CR018_CDF_Usage.ppt

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TSMC C018RF PDK usage guide:
An introduction on the usage of TSMC
process design kits (PDK)
PDK Version: v1.3d 2005/12/31

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TSMC C018RF PDK Usage Guide
 Introduction:
 This document describes the TSMC process design kits (PDK) parameterized cell (Pcell)
software, which provides a graphical user interface that lets user create parameterized cells for
placement in design layout.
 It is assumed that the user is familiar with the development and design of integrated circuits and
with the cadence Virtuoso Layout Editor.
 All the information and data contained hereunder constitute TSMC's proprietary and confidential
information. Unless TSMC agrees otherwise in writing, you can only use the information
contained herein for evaluation purpose. Further, you should treat the information as
confidential information and exercise due care to prevent its disclosure to any persons, provided
you may disclose it to your employees on a need to know basis in case they agree to similar
duty of confidentiality to protect the information herein. You cannot disclose such information to
any third party unless TSMC agrees in advance by writing. However, requirements hereunder
shall not serve to supersede or change any existing contracts regulating similar issues between
you and TSMC.

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 Overview:
 The Symbol Display Information.
This section describes the symbol display information include four terminal NMOS symble, four terminal
PMOS symbol, three terminal NMOS symbol, three terminal PMOS symbol, three terminal npn BJT symbol,
three terminal pnp BJT symbol, two terminal diode symbol, two terminal resister symbol, three terminal
resister symbol and two terminal varactor symbol.
 Device Table
This section show the total device in this PDK. The user can check the page number in the device table
to find out the CDF parameter and Pcell function.
 MOS Parameterized Cell Function Introduction
 BJT Parameterized Cell Function Introduction
 Diode Parameterized Cell Function Introduction
 Resistance Parameterized Cell Function Introduction
 Inductor Parameterized Cell Function Introduction
 Varactor Parameterized Cell Function Introduction
 Capacitor Parameterized Cell Function Introduction
 CDF Parameter Description
 Appendix
Appendix A – Abutment
Appendix B – Stretch Handles
Appendix C – AS AD PS PD NRS NRD

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 The Symbol Display Information:
 The following figure shows the symbol for a NMOS that list as below:
Device instance name
Model name
Channel width
The net name that
connect to B terminal
Channel length
Numbers of poly fingers
Numbers of parallel
devices
nmos2v, nmos2v_mis, nmos2vdnw, nmosmvt2v, nmosnvt2v.
Device name
The net name that
connect to D terminal
The net name that
connect to G terminal
The net name that
connect to S terminal

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 The following figure shows the symbol for a NMOS that list as below:
nmos3v, nmos3v_mis, nmos3vdnw, nmosnvt3v, nmosmvt3v.
Model name
Channel width
The net name that
Channel length
Numbers of parallel
devices
Device name
The net name that
The net name that
The net name that

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 The following figure shows the symbol for a PMOS that list as below:
Model name
Channel width
The net name that
Channel length
Numbers of parallel
devices
Device name
The net name that
The net name that
The net name that
pmos2v, pmos2v_mis, pmosmvt2v.

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 The following figure shows the symbol for a PMOS that list as below:
Model name
Channel width
The net name that
Channel length
Numbers of parallel
devices
Device name
The net name that
The net name that
The net name that
pmos3v, pmos3v_mis.

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 The following figure shows the symbol for a RF NMOS that list as below:
Model name
Total width
The net name that
Channel width
Numbers of parallel
devices
rfnmos2v, rfnmos2v_mis.
Device name
The net name that
The net name that
The net name that
Channel length

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 The following figure shows the symbol for a RF NMOS that list as below:
Model name
Total width
The net name that
Channel width
Numbers of parallel
devices
rfnmos3v, rfnmos3v_mis.
Device name
The net name that
The net name that
The net name that
Channel length

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 The following figure shows the symbol for a RF PMOS that list as below:
Model name
Total width
The net name that
Channel width
Numbers of parallel
devices
rfpmos2v, rfpmos2v_mis, rfpmos2v_nw, rfpmos2v_nw_mis.
Device name
The net name that
The net name that
The net name that
Channel length

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 The following figure shows the symbol for a RF PMOS that list as below:
Model name
Total width
The net name that
Channel width
Numbers of parallel
devices
rfpmos3v, rfpmos3v_mis, rfpmos3v_nw, rfpmos3v_nw_mis.
Device name
The net name that
The net name that
The net name that
Channel length

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 The following figure shows the symbol for a npn BJT that list as below:
Model name
Emitter area
Numbers of parallel
devices
Device name
The net name that
connect to C terminal
The net name that
The net name that
connect to E terminal
npn.

