The document is a device modeling report for a Toshiba diode, specifically the CRH01 rectifier. It includes detailed specifications, PSpice model parameters, and various circuit simulation results, including forward current characteristics, capacitance characteristics, and reverse recovery characteristics. The report emphasizes the accuracy of simulation results compared to measurements, with minimal error margins.

1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: CRH01
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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2. SPICE MODEL
*$
* P ART NUMBER: CRH01
* M ANUF ACTURER: TOSHIB A
* All Rights Reserved Copyright ( C) Bee Technologies Inc. 2008
.MODEL DCRH01 D
+ IS=2.9450E-9
+ N=1.8048
+ RS=15.785E- 3
+ IKF=.37058
+ CJO=29.172E-12
+ M=.40481
+ VJ=.3905
+ ISR=0
+ BV=200
+ IBV=10.000E-6
+ TT=15.795E-9
*$
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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3. DIODE MODEL PARAMETERS
PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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4. Forward Current Characteristic
Circuit Simulation Result
10A
1.0A
100mA
0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc D1
DCRH01
0
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5. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd (V)
Ifwd (A) %Error
Measurement Simulation
0.1 0.818 0.817 -0.10
0.2 0.857 0.857 0.00
0.5 0.921 0.922 0.10
1 0.985 0.984 -0.06
2 1.061 1.061 0.00
5 1.193 1.193 0.00
10 1.336 1.336 0.00
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6. Capacitance Characteristic
Circuit Simulation Result
50p
10p
1.0p
1.0V 10V 40V
I(V2)/(200V/1u)
V(N11360)
Evaluation Circuit
V2
0Vdc
V2 = 200 V1
V1 = 0 D1
TD = 0 DCRH01
TR = 1us
TF = 10ns
PW = 20us
PER = 10us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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7. Comparison Graph
Circuit Simulation Result
Simulation Result
Cj (pF)
Vrev (V) %Error
Measurement Simulation
1 17.557 17.246 -1.77
2 13.852 14.012 1.16
5 10.010 10.066 0.56
10 7.808 7.730 -1.00
20 5.958 5.882 -1.28
40 4.445 4.459 0.31
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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8. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
19.98us 20.00us 20.02us 20.04us 20.06us 20.08us
I(R2)
Time
Evaluation Circuit
R2
50
V1 = -9.1V V2
V2 = 10.9V D1
TD = 4ns DCRH01
TR = 5ns
TF = 8ns
PW = 20us
PER = 50us
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 10.00 9.66 -3.36
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9. Reverse Recovery Characteristic Reference
Trj =10.00(ns)
Trb= 5.80(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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