicate that the pure ZnO thin films grown at room temperature show strong peaks at 640 nm , but GaO doped ZnO films showed a band emission in the yellow-green spectral region (380 to 450nm).
Effect of Temperature on Structural, Morphological and Optical Properties of ...RSIS International
The Pure zinc oxide (ZnO) thin films of different substrate temperature have been prepared on well cleaned glass substrate by improved spray pyrolysis technique. The gross structure of the annealed films have been examined by X- ray diffraction (XRD) technique using powder X- ray diffractometer which reveals the enhancement of crystallinity with increase in the deposition temperature. Surface morphology of the synthesized ZnO thin films have been analyzed by means of atomic force microscopy (AFM) which reveals average particle size of as synthesize ZnO thin films has been found to be 79 nm. The band gap as deposited ZnO have been examined by UV-Vis spectroscopy carried out in absorption mode by Double Beam UV- VIS Spectrophotometer with radiations in the range of 훌= 190 nm to 1100 nm which is in the range of 3.03 eV to 3.16 eV.
Preparation and Properties of Nanocrystalline Zinc Oxide Thin Filmsijtsrd
Metal oxide is highly important material which possesses many unique optical and electrical properties for applications in many areas such as Solar cells, Gas sensors and so on. With the development of research and applications of Metal oxide thin films, research results are verified that the morphology of Metal oxide thin films are plays an important role in applications of these films. Variety of morphologies, complex structure has been developed by physical or chemical methods. However the work on controlled growth of these films is still in developing state. Therefore in present work we deposited ZnS and ZnO metal oxides thin films on different substrates by Chemical Bath Deposition Technique. Structural, Surface Morphology and Optical properties of as deposited films were investigated by XRD, SEM, and UV VIS Spectrophotometer. The band gap is also calculated from the equation relating absorption co efficient to wavelength. The band gap indicates the film is transmitting within the visible range and the band gaps changes because of the grain size of the films. We also observed that, the change in preparative parameters affects the deposition rate of thin films. From the observation, it is clear that the growth rate increases as the deposition temperature, increases. S. S. Kawar "Preparation and Properties of Nanocrystalline Zinc Oxide Thin Films" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-4 | Issue-4 , June 2020, URL: https://www.ijtsrd.com/papers/ijtsrd31623.pdf Paper Url :https://www.ijtsrd.com/physics/nanotechnology/31623/preparation-and-properties-of-nanocrystalline-zinc-oxide-thin-films/s-s-kawar
Effect of Sn Doping on Structural and Electrical Properties of ZnO Thin Films...journal ijrtem
Abstract: Un-doped and tin (Sn) doped ZnO films were deposited on heated glass substrates by chemical spray pyrolysis method
(CSP). The effect of Sn concentration on the structural, surface morphological and electrical properties of the SnO2 films was
investigated. XRD analyses showed that the obtained films are polycrystalline in nature with hexagonal structure with preferred
orientation of (101). Doping with tin (Sn) causes increase in the grain size. Atomic force microscopy images showed that the root
mean square of the average surface roughness's varied from (1.48 to 3.58) as dopant concentration increased from 0 to 5 wt.%. The
electrical properties of the Sn ZnO films were strongly influenced by doping concentration. The electrical resistance of the films was
sharply decreased as dopant concentration increased.
Keywords: (ZnO) thin films, Sn Doping, Structural and electrical Properties
Influence of Doping and Annealing on Structural, Optical and Electrical prope...ijeei-iaes
The optical gap of the films was calculated from the curve of absorption coefficient (αhע)2 vs. hע and was found to be 3.8 eV at room temperature, and this value decreases from 3.8 to 3.58 eV with increasing of annealing temperature up to 473-673 K, and increases with the Ga doping. λ cutoff was calculated for ZnO and showed an increase with increasing annealing temperature and shifting to longer wavelength, while with doping the λcutoff shifted to shorter wavelength. The photoluminescence (PL) results indicate that the pure ZnO thin films grown at room temperature show strong peaks at 640 nm , but GaO doped ZnO films showed a band emission in the yellow-green spectral region (380 to 450nm).
This paper reports the effect of the different deposition methods towards the ZnO nanostructure crystal quality and film thickness on the polyimide substrate. The ZnO film has been deposited by using the spray pyrolysis technique, sol-gel and RF Sputtering. Different methods give a different nanostructure of the ZnO thin film. Sol gel methods, results of nanoflowers ZnO thin film with the thickness of thin film is 600nm. It also produces the best of the piezoelectric effect in term of electrical performance, which is 5.0 V and 12 MHz of frequency which is higher than other frequency obtained by spray pyrolysis and RF sputtering.