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 The following figure shows the symbol for a pnp BJT that list as below:
Model name
Emitter area
Device name
The net name that
connect to E terminal
The net name that
The net name that
connect to C terminal
vpnp, vpnp3.
Numbers of parallel
devices

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 The following figure shows the symbol for a diode that list as below:
Model name
Diode area
dioden, diodep, dioden3v, diodep3v, diodenw, diodenw3v.
Device name
The net name that
connect to PLUS terminal
The net name that
connect to MINUS terminal
Numbers of parallel
devices

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 The following figure shows the symbol for a resister that list as below:
Model name
Resister width
Resister length
Total resistance
rm1, rm2, rm3, rm4, rm5, rmt.
Device name
The net name that
The net name that
Numbers of parallel
devices

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Model name
Total Resister
Resister length
rnhpoly, rnhpoly_dis, rnplus, rnlpoly, rnlpoly_dis, rnplus, rnwell, rnwod, rphpoly, rphpoly_dis,
rphripoly, rphripoly_dis, rpplus, rplpoly, rplpoly_dis, rpplus.
Device name
The net name that
The net name that
Numbers of parallel
devices
Resister width

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Model name
Resister width
Resister length
Total resistance
rphpoly_rf, rphripoly_rf, rplpoly_rf.
Device name
The net name that
The net name that
Numbers of parallel
devices
The net name that
connect to BULK terminal

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 The following figure shows the symbol for a capacitor that list as below:
Model name
Capacitor width
Capacitor length
mimcap, mimcap_rf.
Device name
The net name that
The net name that
Total capacitance
Numbers of parallel
devices
Contact Metal layer

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 The following figure shows the symbol for a capacitor that list as below:
Model name
Capacitor width
Capacitor length
nmoscap, pmoscap.
Device name
The net name that
The net name that
Total capacitance
Numbers of parallel
devices
The net name that

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 The following figure shows the symbol for a varactor that list as below:
Model name
Varactor length
jvar.
Device name
The net name that
The net name that
Total capacitance
Varactor width
Varactor Fingers
The net name that
Numbers of parallel
devices

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 The following figure shows the symbol for a Varactor that list as below:
Model name
mos_var, mos_var33.
Device name
The net name that
The net name that
Total capacitance
Varactor Fingers
Numbers of parallel
devices
The net name that
Numbers of group

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 The following figure shows the symbol for a Varactor that list as below:
Model name
mos_var_b, mos_var_b3.
Device name
The net name that
The net name that
Total capacitance
Numbers of parallel
devices
The net name that
Varactor Length
Varactor Width
Varactor Finger

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 The following figure shows the symbol for a Inductor that list as below:
Model name
Inductor radius
Inductor width
sprial_std (2T), sprial_sym (3T) , sprial_sym_ct (4T).
Device name
The net name that
Total inductance
Number of turns
Numbers of parallel
devices
The net name that
Inductor metal layer
The net name that
connect to CTAP terminal
(only display in sprial_sym_ct)
The net name that

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 The following figure shows the symbol for a Special device that list as below:
Model name
dio_dnwpsub, dio_pwdnw.
Device name
The net name that
The net name that
Diode perimeter
Numbers of parallel
devices
Diode area

