Crystallography Orientation
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Crystallography orientations of Silicon wafers (<100> and <110>) with different primary flats, the positions of <111> planes, and the visualization of etching profiles in crystal level.
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Epitaxial deposition is a method for growing high quality crystalline films on crystalline substrates. There are two main types: homoepitaxy, where the film and substrate are the same material, and heteroepitaxy, where they differ. Key parameters that affect the epitaxial growth process include temperature, pressure, and reactant flow. Common techniques include vapor phase epitaxy, liquid phase epitaxy, and molecular beam epitaxy, each with their own advantages and disadvantages for producing films for semiconductor and optoelectronic devices.
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This document discusses plastic deformation in single and polycrystalline materials. It describes how plastic deformation occurs through mechanisms like slip and twinning. Slip involves the sliding of crystal planes relative to one another, while twinning involves a symmetrical rearrangement of atoms in a crystal. The document also discusses dislocations, which are line defects that allow slip to occur in crystals by moving and multiplying. Different crystal structures like body-centered cubic, face-centered cubic, and hexagonal close-packed deform through different combinations of slip systems involving dislocations. Strengthening mechanisms that impede dislocation motion are also mentioned.
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The document discusses the process of manufacturing single crystal silicon ingots for use in semiconductor chips. Raw silicon is obtained from sand and purified to electronic grade silicon. Single crystals are formed using techniques like the Czochralski method, where a silicon seed crystal is pulled slowly from a melt of purified silicon. This allows the silicon atoms to align uniformly and form a single crystal ingot. The ingots are sliced into thin wafers that serve as the base material for etching circuits onto semiconductor chips.
Defects in crystal
[1] Crystal defects are irregularities in the structure of a crystal that arise from imperfect packing of atoms. There are several types of crystal defects including point defects, line defects, surface defects, and volume defects.
[2] Point defects are zero-dimensional and include vacancies, interstitial defects, Schottky defects, and Frenkel defects. Line defects are one-dimensional and include edge and screw dislocations. Surface defects are two-dimensional and include grain boundaries, twin boundaries, and stacking faults. Volume defects are three-dimensional voids or non-crystalline regions within the crystal structure.
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Ion implantation is a technique for doping semiconductors by accelerating ions to high energies and bombarding a wafer with them. During implantation, the wafer is kept at ambient temperature to prevent diffusion. However, a post-implant annealing step above 900°C is required to repair damage to the wafer's crystal structure caused by nuclear collisions with ions. Ion implantation offers more control over dopant dose and depth profile than diffusion and allows for precise doping of semiconductors.
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This document discusses various types of defects that can occur in crystal structures, categorizing them based on dimensionality. Point defects are irregularities around a single atom and include vacancies, interstitials, Frenkel defects, and Schottky defects. Line defects distort atomic bonds around a dislocation line and include edge and screw dislocations. Surface defects occur at grain boundaries where crystal orientations change. Bulk defects in the volume of the material include precipitates, dispersants, inclusions, and voids. Defects can impact material properties and are sometimes deliberately introduced to improve characteristics.
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My Use of Digital Communication
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45 Second Promotional Video
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A blog is a discussion or informational website published on the World Wide Web consisting of discrete posts displayed in reverse chronological order. The document discusses different types of blogs including instructional, informational, reviews, lists, interviews, and others. Blogs can be used for various purposes such as public opinion and discussion, providing current information, promoting products, sharing information, and education. The document references several sources for information on blogs.
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- 1. Omid Adljuy (omid.adljuy@ieee.org) Faculty of Electrical and Computer Engineering University of Tabriz, Tabriz, Iran Dec. 2011
- 2. Contents Brief Review of Si Crystallographic Planes Possible Types of Si Wafers <100> Wafer ( Primary Flat : <110> ) Different Views <111> Planes Mask Openings for Etching More Details in Crystal Level <110> Wafer ( Primary Flat : <100> ) Different Views <111> Planes Mask Openings for Etching More Details in Crystal Level 2
- 3. Crystal Planes of Silicon z z z y x (100) y y x (110) x (111) 3 MEMS Course Dr Steve Beeby
- 4. Possible Types of Si Wafers <100> Wafer Primary Flat : <100> Primary Flat : <110> Primary Flat : <111> <110> Wafer Primary Flat : <100> Primary Flat : <110> Primary Flat : <111> <111> Wafer Primary Flat : <100> Primary Flat : <110> Primary Flat : <111> dfg OK OK dfg OK OK OK dfg OK 4
- 5. <100> Wafer ( Primary Flat : <110> ) 5
- 14. <100> Wafer Etched Feature 14
- 15. <100> Wafer Etched Feature 15
- 20. <110> Wafer ( Primary Flat : <100> ) 20
- 22. <110> Wafer 22
- 35. <110> Wafer Etched Feature 35
- 36. <110> Wafer Etched Feature 36
- 37. <110> Wafer Etched Feature 37
- 38. <110> Wafer Etched Feature 38
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