Dye Sensitized Solar Cells Incorporated with Tio2 -ZnO NanoparticlesScientific Review SR
We demonstrated an improvement in efficiency of Dye sensitized solar cells (DSSCs) decorated with
zinc oxide (ZnO) nanoparticles (NPs) through successive ionic layer adsorption and reaction (SILAR). A series of
ZnO with different SILAR cycles were synthesized on TiO
2 that has been pre-grown on fluorine tin oxide (FTO)
glass slides. The performance of DSSCs containing ZnO NPs was significantly affected. The photovoltaic (PV)
performance decreased with increasing number of SILAR cycles from two SILAR cycles to four SILAR cycles,
the best performance was achieved using the anodes prepared with two SILAR cycles. The best cell shows a
conversion efficiency (η) of 0.0064 %. The cell exhibits ~ 2.13 improvement over the performance (0.0030 %) of
bare FTO-based device. The related PV performance enhancement mechanism is discussed
Synthesis and characterization of zno thin films deposited by chemical bath t...eSAT Journals
Abstract ZnO thin films have been deposited on silica glass substrate using the chemical bath deposition technique. The precursors used were zinc chloride and aqueous ammonia. The solution was stirred continuously with the help of a magnetic stirrer at a bath temperature of 70 oC and a deposition time of 70 minutes. The elemental composition and the surface morphology were studied using energy dispersive and scanning electron microscopy. The band gap was 2.72, 2.66, 2.60 eV for as-deposited, annealed at 200 oC and 300 oC respectively. There was a red shift in the band gap energy as the annealing temperature was increased. This might be due to an improvement in the crystallinity of the ZnO thin films. Index Terms: Zinc oxide, chemical bath, band gap, annealing
EFFECT OF ZN CONCENTRATION ON STRUCTURAL AND OPTICAL PROPRIETIES OF ZNO THIN ...AEIJjournal2
ZnO thin film were deposited by spray pyrolysis on glass substrates, using zinc nitrate as precursor with
different molar concentrations varying from 0.05M to 0.2 M. To study the structural proprieties of the film ,
the different technique was used as the X-ray diffraction, atomic force microscopy (AFM), Raman
scattering , and FTIR . The optical properties were explored by transmission, reflectivity and
Photoluminescence techniques. The ZnO thin films obtained in this paper are polycrystallines, the grain
size increases when the molar concentration of Zn precursor was increasing. The films are transparent in
visible region, this transmission values decreases when the molar concentration increase caused by the
increasing of surface roughness
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
An Investigation of SILAR Grown Cobalt Selenide Thin Films IIJSRJournal
Nowadays, several deposition techniques have been used to produce thin film materials. The obtained films were characterized by using different tools. These semiconductor materials could be employed in solar cell, laser devices and opto-electronic devices. The main objective of this work is to produce cobalt selenide thin films through successive ionic layer adsorption and reaction method. Advantages of this method include simple procedures, inexpensive equipment, it does not need expensive vacuum system and high quality substrate. During the deposition process, the films were deposited onto soda lime glass under various anionic bath immersion times. The properties of the films were studied for the first time via field emission scanning electron microscopy (FESEM) and UV-visible spectrophotometer. Based on the FESEM analysis, uniform morphology could be observed for the sample produced for 30 seconds (anionic immersion time). The band gap was about 2.6 eV and the optical transmission increased in the visible region could be detected for these samples.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Effect of Bi Content on Optical Properties of Se-Sb-Bi Chalcogenide Amorphous...ijsrd.com
Se90-xSb10Bix (x=0, 2, 4, 6, 8 & 10) chalcogenide glasses were prepared by well-established melt quenching technique. The glassy nature was verified by X-ray diffraction (XRD). Thin films of these samples were deposited on glass substrate using thermal evaporation technique at room temperature. The transmission spectra of thin films have been taken using UV-VIS-NIR spectrophotometer (Varian Cary 500) in the wavelength range 200 nm to 1500 nm. The refractive index and film thickness are calculated by using envelope method proposed by Swanepoel. The results indicate that n increases with the increasing Bi content which is related to the increased polarizability of the larger Bi atomic radius 1.46 Å compared with the Se atomic radius 1.16 Å. The value of absorption coefficient (α) and hence extinction coefficient (k) has been determined from transmission spectra. Optical band gap (Eg) is estimated using Tauc's extrapolation and is found to decrease from 1.46eV to 1.24 eV with the Bi addition. This behavior of optical band gap is interpreted in terms of electronegativity difference of the atoms involved and cohesive energy of the system. The variation of optical band gap with Bi content has been studied. This study is aiming to examine such structures if they are employed as photonic devices such as photo-detectors, LED's and optical switches.