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Categories Device Page
MOS
nmos2v, nmos2v_mis, nmos2vdnw, nmos3v, nmos3v_mis, nmos3vdnw,
nmosmvt2v, nmosmvt3v, nmosnvt2v, nmosnvt3v, pmos2v, pmos2v_mis,
pmos3v, pmos3v_mis, pmosmvt2v
RFMOS
rfnmos2v, rfnmos2v_mis, rfnmos3v, rfnmos3v_mis, rfpmos2v, rfpmos2v_mis,
rfpmos3v, rfpmos3v_mis
rfpmos2v_nw, rfpmos2v_nw_mis, rfpmos3v_nw, rfpmos3v_nw_mis
BJT npn, vpnp, vpnp3
Diode dioden, diodep, dioden3v, diodenw, diodenw3v, diodep3v.
Resistor(1) rm1, rm2, rm3, rm4, rm5, rmt
Resistor(2)
rnhpoly, rnhpoly_dis, rnlplus, rnlpoly, rnlpoly_dis, rnplus, rnwell, rnwod, rphpoly,
rphpoly_dis, rphripoly, rphripoly_dis, rplplus, rplpoly, rplpoly_dis, rpplus
Resistor(3) rphpoly_rf, rphripoly_rf, rplpoly_rf
Capacitor(1) mimcap, mimcap_rf
Capacitor(2) nmoscap, pmoscap
Varactors(1) jvar
Varactors(2) mos_var, mos_var33
Varactors(3) mos_var_b, mos_var_b3
Inductor ind_std, ind_sym, ind_sym_ct
Special(1) dio_dnwpsub, dio_pwdnw
 Device Table:
 The devices in this PDK are list as below table:
26
30
31
32
33
34
35
36
37
38
39
40
41
42

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 MOS Parameterized Cell Function Introduction:
 The schematic component description format (CDF) parameter in MOS are list as below:
Model name: Display Model name information.
Description: Display device description.
(These parameters can’t be modify in CDF form)
L (M): Channel length of the device.
W (M): Channel width of the device.
Total_width(M): Total channel width of this device, equal
to width x fingers.
Number of Fingers_(N): Numbers of poly fingers.
Total_m: Display numbers of parallel MOS device.
(This parameter can’t be modify in CDF form)
Multiplier: Numbers of parallel MOS device.
Check here for more information
Back to Device Table
Hard_constrain: This function provides an option to constrain
the value for each parameter in this device.
S D swap: Enable this function to swap source and drain terminal.
Next page

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 The schematic component description format (CDF) parameter in MOS are list as below:
Calc Diff Params: The switch provide to modify simulation
parameters.
Source_area: Source area (AS) - for simulate use.
Drain_area: Drain area (AD) - for simulate use.
Source_periphery: Source periphery (PS) - for simulate use.
Drain_periphery: Drain periphery (PD) - for simulate use.
NRS: Number of squares source resistance – for simulate use.
NRD: Number of squares drain resistance – for simulate use.
Front page

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 The layout component description format (CDF) parameter in MOS are list as below:
Next page
L (M): Channel length of the device.
W (M): Channel width of the device.
Total_width(M): Total channel width of this device, equal
to width x fingers.
Total_m: Display numbers of parallel MOS device.
S D swap: Enable this function to swap source and drain terminal.
Calc Diff Params: The switch provide to modify simulation
parameters.
Source_area: Source area (AS) - for simulate use.
Drain_area: Drain area (AD) - for simulate use.
Source_periphery: Source periphery (PS) - for simulate use.
Drain_periphery: Drain periphery (PD) - for simulate use.
NRS: Number of squares source resistance – for simulate use.
NRD: Number of squares drain resistance – for simulate use.
(These are the same parameter that in schematic CDF form)
(These are the same parameter that in schematic CDF form)

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 The layout component description format (CDF) parameter in MOS are list as below:
Front page
leftCnt: A option for drawing poly-left diffusion area metal1
connection.
RigthCnt: A option for drawing poly-right diffusion area metal1
connection. Check here for more information
bodytie_typeL: (None, Integred, Detached) A option for
drawing body connection.
bodytie_typeR: (None, Integred, Detached) A option for
drawing body connection.
routePolydir:(None, Top, Bottom, Both) A option for drawing
poly gate connection.
The function only appears when Number of fingers_(N) > 1
RigthCnt: A option for drawing inter-poly diffusion metal1
connection.
route_Source_Drain:(Source, Drain, Both) A option for
drawing source and drain connection.
fingers_SP_INC(M): The function is provided to modify poly
gate space.
Text size: The function can modify the font value in layout view.
Imp layer: The function provide a option for well implant.

