This document contains a SPICE model and characterization data for a Toshiba 1SS397 general purpose rectifier diode. It includes: 1) A SPICE subcircuit model for the diode with parameters defined. 2) Tables showing the diode model parameters and their descriptions. 3) Graphs of simulation results characterizing the diode's forward voltage and current relationship, capacitance over voltage, and reverse recovery time. 4) Comparisons of the simulation results to manufacturer measurement data showing close matches.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ PROFESSIONAL
PART NUMBER: 1SS397
MANUFACTURER: TOSHIBA
Device Modeling Report
Bee Technologies Inc.

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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SPICE MODEL
*S
* PART NUMBER: 1SS397
* MANUFACTURER: TOSHIBA
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
.SUBCKT 1SS397_p A K
R_R2 5 6 100
R_R1 3 4 1
C_C1 5 6 2.2n
E_E1 5 K 3 4 1
S_S1 6 K 4 K _S1
RS_S1 4 K 1G
.MODEL _S1 VSWITCH Roff=50MEG Ron=1m Voff=90mV
Von=100mV
G_G1 K A VALUE { V(3,4)-V(5,6) }
D_D1 2 K D1SS397
D_D2 4 K D1SS397
F_F1 K 3 VF_F1 1
VF_F1 A 2 0V
.MODEL D1SS397 D
+ IS=622.22E-12 N=1.8847 RS=1.0000E-6 IKF=84.196E-3
+ CJO=2.2242E-12 M=.30387 VJ=.4756
+ ISR=0 BV=400 IBV=1.0000E-6
+ TT=600e-9
.ENDS
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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DIODE MODEL PARAMETERS
PSpice model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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V_V1
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(R1)
100uA
1.0mA
10mA
100mA
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
V1
0Vdc
R1
0.01m
0
U1
1SS397_P

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Comparison Graph
Circuit Simulation Result
Simulation Result
Ifwd (A)
Vfwd (V)
%Error
Measurement Simulation
0.0001 0.589 0.584 -0.85
0.0002 0.618 0.618 0.00
0.0005 0.659 0.662 0.46
0.001 0.694 0.696 0.29
0.002 0.731 0.730 -0.14
0.005 0.775 0.776 0.13
0.01 0.812 0.811 -0.12
0.02 0.852 0.848 -0.47
0.05 0.903 0.901 -0.22
0.1 0.947 0.948 0.11

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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V(N11360)
10mV 100mV 1.0V 10V 100V
-I(X_U1.D_D1)/(400V/1u)
100f
1.0p
10p
Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit
0
V1
TD = 0
TF = 10ns
PW = 20us
PER = 10us
V1 = 0
TR = 1us
V2 = 400
V2
0Vdc
U1
1SS397_P

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Comparison Graph
Circuit Simulation Result
Simulation Result
Vrev (V)
Ct (pF)
%Error
Measurement Simulation
0.01 2.221 2.215 -0.27
0.02 2.203 2.201 -0.09
0.05 2.151 2.159 0.37
0.1 2.091 2.099 0.38
0.2 1.993 1.999 0.30
0.5 1.78 1.788 0.45
1 1.588 1.577 -0.69
2 1.338 1.347 0.67
5 1.072 1.059 -1.21
10 0.881 0.869 -1.36
20 0.702 0.709 1.00
50 0.532 0.538 1.13
100 0.432 0.437 1.16

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Time
19.2us 20.0us 20.8us 21.6us 22.4us 23.2us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 320.00 319.00 -0.31
trb ns 584.00 588.00 0.68
trr ns 904.00 907.00 0.33
V1
TD = 180ns
TF = 10ns
PW = 20us
PER = 50us
V1 = -9.1V
TR = 10ns
V2 = 11V
R1
50
0
U1
1SS397_P

9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Reverse Recovery Characteristic Reference
Trj =320(ns)
Trb= 584(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Relation between trj and trb
Example