This document provides specifications for the 2SD667 and 2SD667A silicon NPN epitaxial transistors. The transistors are intended for use in low frequency power amplifiers and as complementary pairs with 2SB647/A transistors. Key specifications include maximum ratings for voltage, current and power, electrical characteristics like breakdown voltages and gain, and the TO-92 package dimensions. Performance curves show characteristics like current transfer ratio, saturation voltage and gain bandwidth over a range of collector currents and temperatures.

1. Rev.2.00 Aug 10, 2005 page 1 of 5
2SD667, 2SD667A
Silicon NPN Epitaxial
REJ03G0769-0200
(Previous ADE-208-1137)
Rev.2.00
Aug.10.2005
Application
• Low frequency power amplifier
• Complementary pair with 2SB647/A
Outline
1. Emitter
2. Collector
3. Base
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
3
2
1
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol 2SD667 2SD667A Unit
Collector to base voltage VCBO 120 120 V
Collector to emitter voltage VCEO 80 100 V
Emitter to base voltage VEBO 5 5 V
Collector current IC 1 1 A
Collector peak current iC(peak) 2 2 A
Collector power dissipation PC 0.9 0.9 W
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –50 to +150 °C

2. 2SD667, 2SD667A
Rev.2.00 Aug 10, 2005 page 2 of 5
Electrical Characteristics
(Ta = 25°C)
2SD667 2SD667A
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO 120 — — 120 — — V IC = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO 80 — — 100 — — V IC = 1 mA, RBE = ∞
Emitter to base
breakdown voltage
V(BR)EBO 5 — — 5 — — V IE = 10 µA, IC = 0
Collector cutoff current ICBO — — 10 — — 10 µA VCB = 100 V, IE = 0
DC current transfer ratio hFE1*
1
60 — 320 60 — 200 VCE = 5 V,
IC = 150 mA*
2
hFE2 30 — — 30 — — VCE = 5 V,
IC = 500 mA*
2
Collector to emitter
saturation voltage
VCE(sat) — — 1 — — 1 V IC = 500 mA,
IB = 50 mA*
2
Base to emitter voltage VBE — — 1.5 — — 1.5 V VCE = 5 V,
IC = 150 mA*
2
Gain bandwidth product fT — 140 — — 140 — MHz VCE = 5 V,
IC = 150 mA*
2
Collector output
capacitance
Cob — 12 — — 12 — pF VCB = 10 V, IE = 0,
f = 1 MHz
Notes: 1. The 2SD667 and 2SD667A are grouped by hFE1 as follows.
2. Pulse test
B C D
2SD667 60 to 120 100 to 200 160 to 320
2SD667A 60 to 120 100 to 200

3. 2SD667, 2SD667A
Rev.2.00 Aug 10, 2005 page 3 of 5
Main Characteristics
Maximum Collector Dissipation Curve
Ambient Temperature Ta (°C)
CollectorPowerDissipationPC(W)
0.8
1.2
0.4
0 50 100 150
Typical Output Characteristics
Collector to Emitter Voltage VCE (V)
CollectorCurrentIC(A)
1.0
0.8
0.6
0.4
0.2
0 2 6 104 8
IB = 0
0.5mA
1
2
5
10
15
20
25
30
35
P
C = 0.9 W
Typical Transfer Characteristics
Base to Emitter Voltage VBE (V)
CollectorCurrentIC(mA)
VCE = 5 V
500
200
100
50
20
10
5
2
1
0 0.2 0.6 1.00.4 0.8
Ta=75°C
25
–25
DC Current Transfer Ratio
vs. Collector Current
Collector Current IC (mA)
DCCurrentTransferRatiohFE
300
VCE = 5 V
Ta = 75°C
25
–25
250
200
150
100
50
0
1 10 100 1,0003 30 300
Collector Current IC (mA)
BasetoEmitterSaturationVoltageVBE(sat)(V)
CollectortoEmitterSaturationVoltageVCE(sat)(V)
1.2
IC = 10 IB
Pulse
Ta = –25°C
Ta = –25°C
25
25
75
75
1.0
0.8
0.6
0.4
0.2
0
0.6
0.5
0.4
0.3
0.2
0.1
0
1 10 100 1,0003 30 300
VBE(sat)
VCE(sat)
Saturation Voltage
vs. Collector Current
Collector Current IC (mA)
Gain Bandwidth Product
vs. Collector Current
GainBandwidthProductfT(MHz)
240
200
160
120
80
40
0
10 30 100 300 1,000
VCE = 5 V

4. 2SD667, 2SD667A
Rev.2.00 Aug 10, 2005 page 4 of 5
Collector Output Capacitance vs.
Collector to Base Voltage
Collector to Base Voltage VCB (V)
CollectorOutputCapacitanceCob(pF)
f = 1 MHz
IE = 0
200
100
50
20
10
5
2
1 5 20 1002 10 50

5. 2SD667, 2SD667A
Rev.2.00 Aug 10, 2005 page 5 of 5
Package Dimensions
0.60 Max
0.55 Max
4.8 ± 0.4 3.8 ± 0.4
8.0±0.5
0.7
2.3Max
10.1Min
0.5 Max
1.27
2.54
0.65 ± 0.1
0.75 Max
Package Name
PRSS0003DC-A TO-92 Mod / TO-92 ModV
MASS[Typ.]
0.35gSC-51
RENESAS CodeJEITA Package Code
Unit: mm
Ordering Information
Part Name Quantity Shipping Container
2SD667BTZ-E
2SD667CTZ-E
2SD667DTZ-E
2SD667ABTZ-E
2SD667ACTZ-E
2500 Hold Box, Radial Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.