This document provides a device modeling report for a general purpose rectifier diode with part number 5GLZ47A manufactured by Toshiba. It includes the SPICE model parameters, simulation results comparing the forward and reverse characteristics to measurements, and analysis of the reverse recovery characteristics.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Device Modeling Report
Bee Technologies Inc.
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: 5GLZ47A
MANUFACTURER: TOSHIBA
REMARK: TC=80C

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
SPICE MODEL
PSpice model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
*$
* PART NUMBER: 5GLZ47A
* MANUFACTURER: TOSHIBA
* REMARK: TC=80C
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
.MODEL 5GLZ47A_80s D
+ IS=18.819E-6
+ N=2.4309
+ RS=13.994E-3
+ IKF=.39557
+ ISR=0
+ CJO=128.91E-12
+ M=.43341
+ VJ=.3241
+ BV=400
+ IBV=50.000E-6
+ TT=107.42E-9
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Forward Current Characteristic Reference

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
V_V1
0V 2.0V
I(D1)
10mA
100mA
1.0A
5.0A
0
D1
5GLZ47A_80S
V1
0Vdc
R1
0.01m
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph
Circuit Simulation Result
Simulation Result
Ifwd(A)
Vfwd(V)
Measurement
Vfwd(V)
Simulation
%Error
0.05 0.500 0.499 0.200
0.1 0.550 0.548 0.364
0.2 0.600 0.601 -0.167
0.5 0.686 0.684 0.292
1 0.764 0.763 0.131
2 0.860 0.861 -0.116

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
V2
0Vdc
V1
TD = 0
TF = 10ns
PW = 5us
PER = 50us
V1 = 0
TR = 1us
V2 = 400
0
D1
5GLZ47A_80S
V(N00016)
100mV 1.0V 10V 100V
I(V2)/(400V/1u)
1.0p
10p
100p
1.0n
Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph
Circuit Simulation Result
Simulation Result
Vrev(V)
Cj(pF)
Measurement
Cj(pF)
Simulation
%Error
0 128.400 128.400 0.000
0.1 115.200 119.000 -3.299
0.2 105.200 106.400 -1.141
0.5 85.800 85.700 0.117
1 70.200 70.000 0.285
2 54.600 54.800 -0.366
5 37.400 38.300 -2.406
10 29.000 28.700 1.034
20 21.100 21.400 -1.422
50 14.600 14.500 0.685
100 12.200 11.700 4.098

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Time
20.00us 20.10us 20.20us19.95us
I(R1)
-200mA
0A
200mA
D1
5GLZ47A_80s
V1
TD = 0
TF = 10ns
PW = 20us
PER = 50us
V1 = -9.45V
TR = 10ns
V2 = 10.65V
0
R1
50
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation %Error
trr 80.00 ns 79.77 ns 0.287

9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Reverse Recovery Characteristic Reference
Trj =19.2 (ns)
Trb= 60.8 (ns)
Conditions: Ifwd=Irev=0.2(A), Rl=50
Example
Relation between trj and trb
Measurement