This document provides a SPICE model for the D1NL20U general purpose rectifier diode manufactured by SHINDENGEN. It includes the model parameters, simulation results comparing the diode's forward and reverse characteristics to measurements, and an evaluation of its reverse recovery characteristics.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: D1NL20U
MANUFACTURER: SHINDENGEN
REMARK: TC=25C
Device Modeling Report
Bee Technologies Inc.

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
SPICE MODEL
PSpice model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
*$
* PART NUMBER: D1NL20U
* MANUFACTURER: SHINDENGEN
* All Rights Reserved Copyright (C) Bee Technologies Inc.2005
.MODEL D1NL20U_s D
+ IS=130.95E-9
+ N=1.8460
+ RS=75.622E-3
+ IKF=11.104
+ ISR=0
+ CJO=80.015E-12
+ M=.43833
+ VJ=.61789
+ BV=200
+ IBV=10.000E-6
+ TT=27.116E-9
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Forward Current Characteristic Reference

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
V_V1
100mV 1.0V 5.0V
I(R1)
10mA
100mA
1.0A
10A
V1
0Vdc
R1
0.01m
0
D1
D1NL20U_S
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph
Circuit Simulation Result
Simulation Result
Ifwd(A)
Vfwd(V)
Measurement
Vfwd(V)
Simulation
%Error
0.01 0.538 0.537 0.186
0.02 0.575 0.576 -0.174
0.05 0.620 0.619 0.161
0.1 0.655 0.656 -0.153
0.2 0.695 0.694 0.144
0.5 0.761 0.762 -0.131
1 0.835 0.834 0.120

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
V(N00016)
100mV 1.0V 10V 100V
I(V2)/(200V/1u)
1.0p
10p
100p
V1
TD = 0
TF = 10ns
PW = 5us
PER = 10us
V1 = 0
TR = 1us
V2 = 200
D1
D1NL20U_S
0
V2
0Vdc
Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph
Circuit Simulation Result
Simulation Result
Vrev(V)
Cj(pF)
Measurement
Cj(pF)
Simulation
%Error
0 80.123 80.123 0.00
0.1 74.873 75.131 -0.34
0.2 70.813 70.830 -0.02
0.5 61.405 61.746 -0.56
1 52.473 52.521 -0.09
2 42.600 42.458 0.33
5 30.635 30.433 0.66
10 23.100 22.981 0.52
20 17.150 17.218 -0.40
50 11.448 11.161 2.51
100 8.418 8.581 -1.94

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Time
19.95us 20.00us 20.05us 20.10us 20.15us
I(R1)
-200mA
0A
200mA
V1
TD = 0
TF = 10ns
PW = 20us
PER = 50us
V1 = -9.39V
TR = 10ns
V2 = 10.7V D1
D1NL20U_S
R1
50
0
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation %Error
trr 22.40 ns 22.38 ns 0.089

9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Reverse Recovery Characteristic Reference
Trj =10.4 (ns)
Trb= 12.0 (ns)
Conditions: Ifwd=Irev=0.2(A), Rl=50
Example
Relation between trj and trb
Measurement