A Review of Zinc-Oxide as Nano Materials and Devicesidescitation
This paper presents a review of zinc oxide (ZnO) as
nano material and device. ZnO has gained substantial interest
in the research area of wide band gap semiconductors due to
its unique electrical, optical and structural properties.
Recently, ZnO as nano material generates much interest
among researchers and technologists and have been used in
many devices such as UV photodetectors, light emitting diodes,
solar cells and transistors. Moreover, a brief overview on ZnO
recent advances on nanoparticles, nanowires and their
applications as devices are discussed and reviewed.
Studies on in-Doped Zno Transparent Conducting thin FilmsIJRESJOURNAL
ABSTRACT: In this manuscript we have investigated the influences of indium dopants on zinc oxide (ZnO) thin films regarding physico-chemical properties for application in modern conducting devices. As a starting material, Indium (III) chloride, and Zn(CH3COO)2⋅2H2O were used. The complex TSDC spectrum was obtained by submitting the sample to a constant electrical field Ep = 10M V/m during 2 min at a varing polarization temperature of Tmax = 1500C. A minimal sheet resistance with electrical resistivity as low in the range of 10-3 Ω·cm was found for this thin film.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
IOSR Journal of Electronics and Communication Engineering(IOSR-JECE) is an open access international journal that provides rapid publication (within a month) of articles in all areas of electronics and communication engineering and its applications. The journal welcomes publications of high quality papers on theoretical developments and practical applications in electronics and communication engineering. Original research papers, state-of-the-art reviews, and high quality technical notes are invited for publications.
This paper reports the effect of the different deposition methods towards the ZnO nanostructure crystal quality and film thickness on the polyimide substrate. The ZnO film has been deposited by using the spray pyrolysis technique, sol-gel and RF Sputtering. Different methods give a different nanostructure of the ZnO thin film. Sol gel methods, results of nanoflowers ZnO thin film with the thickness of thin film is 600nm. It also produces the best of the piezoelectric effect in term of electrical performance, which is 5.0 V and 12 MHz of frequency which is higher than other frequency obtained by spray pyrolysis and RF sputtering.
Dye Sensitized Solar Cells Incorporated with Tio2 -ZnO NanoparticlesScientific Review SR
We demonstrated an improvement in efficiency of Dye sensitized solar cells (DSSCs) decorated with
zinc oxide (ZnO) nanoparticles (NPs) through successive ionic layer adsorption and reaction (SILAR). A series of
ZnO with different SILAR cycles were synthesized on TiO
2 that has been pre-grown on fluorine tin oxide (FTO)
glass slides. The performance of DSSCs containing ZnO NPs was significantly affected. The photovoltaic (PV)
performance decreased with increasing number of SILAR cycles from two SILAR cycles to four SILAR cycles,
the best performance was achieved using the anodes prepared with two SILAR cycles. The best cell shows a
conversion efficiency (η) of 0.0064 %. The cell exhibits ~ 2.13 improvement over the performance (0.0030 %) of
bare FTO-based device. The related PV performance enhancement mechanism is discussed
Synthesis and characterization of zno thin films deposited by chemical bath t...eSAT Journals
Abstract ZnO thin films have been deposited on silica glass substrate using the chemical bath deposition technique. The precursors used were zinc chloride and aqueous ammonia. The solution was stirred continuously with the help of a magnetic stirrer at a bath temperature of 70 oC and a deposition time of 70 minutes. The elemental composition and the surface morphology were studied using energy dispersive and scanning electron microscopy. The band gap was 2.72, 2.66, 2.60 eV for as-deposited, annealed at 200 oC and 300 oC respectively. There was a red shift in the band gap energy as the annealing temperature was increased. This might be due to an improvement in the crystallinity of the ZnO thin films. Index Terms: Zinc oxide, chemical bath, band gap, annealing
EFFECT OF ZN CONCENTRATION ON STRUCTURAL AND OPTICAL PROPRIETIES OF ZNO THIN ...AEIJjournal2
ZnO thin film were deposited by spray pyrolysis on glass substrates, using zinc nitrate as precursor with
different molar concentrations varying from 0.05M to 0.2 M. To study the structural proprieties of the film ,
the different technique was used as the X-ray diffraction, atomic force microscopy (AFM), Raman
scattering , and FTIR . The optical properties were explored by transmission, reflectivity and
Photoluminescence techniques. The ZnO thin films obtained in this paper are polycrystallines, the grain
size increases when the molar concentration of Zn precursor was increasing. The films are transparent in
visible region, this transmission values decreases when the molar concentration increase caused by the
increasing of surface roughness
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
An Investigation of SILAR Grown Cobalt Selenide Thin Films IIJSRJournal