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 RFMOS Parameterized Cell Function Introduction:
 The schematic component description format (CDF) parameter in RFMOS are list as below:
Total width(M): Total channel width of this device.
(These parameters can’t be modify in CDF form)
Width_per_Finger (M): Channel width of the device.
Length _per_Finger (M): Channel length of the device.
Create_Dummy_Poly: A option for draw dummy poly.
Create_Guard_Ring: A option to create guardring.
Create_Deep_Nwell: An option for create deep nwell.
(This option not support rfpmos2v_nw, rfpmos2v_nw_mis,
rfpmos3v_nw and rfpmos3v_nw_mis device)

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 BJT Parameterized Cell Function Introduction:
 The schematic component description format (CDF) parameter in BJT are list as below:
Model name: Display model name information.
(These parameter can’t be modify in CDF form)
EmitterSize: (2X2, 5X5, 10X10) Select the bjt dimension
in design layout.
EmitterArea: Display the bjt emitter area.
Estinated operation region: This function provides
for setup region in the netlist. - for simulate use

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 Diode Parameterized Cell Function Introduction:
 The schematic component description format (CDF) parameter in Diode are list as below:
Length_(M): Junction length of the device.
Width_(M): Junction Width of the device.
Diode_area: Display the diode area.
Diode peri: Display the diode periphery.
Multiplier: Numbers of parallel Diode device.

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 Resistance (1) Parameterized Cell Function Introduction:
 The schematic component description format (CDF) parameter in resistance are list as below:
Width(M): Device segment width.
Length(M): Device segment length.
Total resistance(ohms): Device resistance value.
LVS resistance (ohms) : Display resistor for LVS compare.
Rs(ohms/square): Display the device Rs value.
Res_update_method: (l_&_W, Res_&_W) Res update
method, please review segment width
and segment length function.

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 Resistance(2) Parameterized Cell Function Introduction:
Total resistance(ohms): Device resistance value.
Segment width(M): Device segment width.
Segment length(M): Device segment length.
Total width(M): Display the device segment width.
Total length(M): Display the device segment length.
Rs(ohms/square): Display the device Rs value.
Resistor connection: Device resistance value.
Number of segment: Device segment width.
Segment spacing(M): Device segment length.
Res_update_method: (l_&_W, Res_&_W) Res update
method, please review segment width
and segment length function.
Cont columns: Device contact columns number.

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 Resistance(3) Parameterized Cell Function Introduction:
Width(M): Device segment width.
Length(M): Device segment length.
Entry_method: (l_&_W, Res_&_W) Res update
method, it’s the same as resistance(1)
Res_update_method.
Resistance(OHMS): Device total resistance value.

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Create_Leading_terminals: A option to create
leading terminals.
Leading_terminals_Width(M): This parameter can be
modify in layout CDF form, use can modify the terminal width.
Leading_terminals_length(M): This parameter can be
modify in layout CDF form, use can modify the terminal length.
 Capacitor(1) Parameterized Cell Function Introduction:
 The schematic component description format (CDF) parameter in capacitor are list as below:
Multiplier: Numbers of parallel Capacitor device.
Entry_method: (l_&_W, _c_ , c_&_W) capacitor update
method.
Capacitance: Input Capacitor capacitance.
Width_(M): Input capacitor metal width.
Length_(M): Input capacitor metal length.

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 Capacitor(2) Parameterized Cell Function Introduction:
 The schematic component description format (CDF) parameter in capacitor are list as below:
Multiplier: Numbers of parallel Varactor device.
Capacitance: Input Capacitor capacitance.
Spec: (Capacitance, Cap & w , l & w) capacitor update
method.
l (M): Input capacitor length.
W (M): Input capacitor width.
Source diffusion area: AS parameter - for simulate use
Drain diffusion area: AD parameter - for simulate use
Source diffusion periphery: PS parameter - for simulate use
Drain diffusion periphery : PD parameter - for simulate use
CapA(F/M^2): Display the area capacitor.
CapP(F/M) : Display the periphery capacitor .
Width Per Finger: Display model name information.
Number of Fingers: Device finger numbers.

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 Varactor(1) Parameterized Cell Function Introduction:
 The schematic component description format (CDF) parameter in varactor are list as below:
Length_per_Finger(M): Device width.
Width _per_Finger(M): Device length.
Fingers_Number(M): Device finger numbers.
Capacitance(@V=0)(F): Display the capacitance value in 0V.
Cmin(@V=-vdd)(F): Display the capacitance value in –vdd
Cmax(@V=vdd)(F): Display the capacitance value in vdd
Total area: Device total area.
Total perl: Device total perl.
Enter mode: (finger, Width) To elect the method that
Input dimension.

