This document provides a device modeling report for a general purpose rectifier diode with part number 5GLZ47A manufactured by Toshiba. It includes the SPICE model parameters for the diode, simulation results comparing the diode's forward current, capacitance, and reverse recovery characteristics to measurements, and reference circuits used in the simulations.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Device Modeling Report
Bee Technologies Inc.
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: 5GLZ47A
MANUFACTURER: TOSHIBA
REMARK: TC=25C

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
SPICE MODEL
PSpice model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
*$
* PART NUMBER: 5GLZ47A
* MANUFACTURER: TOSHIBA
* REMARK: TC=25C
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
.MODEL 5GLZ47_25s D
+ IS=10.448E-6
+ N=2.5903
+ RS=17.404E-3
+ IKF=.42756
+ ISR=0
+ CJO=112.64E-12
+ M=.42005
+ VJ=.40817
+ ISR=100.00E-12
+ BV=400
+ IBV=50.000E-6
+ TT=44.937E-9
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Forward Current Characteristic Reference

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
0
D1
5GL247_25s
V1
0Vdc
R1
0.01m
V_V1
0V 2.0V
I(D1)
10mA
100mA
1.0A
5.0A
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph
Circuit Simulation Result
Simulation Result
Ifwd(A)
Vfwd(V)
Measurement
Vfwd(V)
Simulation
%Error
0.05 0.574 0.571 0.523
0.1 0.620 0.623 -0.484
0.2 0.682 0.678 0.587
0.5 0.768 0.766 0.260
1 0.852 0.853 -0.117
2 0.956 0.954 0.209

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
V(N00016)
100mV 1.0V 10V 100V
I(V2)/(400V/1u)
10p
100p
5.0p
200p
0
D1
5GL247_25s
V2
0Vdc
V1
TD = 0
TF = 10ns
PW = 5us
PER = 50us
V1 = 0
TR = 1us
V2 = 400
Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph
Circuit Simulation Result
Simulation Result
Vrev(V)
Cj(pF)
Measurement
Cj(pF)
Simulation
%Error
0 112.200 112.200 0.000
0.1 103.200 104.100 -0.872
0.2 95.600 95.800 -0.209
0.5 80.200 80.400 -0.249
1 67.000 66.900 0.149
2 53.500 53.600 -0.187
5 38.000 38.100 -0.263
10 28.700 28.900 -0.697
20 20.900 21.500 -2.871
50 14.500 14.800 -2.069
100 13.000 12.400 4.615

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
R1
50
V1
TD = 0
TF = 10ns
PW = 20us
PER = 50us
V1 = -9.45V
TR = 10ns
V2 = 10.65V
D1
5GL247_25s
0
Time
20.00us 20.10us19.96us 20.16us
I(R1)
-200mA
0A
200mA
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation %Error
trr 36.00 ns 35.78 ns 0.611

9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Reverse Recovery Characteristic Reference
Trj =12.8 (ns)
Trb= 23.2 (ns)
Conditions: Ifwd=Irev=0.2(A), Rl=50
Example
Relation between trj and trb
Measurement