Nowadays, several deposition techniques have been used to produce thin film materials. The obtained films were characterized by using different tools. These semiconductor materials could be employed in solar cell, laser devices and opto-electronic devices. The main objective of this work is to produce cobalt selenide thin films through successive ionic layer adsorption and reaction method. Advantages of this method include simple procedures, inexpensive equipment, it does not need expensive vacuum system and high quality substrate. During the deposition process, the films were deposited onto soda lime glass under various anionic bath immersion times. The properties of the films were studied for the first time via field emission scanning electron microscopy (FESEM) and UV-visible spectrophotometer. Based on the FESEM analysis, uniform morphology could be observed for the sample produced for 30 seconds (anionic immersion time). The band gap was about 2.6 eV and the optical transmission increased in the visible region could be detected for these samples.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Effect of Bi Content on Optical Properties of Se-Sb-Bi Chalcogenide Amorphous...ijsrd.com
Se90-xSb10Bix (x=0, 2, 4, 6, 8 & 10) chalcogenide glasses were prepared by well-established melt quenching technique. The glassy nature was verified by X-ray diffraction (XRD). Thin films of these samples were deposited on glass substrate using thermal evaporation technique at room temperature. The transmission spectra of thin films have been taken using UV-VIS-NIR spectrophotometer (Varian Cary 500) in the wavelength range 200 nm to 1500 nm. The refractive index and film thickness are calculated by using envelope method proposed by Swanepoel. The results indicate that n increases with the increasing Bi content which is related to the increased polarizability of the larger Bi atomic radius 1.46 Å compared with the Se atomic radius 1.16 Å. The value of absorption coefficient (α) and hence extinction coefficient (k) has been determined from transmission spectra. Optical band gap (Eg) is estimated using Tauc's extrapolation and is found to decrease from 1.46eV to 1.24 eV with the Bi addition. This behavior of optical band gap is interpreted in terms of electronegativity difference of the atoms involved and cohesive energy of the system. The variation of optical band gap with Bi content has been studied. This study is aiming to examine such structures if they are employed as photonic devices such as photo-detectors, LED's and optical switches.
A Review of Zinc-Oxide as Nano Materials and Devicesidescitation
This paper presents a review of zinc oxide (ZnO) as
nano material and device. ZnO has gained substantial interest
in the research area of wide band gap semiconductors due to
its unique electrical, optical and structural properties.
Recently, ZnO as nano material generates much interest
among researchers and technologists and have been used in
many devices such as UV photodetectors, light emitting diodes,
solar cells and transistors. Moreover, a brief overview on ZnO
recent advances on nanoparticles, nanowires and their
applications as devices are discussed and reviewed.
Studies on in-Doped Zno Transparent Conducting thin FilmsIJRESJOURNAL
ABSTRACT: In this manuscript we have investigated the influences of indium dopants on zinc oxide (ZnO) thin films regarding physico-chemical properties for application in modern conducting devices. As a starting material, Indium (III) chloride, and Zn(CH3COO)2⋅2H2O were used. The complex TSDC spectrum was obtained by submitting the sample to a constant electrical field Ep = 10M V/m during 2 min at a varing polarization temperature of Tmax = 1500C. A minimal sheet resistance with electrical resistivity as low in the range of 10-3 Ω·cm was found for this thin film.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
IOSR Journal of Electronics and Communication Engineering(IOSR-JECE) is an open access international journal that provides rapid publication (within a month) of articles in all areas of electronics and communication engineering and its applications. The journal welcomes publications of high quality papers on theoretical developments and practical applications in electronics and communication engineering. Original research papers, state-of-the-art reviews, and high quality technical notes are invited for publications.
Design analysis and Commissioning Of High Mast Lighting PolesIOSR Journals
Along a major highway, luminaire pole structures may be seen every 101 of a mile.From documented
cases, it appears that these structures started to experience fatigue problems in the last three decades. The
general public might not be aware of the problem, because if such a failure occurs, the structure is replaced.
Those working in the fatigue area realize that this issue is a serious matter[15][16]. Clearly, the damage is
costly, costing up to thousands of dollars per occurrence. For this purpose, a high mast lighting poles are
fabricated using steel due to its high strength, ductilityproperty and wear resistance. The high mast structure
(HMS) has the characters of light weight and high cost efficiency. It possess large ratio of height (H) to least
horizontal dimension (D) that makes it more slender and wind-sensitive than any other structures[17].