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Cmin(@V=-vdd)(F): Display the capacitance value in –vdd
Cmax(@V=vdd)(F): Display the capacitance value in vdd
Fingers_per_Group(B): Device finger numbers.
Number_per_Group(G): Device group numbers.

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Finger_per_Group (B): Device width.

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 Inductor Parameterized Cell Function Introduction:
 The schematic component description format (CDF) parameter in Inductor are list as below:
Approx inductance(H): Display Approx inductance
device description
Inductor_Width(M): Inductor Metal line width.
Inner Radius(M): Cycle Inductor radius.
Number_Of_Turns: The turns number of the cycle inductor.
Inductor_Space: Display inductor space.

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 Special device Parameterized Cell Function Introduction:
 The schematic component description format (CDF) parameter in Diode are list as below:
Diode_area: Input the diode area.
Diode peri: Input the diode periphery.
Diode_area: Display the diode area.
Diode peri: Display the diode periphery.
Note: dio_dnwpsub and dio_pwdnw is provided to use when
LVS switch “DNW_DIODE” is enabled.

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CDF Parameter Description

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 The function of Number of Fingers_(N)
 This parameter provide user to increment the poly finger numbers.
Number of Fingers_(N)=1 Number of Fingers_(N) =3
Check here to back to MOS
Check here to back to RFMOS
Number of Fingers_(N)=8 Number of Fingers_(N) =12

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 The function of Multiplier
 This parameter provide user to increment the parallel device.
Multiplier = 1 Multiplier = 2
Check here to back to BJT
Check here to back to Diode
Check here to back to Resistance(1)
Check here to back to Varactor(3)
Check here to back to Inductor
Check here to back to Capacitor(1)

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 The function of Calc Diff Params
 It’s a switch for input simulation parameter that include area of source (AS), area of
drain (AD), periphery of source (PS), periphery of drain (PD), number of squares
source resistance (NRS), number of squares drain resistance (NRD) and LOD effect
parameter- SA and SB. Modify those parameters only influence simulation conditions,
the design layout will not have any different.
Parameters can’t be modify Parameters can be modify
Calc Diff Params is enable Calc Diff Params is disable

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 The function of leftCnt, RightCnt
 The function provide a option for drawing poly-left (right) diffusion area metal1 connect
leftCnt is enable leftCnt is Disable

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 The function of bodytie_typeL and bodytie_typeR
 The function provide a option for drawing body connection at the device left
(bodytie_typeL) or device right (bodytie_typeR).
bodytie_typeL is None bodytie_typeL is Integred bodytie_typeL is Detached

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 The function of routePolydir
 The function is provided to drawing poly gate connection. The space of poly gate
connection to the diffusion area can be modify by routeUPoly_SP_INC(M) and
routeDPoly_SP_INC(M) 2
.
The routeUPoly_SP_INC(M) and routeDPoly_SP_INC(M) only appear when routePolydir doesn't None.
2
PO.S.6(design rule)
+ routeDPoly_SP_INC
The poly Contacts will appear when routPolydir doesn’t
None. It is an option to draw contact on the poly gate.

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 The function of route_Source_Drain
 The function is provided to drawing source and drain connection.
route_Source_Drain is Both

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 The function of fingers_SP_INC(M)
 The function provide user to modify poly gate space. Fingers_SP_INC(M) is a increase
value, it’s not a distance between poly gate.
fingers_SP_INC(M) = 0 fingers_SP_INC(M) = 0.5

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 The function of Create_Dummy_Poly
 The function provide a option to drawing rfmos dummy poly.
Create_Dummy_Poly is enable Create_Dummy_Poly is disable

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 The function of Create_Guard_Ring
 The function provide a option to create RFMOS and RFresistance guardring.
Create_Guard_Ring is enable Create_Guard_Ring is disable
Check here to back to Resistance (3)

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 The function of Enable_outter_Ring
 The function provide a option to create RFMOS outer guardring.
Enable_outter_Ring is enable Enable_outter_Ring is disable

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Check here to back to BJT
 The function of BJT_type
 There are three dimension of pnp and npn are provided in this PDK, user can use this
function to choose those device layout.
BJT_type = 5X5 BJT_type = 10X10

