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Device Modeling Report




   COMPONENTS : PHOTOCOUPLER
   PART NUMBER : TLP620
   MANUFACTURER : TOSHIBA




                  Bee Technologies Inc.


All Rights Reserved Copyright (C) Bee Technologies Corporation 2008
DIODE MODEL
  Pspice model
                                          Model description
   Parameter
        IS          Saturation Current
        N           Emission Coefficient
       RS           Series Resistance
       IKF          High-injection Knee Current
      CJO           Zero-bias Junction Capacitance
        M           Junction Grading Coefficient
        VJ          Junction Potential
      ISR           Recombination Current Saturation Value
       BV           Reverse Breakdown Voltage(a positive value)
      IBV           Reverse Breakdown Current(a positive value)
        TT          Transit Time

BIPOLAR JUNCTION TRANSISTOR MODEL
  Pspice
   model                       Model description
 parameter
    NR     Reverse Emission Coefficient
    RB     Base Resistance
    RC     Series Collector Resistance
    CJE    Zero-bias Emitter-Base Junction Capacitance
    CJC    Zero-bias Collector-Base Junction Capacitance
    TF     Forward Transit Time
    TR     Reverse Transit Time

VOLTAGE CONTROLLED VOLTAGE SOURCE MODEL(VCVS)
E<Name><(+)Node><(-)Node>VALUE={Expression}

E<Name><(+)Node><(-)Node>TABLE={Expression}
VOLTAGE CONTROLLED CURRENT SOURCE MODEL(VCCS)
E<Name><(+)Node><(-)Node>VALUE={Expression}


         All Rights Reserved Copyright (C) Bee Technologies Corporation 2008
CURRENT CONTROLLED MODEL(W)
  Pspice                        Model description
   model
 parameter
   IOFF    Controlling current to Off state
    ION    Controlling current to On state
   ROFF    Off Resistance
   RON     On Resistance




         All Rights Reserved Copyright (C) Bee Technologies Corporation 2008
LED IV Curve Characteristics

Simulation result

    100mA




     50mA




     -0mA




    -50mA




   -100mA
       -2.0V                    -1.0V                0V             1.0V      2.0V
           I(I1)
                                                   V(U1:A)


Evaluation Circuit




                                        U1


                                                                         V1
                           I1                                1.1 5Vd c

            10 mAd c
                                        TL P62 0




                       0                                                 0




            All Rights Reserved Copyright (C) Bee Technologies Corporation 2008
Comparison Graph

                  100
                                  Measurement
                      90          Simulation

                      80


                      70


                      60
          Ifwd (mA)




                      50


                      40


                      30


                      20


                      10


                       0
                           0.4   0.6       0.8       1    1.2   1.4    1.6
                                                 VF (V)


Comparison Table

                                           Vfwd(V)
       Ifwd (mA)                                                      % Error
                                 Measurement       Simulation
                 0.100                   0.910             0.919              0.989
                 0.200                   0.948             0.952              0.422
                 0.500                   1.002             0.996             -0.569
                 1.000                   1.035             1.030             -0.502
                 2.000                   1.068             1.065             -0.309
                 5.000                   1.110             1.113              0.306
                10.000                   1.150             1.155              0.461
                20.000                   1.200             1.206              0.500
                50.000                   1.310             1.304             -0.435
               100.000                   1.430             1.430             -0.014


          All Rights Reserved Copyright (C) Bee Technologies Corporation 2008
Comparison Graph

                          0


                         10


                         20


                         30


                         40
           - Ifwd (mA)




                         50


                         60


                         70


                         80


                         90                                          Measurement

                                                                     Simulation
                    100
                              1.6   1.4     1.2          1     0.8       0.6       0.4
                                                  - VF   (V)


Comparison Table

                                              Vfwd(V)
      Ifwd (mA)                                                                   % Error
                                    Measurement       Simulation
          -100.000                         -1.430            -1.430                  -0.014
           -50.000                         -1.310            -1.304                  -0.435
           -20.000                         -1.200            -1.206                   0.500
           -10.000                         -1.150            -1.155                   0.461
            -5.000                         -1.110             -1.113                  0.306
            -2.000                         -1.068            -1.065                  -0.309
            -1.000                         -1.035            -1.030                  -0.502
            -0.500                         -1.002            -0.996                  -0.569
            -0.200                         -0.948            -0.952                   0.422
            -0.100                         -0.910            -0.919                   0.989


          All Rights Reserved Copyright (C) Bee Technologies Corporation 2008
Transistor Saturation Characteristics