Therefore, the purpose of this research is to design optimal high mast poles taking into account its specification,
environmental conditions for placement and economy. Initially, among various pole designs, the high mast pole
is considered to be in tapered section as it is more reliable and economical. Then, analysis is performed in solid
works by keeping the base section to be fixed and applying compressive load on the top section of the pole due
to heavy weight of cantilever mast arm and luminaire. This project illustrates the theoretical basis and the
analytical development of the high mast lighting poles
Effect of Zn Concentration On Structural and Optical Proprieties Of ZNO Thin ...AEIJjournal2
ZnO thin film were deposited by spray pyrolysis on glass substrates, using zinc nitrate as precursor with
different molar concentrations varying from 0.05M to 0.2 M. To study the structural proprieties of the film ,
the different technique was used as the X-ray diffraction, atomic force microscopy (AFM), Raman
scattering , and FTIR . The optical properties were explored by transmission, reflectivity and
Photoluminescence techniques. The ZnO thin films obtained in this paper are polycrystallines, the grain
size increases when the molar concentration of Zn precursor was increasing. The films are transparent in
visible region, this transmission values decreases when the molar concentration increase caused by the
increasing of surface roughness
Influence of Thickness on Electrical and Structural Properties of Zinc Oxide ...paperpublications3
Abstract: Zinc Oxide (ZnO) thin films were prepared on corning (7059) glass substrates at a thickness of 75.5 and 130.5nm by RF sputtering technique. The deposition was carried out at room temperature after which the samples were annealed in open air at 1500C. The electrical and structural properties of these films were studied. The electrical properties of the films were monitored by four-point probe method while the structural properties were studied by X-ray diffraction (XRD). It was found that the electrical resistance of the films decreases with increase in the thickness of the films. The XRD analysis of the films showed that the films have a peak located at 〖34.31^0-34.35〗^0with hkl (002). Other parameters calculated include the stress ( ) and the grain size (D).
Un doped and doped with Al ZnS thin Films have been fabricated by vacuum evaporation
technique under the vacuum of 10-5 Torr on glass substrate at room temperature and with different
ratio of Al concentration of thickness (0.8µm). The optical properties were revealed by UV-Visible
transmittance spectra and the band gap energy was determined. Transmission spectra indicate a high
transmission coefficient (¨95%). The results showed that films have direct optical transition, and the
values of energy gap were found to decrease with doping concentrations. Also the optical constants
such as absorption coefficient, refractive index, extinction coefficient and dielectric constant have
been calculated. The effect of doping concentration on the electrical properties has been studied
Detecting of NH3, CO2 polluted gases by using ZnO- In2O3 thin filmsijceronline
International Journal of Computational Engineering Research (IJCER) is dedicated to protecting personal information and will make every reasonable effort to handle collected information appropriately. All information collected, as well as related requests, will be handled as carefully and efficiently as possible in accordance with IJCER standards for integrity and objectivity.
Detecting of NH3, CO2 polluted gases by using ZnO- In2O3 thin filmsijceronline
International Journal of Computational Engineering Research (IJCER) is dedicated to protecting personal information and will make every reasonable effort to handle collected information appropriately. All information collected, as well as related requests, will be handled as carefully and efficiently as possible in accordance with IJCER standards for integrity and objectivity.
An Research Article on Fabrication and Characterization of Nickel Oxide Coate...ijtsrd
In this paper we have produced NiO thin film based solar cells. The NiO thin film was then studied for their structural, optical and electrical properties. By the help of these results we have capable to know about the structure of NiO the phase purity of the thin film X ray diffraction XRD pattern of NiO showed the diffraction planes corresponding to cubic phase respectively. The optical properties showed that with the increase in the deposition time of NiO the energy band gap varied between 3.1 to 3.24 eV. In the end, IV characteristics of the thin films were obtained by the help of matlab in the presence of light as will as dark region. Vijay Aithekar "An Research Article on Fabrication and Characterization of Nickel Oxide Coated Solar Cell" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-3 | Issue-5 , August 2019, URL: https://www.ijtsrd.com/papers/ijtsrd25300.pdfPaper URL: https://www.ijtsrd.com/physics/nanotechnology/25300/an-research-article-on-fabrication-and-characterization-of-nickel-oxide-coated-solar-cell/vijay-aithekar
The Evaluation of p-type doping in ZnO taking Co as dopantIOSR Journals
P-type doping is excessively difficult in wide-band gap semiconductors, such as GaN, ZnSe, and
indeed ZnO. Practically it is very difficult to obtain stable and true p-type ZnO. Under standard conditions there
are reports on decaying or even completely absent p-type conductivity. Several hypotheses have been
formulated to explain this unusual behaviour. The commonly accepted theory is that the elements assume
undesired (non-substitutional) positions or form complexes, resulting in self-compensation of the p-type
conductivity. Note that p-dopants can be compensated by low energy native defects, such as Zni or VO, or
background impurities, such as aforementioned H. Deep impurity levels can cause significant resistance to the
formation of a shallow acceptor level. In this work the p-type doped Zno based samples are prepared where
incorporation of Co into the ZnO crystal lattice is done and various measurements like Sheet resistivity, Hall
Voltage, Hall mobility and 2d hole concentration are made. From the results it has been clearly found that the
p-type doping takes place successfully and can be used for various future applications
Improvement Structural and Optical Properties of ZnO/ PVA Nanocompositesiosrjce
IOSR Journal of Applied Physics (IOSR-JAP) is a double blind peer reviewed International Journal that provides rapid publication (within a month) of articles in all areas of physics and its applications. The journal welcomes publications of high quality papers on theoretical developments and practical applications in applied physics. Original research papers, state-of-the-art reviews, and high quality technical notes are invited for publications.