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 The function of Total resistance(ohms), Segment width(M),
Segment length(M) and Res_update_method
 In the resistance cell, we provide user two kinds of input method – l_&_W and Rec_&_W to
modify the device resistance. When the user select l_&_W method, the input parameter will
be segment length(M) and segment width(M), the other one is total resistance(ohms) and
segment width(M).
select l_&_W method
select Rec_&_W method

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 The function of Resistor connection, Number of segment,
Segment spacing(M)
 Number of segment provide user a function to Increment the number of segment
resistance, user can use Resistor connection and Segment spacing(M) to modify
connection type – series or parallel and segment spacing.
Number of segment = 2
Resistor connection = series
Segment Spacing(M) = 2.4u
Number of segment = 2
Resistor connection = parallel
Segment Spacing(M) = 4.8u
Segment Spacing(M)

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Security C
P. 58
 The function of Cont columns
 This function provide user to modify the contact columns.
Cont columns= 1 Cont columns= 3

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Security C
P. 59
 The function of Fingers_Number(M)
 This function provide user to modify the device fingers Number.
Fingers_Number(M)= 8 Fingers_Number(M)= 4

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P. 60
 The function of Finger_per_Group (B) and Number_per_Group(G)
 This function provide user to modify the fingers Number and Group number, please review the
example.
Finger_per_Group (B) = 10
Number_per_Group(G) = 1

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Security C
P. 61
 The function of Entry_method, Capacitance, Length_(M) and
Width_(M).
 In the capacitor cell, we provide user three kinds of input method – l_&_W, _c_ and c_&_W to
modify the device capacitance.
select _c_ method
select c_&_w method
select l_&_w method

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Security C
P. 62
 The function of Entry_method, Length_(M) and Width_(M).
 In the capacitor cell, we provide user three kinds of input method – l_&_W, _c_ and c_&_W to
modify the device capacitance.
select _c_ method
select c_&_w method
select l_&_w method

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Security C
P. 63
 The function of Create_Leading_terminals.
 In the capacitor cell, we provide user a option to create leading terminals.
Create_Leading_terminals= Disable Create_Leading_terminals= Enable

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Security C
P. 64
 The function of Capacitance, Spec, l (M) and w (M).
 These parameter are used to modify capacitor dimension.
Spec= Capacitance Spec= Cap & w
Spec= l & w

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Security C
P. 65
Appendix

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Security C
P. 66
Device
Abutment type
Before Abutment
After Abutment
The view in schematic
 Appendix A - Abutment
 To make the user understand this function, we describe more details and examples
about abutment in this section. There are two point about this function is important, first
this function only support MOS device in this PDK, second there are the same type
MOS (ex: nch and nch_18, pch and pch_25) can be abutted only.
 When user abut two device, the terminal B must connects certainly in the layout view
so it must be connected to the same net in the schematic view.
 The system will auto determine abutment type of the both device. User can’t modify
abutment type.
 The same devices abut case as show in below :(Case Ⅰ)
nch (W=0.2u)
nch (W=0.2u)
Check here to back to ShareLeftShape

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P. 67
 Abutment ability lets you overlap two MOS, to create a connection between two sets
of shapes overlapping each other. The two sets of shapes must include pins
connected to the same net. (Case Ⅱ)
Device
Abutment type
Before Abutment
After Abutment
nch (W=0.2u)
nch (W=0.2u)

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P. 68
 This case show out the different width device have been abutted. (Case Ⅲ)
Device
Abutment type
Before Abutment
After Abutment
nch (W=0.4u)
nch (W=0.2u)

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Security C
P. 69
 This case show out that the same type MOS also can be abutted. (Case Ⅳ)
Device
Abutment type
Before Abutment
After Abutment
nch_25 (W=0.4u)
nch (W=0.2u)

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P. 70
Stretch Handles number Stretch direction
1
2
3, 5
4, 6
7, 8
9, 10
11
13
12
13
14
 Appendix B – Stretch Handles
 This function lets user graphically change the value of those parameter for Pcell
instances after user place them. The only one device MOS is a stretchable Pcell in this
PDK.
 The system default is not show out the stretch handles, user must be enable the
function manually. (Direct: in the layout view Options → Display option → Stretch
Handles )
1 2
3 4 5 6
7 8
9 10
11
12
13
↓
←
↑
→
←
→
→
←
↑
↓
↓
↑
14
←
→
↓ ↑