Significance of substrate temperatures on the deposition of ZnGa2Se4 thin fil...IRJET Journal
https://irjet.net/archives/V4/i3/IRJET-V4I352.pdf
Similar to Effect of substrate temperature on the morphological and optical properties of nanocrystalline ZnO films formed by DC magnetron sputtering (19)
The increased availability of biomedical data, particularly in the public domain, offers the opportunity to better understand human health and to develop effective therapeutics for a wide range of unmet medical needs. However, data scientists remain stymied by the fact that data remain hard to find and to productively reuse because data and their metadata i) are wholly inaccessible, ii) are in non-standard or incompatible representations, iii) do not conform to community standards, and iv) have unclear or highly restricted terms and conditions that preclude legitimate reuse. These limitations require a rethink on data can be made machine and AI-ready - the key motivation behind the FAIR Guiding Principles. Concurrently, while recent efforts have explored the use of deep learning to fuse disparate data into predictive models for a wide range of biomedical applications, these models often fail even when the correct answer is already known, and fail to explain individual predictions in terms that data scientists can appreciate. These limitations suggest that new methods to produce practical artificial intelligence are still needed.
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Effect of substrate temperature on the morphological and optical properties of nanocrystalline ZnO films formed by DC magnetron sputtering
1. IOSR Journal of Applied Physics (IOSR-JAP)
e-ISSN: 2278-4861.Volume 7, Issue 1 Ver. II (Jan.-Feb. 2015), PP 50-54
www.iosrjournals.org
DOI: 10.9790/4861-07125054 www.iosrjournals.org 50 | Page
Effect of substrate temperature on the morphological and optical
properties of nanocrystalline ZnO films formed by DC magnetron
sputtering
Yasmeen Z. Dawood*, Salah Qaduri Hazaa, Saba Jameel Hasan,
Najiba Abdullah Hasan
* University of Al- Mustansiriya, Collage of Education, Baghdad, Iraq.
Abstract: Zinc oxide (ZnO) thin films were formed by DC magnetron sputtering onto glass substrates held at
different temperature. The temperature of the substrate was in the range 473 – 673 K. The temperature
dependence, morphological and optical properties of ZnO films were systematically investigated. Atomic force
microscopic analysis revealed that the growth of nanostructure in all the films. The root mean square roughness
of the films increased from 0.61 to 3.83 nm in the substrate temperature range of investigation. The average
optical transmittance of the films was about 78 % in the visible region. The optical band gap of the ZnO films
decreased from 3.349 to 3.357 eV with increase of substrate temperature 473-673 K respectively and have a
direct-transition type.
Key words: Zinc oxide, transparent conducting oxide, DC magnetron sputtering, optical transmission and
structure properties.
I. Introduction
Zinc Oxide (ZnO) is an attractive semiconducting material due to its promising properties of high electrical
conductivity and good optical transparency. It has advantages of nontoxicity, low cast and abundance of raw
material with high stability. ZnO was found various technological applications such as solar cells [1, 2], active
material for highly sensitive humidity and oxygen gas sensors [3], transparent electrodes for flat –panel displays
[4], p-n junction diodes, UV photodetectors [5] and ultraviolet light emitting diodes [6]. In the recent years, the
novel ZnO nanostructures are reported to have potential applications for optical emission, catalysis, sensing,
actuation, and drug delivery. The increase in surface area and the quantum confinement effects have made
nanostructure materials are quite distinct from their bulk form in both electrical and optical properties. Various
one-dimensional structures of ZnO, such as nanowires, nanorods, and nanobelts, have attracted much attention
[7-9].
ZnO thin films have been grown by various deposition techniques such as thermal oxidation of zinc [10],
chemical bath deposition [11], spray pyrolysis [12], sol-gel process [13], electron beam evaporation [14], pulsed
laser deposition [15], metal organic chemical vapor deposition [16], and DC [8, 17, 18] and RF [1, 2] magnetron
sputtering a. The physical properties of the formed films depend on the deposition method employed and
process parameters maintained during the growth of the films. Among these deposition techniques, magnetron
sputtering is industrially adopted thin films preparation method because of the advantages in the generation of
uniform and large area films. The physical properties of the sputtering films depends mainly on the process
parameters such as oxygen partial pressure, sputter power, substrate temperature, substrate bias, thickness and
post deposition annealing [3].
The properties of sputtered ZnO thin films are known to depend on deposition parameters such as r.f. power,
substrate temperature, type of substrate, pressure, gas atmosphere and thickness. Therefore, when one attempts
to grow ZnO films of high quality by using r.f. sputtering, it is necessary simultaneously consider both defect
formation and film growth behavior in optimizing ambient O2 pressure in the growth chamber[3, 4].
ZnO has a strong potential for various short-wavelength optoelectronic device applications. However, to realize
these applications, a reliable technique for fabricating high quality ptype ZnO and p-n junction needs to be
established. Compared with other II-VI semiconductor and GaN, it is a major challenge to dope ZnO to produce
p-type semiconductor due to self-compensation from native donor defects and/or hydrogen incorporation. Great
efforts have been made to achieve p-type ZnO by mono-doping group-I elements(Li, Na and K), group-IB
elements(Ag and Cu) or group-V elements (N, P, As, and Sb) and co-doping III–V elements with various
technologies, such as evaporation/sputtering process, ion implantation, pulsed laser deposition, thermal diffusion
of As after depositing a ZnO film on GaAs substrate, and hybrid beam deposition [7, 18].
In the present investigation, ZnO films with various substrate temperatures in the range 473 – 673 K by using
DC magnetron sputtering techniques. The effect of substrate temperature on the morphological and optical
properties of ZnO films was systematically studied and reported the results.
2. Effect of substrate temperature on the morphological and optical properties of nanocrystalline ….
DOI: 10.9790/4861-07125054 www.iosrjournals.org 51 | Page
II. Experimental work
The ZnO thin films were prepared by using DC- magnetron sputtering source Edwards 306 pumping system.
The sputtering condition are : Target- anode distance (30)cm , substrate type (glass), substrate temperature in the
range 473-673 K, magnetic field 760G, DC power gas pressure 7×10-2
Torr and at atmosphere of argon 100%.
ZnO thin films were prepared by DC reactive magnetron sputtering process. The metal ZnO target (99.9%
purity, 60mm diameter and 2mm thickness) is fixed on a magnetron-effect cathode, Glass was used as substrate.
The distance between the target and the substrate was 30mm. The vacuum chamber was evacuated using a
turbomolecule pump to 6×10-2
Torr before deposition. The target was cleaned by sputtering with power of 50W
for 10min with pure Ar atmosphere at the same time the substrate was covered with the shield. The following
sputter conditions were used in this work: DC power of 50W, the Substrate temperature (Ts) was 473- 673 K.
The parameters of the films were prepared by sputtering on glass substrates were show in table 1.
Table 1: Deposition parameters for the growth of ZnO films
Sputter target ZnO
Target to substrate distance 60 mm
Base pressure 2x10-4
Torr
Sputter pressure 5 Pa
Sputter power 50 W
Substrate temperature 473, 513, 573 and 673 K
III. Results and discussion
The optical transmittance spectra in the wavelength range of 200 to 900 nm of ZnO films deposited at different
substrate temperatures are shown in Figure 1. The films deposited at 473K have relatively higher transparency,
and small shoulders were observed in the absorption line. However, the images still exhibit an average
transmittance of above 77%. The film formed at 573K was relatively lower than the spectral transmittance for
the other films prepared at other growth temperatures; moreover, the average transmittance in the visible region
was above 70%. The reason for this is that the film was fabricated with a high degree of crystallinity, as
indicated in Figure 1. The optical transmittance was also decreased along with the increase in substrate
temperature to 513 K. The shift in the absorption line towards a higher energy side can also be attributed to the
increase in substrate temperature [6].
Sharp absorption edge was observed at the wavelength of about 390 nm and shifted towards higher wavelengths
side with increase of substrate temperature range of investigation. The optical absorption coefficient (α) was
calculated from the film thickness (t) and optical transmittance data using the relation [8, 12]:
α = (1/t) ln T …………..1
Figure 2 shows the plot of (ahν)2
versus hν, where a is the optical absorption coefficient, and hν is the energy of
the incident photon. The optical band gap (Eg) is calculated from the following expression by assuming a direct
transition between valance and conduction bands [4, 17]:
αhv = A(hv − Eg)1 2
……………… 2
where A is a constant, and Eg is estimated by extrapolating the straight-line portion of the spectrum to a zero
absorption coefficient value. The optical band gap of the film deposited at 473Kwas 3.356 eV. As the growth
temperature increased from 473K to 513K, the optical band gap shifted from 3.356to 3.357 eV. The band gaps
at the film formed at 573K (Eg = 3.350 eV). The band gap of the film also decreased with the temperature up to
673K (Eg = 3.349 eV). These results indicate that an increase in the substrate temperature improves the band
gap energy of the films at 513K substrate temperature as shown in table 2.