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P. 71
 A example to show out the stretch case when the user stretch the handle 12.
Select handle 11
and move up the
handle.
Release the handle
Width = 2.0u
Width = 3.0u
Width = 2.0u →3.0u

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Security C
P. 72
 Appendix C – AS AD PS PD NRS NRD
 In this section, we will description that the PDK how to calculate as, ad, ps, pd, nrs and nrd.
Case I
• Normal MOS with multi fingers
SG DG
i
CG _
2 
2

fingers
i
sWidth _ i
dWidth _ i
sWidth _
w
sWidth_i
S
i
total
Area 
 
1
_
w
dWidth_i
D
i
total
Area 
 
1
_
2
)
(
1
_ 


 

d
i
total
Peri N
w
dWidth_i
D
2
)
(
1
_ 


 

s
i
total
Peri N
w
sWidth_i
S
fingers
S
AS total
Area /
_

fingers
D
AD total
Area /
_

fingers
D
PD total
Peri /
_

fingers
S
PS total
Peri /
_

d
i
CG _
_
s
i
CG _
_
: CG_i in Drain diffusion area
: CG_i in Source diffusion area
)
_
(
_ s
SG
d
SG : SG in Drain(Source) diffusion area
)
_
(
_ s
DG
d
DG : DG in Drain(Source) diffusion area
w
fingers
s
DG
s
SG
s
i
CG
NRS
i
/
/
)
_
_
_
_
(
1


 

w
fingers
d
DG
d
SG
d
i
CG
NRD
i
/
/
)
_
_
_
_
(
1


 

W
Half contact width
s
N d
N
: Number of Source : Number of Drain

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P. 73
Case II
• Dog Bone MOS with multi fingers
SG
DG
i
CG _
2 
2

fingers
i
dogBoneW _
i
dWidth _
i
sWidth _
s
i
total
Area N
i
dogBoneW
i
dogBoneW
w
sWidth_i
S 



 

_
_
1
_
s
i
total
Peri N
i
dogBoneW
sWidth_i
S 



 

4
_
2
1
_
fingers
S
AS total
Area /
_

fingers
D
AD total
Area /
_

fingers
D
PD total
Peri /
_

fingers
S
PS total
Peri /
_

d
i
CG _
_
s
i
CG _
_
)
_
(
_ s
SG
d
)
_
(
_ s
DG
d
w
fingers
s
DG
s
SG
s
i
CG
NRS
i
/
/
)
_
_
_
_
(
1


 

w
fingers
d
DG
d
SG
d
i
CG
NRD
i
/
/
)
_
_
_
_
(
1


 

W
i
sWidth _
d
i
total
Area N
i
dogBoneW
i
dogBoneW
w
dWidth_i
D 



 

_
_
1
_
d
i
total
Peri N
i
dogBoneW
dWidth_i
D 



 

4
_
2
1
_
s
N d
N
Half dogBoneW_i

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Confidential
Security C
P. 74
Case III
• Normal MOS with multi fingers after abut
SG
DG
i
CG _
2 
3

fingers
i
dWidth _
i
sWidth _
w
dsWidth
sWidth_i
S
i
total
Area 

 
1
_ )
(
2
)
(
1
_ 



 

s
i
total
Peri N
w
dsWidth
sWidth_i
S
fingers
S
AS total
Area /
_

fingers
D
AD total
Area /
_
 fingers
D
PD total
Peri /
_

fingers
S
PS total
Peri /
_

d
i
CG _
_
s
i
CG _
_
)
_
(
_ s
SG
d
)
_
(
_ s
DG
d
w
fingers
s
DG
s
SG
s
i
CG
NRS
i
/
/
)
_
_
_
_
(
1


 

w
fingers
d
DG
d
SG
d
i
CG
NRD
i
/
/
)
_
_
_
_
(
1


 

W
Half contact width
dsWidth
w
ddWidth
dWidth_i
D
i
total
Area 

 
1
_ )
(
2
)
(
1
_ 



 

d
i
total
Peri N
w
ddWidth
dWidth_i
D
s
N d
N

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