Fig. 1: Optical transmittance spectra of ZnO thin film on fused quartz glass.
3. Effect of substrate temperature on the morphological and optical properties of nanocrystalline ….
DOI: 10.9790/4861-07125054 www.iosrjournals.org 52 | Page
Fig. 2: Plot of (ahν)2
vs. photon energy (hν) for ZnO films grown at various substrate temperatures
The refractive index n and extinction coefficient k of ZnO film on glass substrate as a function of photon energy
were shown in Figure 3 and 4. In Figure 3, the refractive index of ZnO thin film increases as the photon energy
increase in the range of 0.5eV to 3.1eV (normal dispersion). The extinction coefficient k increase as photon
energy increases and it is very small at low energy part, where the film is transparent. The extinction coefficient
(k) of the films was also calculated by using the relation [10, 14]:
n =
1+R
1−R
+
1+R
1−R
2
− (k2
− 1)
1 2
……………3
k =
αλ
4π
…………. 4
The extinction coefficient of the ZnO films first increased from 0.0042 to 0.006 with increase of substrate
temperature from 473K to 513K thereafter decreased to 0.005 at high temperature about 673K (Fig. 3), as
shown in the Table 2.
Fig. 3: Variation of refractive index with photon energy.
4. Effect of substrate temperature on the morphological and optical properties of nanocrystalline ….
DOI: 10.9790/4861-07125054 www.iosrjournals.org 53 | Page
Fig. 4: Variation of extinction coefficient with photon energy.
Table 2: Optical and structure parameters of ZnO thin films.
Temperature
(K)
Optical band gap (eV) Transmittance % Extinction
coefficient
473 3.356 78 42×10-4
513 3.357 74 60×10-4
573 3.350 68 56×10-4
673 3.349 70 50×10-4
The three dimensional AFM images taken at a Fig. 3, represent the surface morphology of the ZnO thin films.
After acquiring the AFM images, they were subjected to a flattening procedure using the NOVA image
processing software. According to a quantitative analysis of the roughness deduced from AFM measuring
(Table 2), the values of average roughness (Ra), root mean square (RMS) and coefficients of kurtosis (RKU)
changed in relation to the substrate temperature. The films are uniform, dense and well packed between
particles. The films deposited at various substrate temperatures show the columnar structure and the particles are
arranged uniformly.
The AFM topography of the as-deposited at 573 K revealed that the film surface is rather smooth and compact
(Fig. 5 c). A significant difference occurs at temperature of 473K where the film surface exhibits a higher
roughness and clear grains can be seen (Fig. 5 a,b).
The atomic force microscopy was used to determine average size of the grains nucleated in the ZnO films as
show in table 3, it show that the film have lower value of grain size was 82nm at 473 K (substrate temperature)
. For the substrate temperature 513K the root mean square roughness (RMS) has lower value was 0.61 nm. With
increase of substrate temperature to 573 K the RMS roughness is gradually increased to 1.91 nm. The increase
of RMS with the increase of film substrate temperature was due to the larger size grains formation as well as
increase in the porosity of the films [39]. [28]. The increase of RMS of ZnO films leads significant effect on the
industrial applications such as gas sensors.
Table 3: Structure parameters of ZnO thin films.
Temperature (K) Grain size
(nm)
RMS
(nm)
Roughness (nm) Peak-peak (nm)
473 82 3.88 3.28 15.4
513 88 0.52 0.52 2.68
573 98 1.46 1.46 10.9
673 111 2.51 2.51 24.5
a b
5. Effect of substrate temperature on the morphological and optical properties of nanocrystalline ….
DOI: 10.9790/4861-07125054 www.iosrjournals.org 54 | Page
c d
Fig. 5: AFM studies on deposited ZnO thin films at different substrate temperature a)473K, b)513K, c)573K
and d)673K showing different structure.
IV. Conclusion
The substrate temperature dependence of morphological and optical properties of nanocrystalline ZnO
films deposited by DC magnetron sputtering on glass was systematically studied. The grain size was 22nm and
the roughness was increase by increasing the substrate temperature reach to 573 K. The optical studies revealed
the maximum transmittance of 78 % found in substrate temperature 513K. The optical band gap of ZnO films
decreased from 3.355 to 3.350 eV with increase of substrate temperature from 537 to 673 K.
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