Simulation result

  400mV




  200mV




     0V
          0s                           5ms                10ms                    15ms         20ms
               V(U1:C)
                                                          Time
Evaluation Circuit


                          V2                                     V1


                               0V dc                                      0V dc


                                               U1


                     I1                                                              I2

                 1m                                                                 0.2 mAdc

                                               TL P62 0




                 0                                                    0



Comparison Table

                                             Measurement                   Simulation                 % Error
          VCE(sat) (V)                        0.4 (Max)                           0.141                  -


                All Rights Reserved Copyright (C) Bee Technologies Corporation 2008
CTR(Current Transfer Ratio) Characteristics

Simulation result


   500




   400




   300




   200




   100




     1
    100uA                 1.0mA                      10mA                 100mA
        (I(V1)/I(V2))*100
                                             I_I1


Evaluation Circuit


                     V2                             V1


                          0V dc                              0V dc

                                  U1

                                                                     V3
                I1                                           5

             5m

                                  TL P62 0




            0                                            0




            All Rights Reserved Copyright (C) Bee Technologies Corporation 2008
Rise Curve      Table

                                       IO/IF
      If (mA)                                                         % Error
                        Measurement            Simulation
             0.300              59.000                56.973                   -3.436
             0.500              93.000                97.376                   4.705
             1.000            150.000               151.527                    1.018
             2.000            210.000               205.335                    -2.221
             5.000            290.000               276.193                    -4.761
          10.000              332.000               329.861                    -0.644
          15.000              333.500               350.133                    4.987




Fall Curve Table

                                       IO/IF
      If(mA)                                                          % Error
                        Measurement            Simulation
          15.000              333.500               350.133                    4.987
          20.000              290.000               280.538                    -3.263
          50.000              140.000               143.361                    2.401
          60.000              120.000                116.540                   -2.883




         All Rights Reserved Copyright (C) Bee Technologies Corporation 2008
Switching Time Characteristics
Simulation result

    6.0V
1          2

               16mA
    5.0V




      >>
      0V          0A
                   5us      20us    40us                        60us          80us   100us        120us        140us
                     1       V(U1:C) 2                        I(V2)
                                                                            Time

Evaluation Circuit


                                                 V2                                          R1

                                                                                             1.9 k
                                                      0V dc

                                                                       U1


                         I1 = 0
                         I2 = 16 m          I1                                                            V1
                         TD = 1 0u                                                                   5
                         TF = 10n
                         TR = 1 0n
                                                                       TL P62 0
                         PW = 5 0u
                         PE R = 20 0u




                                        0                                                                 0



Comparison Table

      IF=16mA, RL=1.9k                               Measurement                    Simulation                  % Error
                tS (us)                                      15.000                         15.024                   0.160
               tOFF (us)                                     25.000                         25.022                   0.088



                All Rights Reserved Copyright (C) Bee Technologies Corporation 2008

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SPICE MODEL of TLP620 in SPICE PARK

  • 1. Device Modeling Report COMPONENTS : PHOTOCOUPLER PART NUMBER : TLP620 MANUFACTURER : TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Corporation 2008
  • 2. DIODE MODEL Pspice model Model description Parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time BIPOLAR JUNCTION TRANSISTOR MODEL Pspice model Model description parameter NR Reverse Emission Coefficient RB Base Resistance RC Series Collector Resistance CJE Zero-bias Emitter-Base Junction Capacitance CJC Zero-bias Collector-Base Junction Capacitance TF Forward Transit Time TR Reverse Transit Time VOLTAGE CONTROLLED VOLTAGE SOURCE MODEL(VCVS) E<Name><(+)Node><(-)Node>VALUE={Expression} E<Name><(+)Node><(-)Node>TABLE={Expression} VOLTAGE CONTROLLED CURRENT SOURCE MODEL(VCCS) E<Name><(+)Node><(-)Node>VALUE={Expression} All Rights Reserved Copyright (C) Bee Technologies Corporation 2008
  • 3. CURRENT CONTROLLED MODEL(W) Pspice Model description model parameter IOFF Controlling current to Off state ION Controlling current to On state ROFF Off Resistance RON On Resistance All Rights Reserved Copyright (C) Bee Technologies Corporation 2008
  • 4. LED IV Curve Characteristics Simulation result 100mA 50mA -0mA -50mA -100mA -2.0V -1.0V 0V 1.0V 2.0V I(I1) V(U1:A) Evaluation Circuit U1 V1 I1 1.1 5Vd c 10 mAd c TL P62 0 0 0 All Rights Reserved Copyright (C) Bee Technologies Corporation 2008
  • 5. Comparison Graph 100 Measurement 90 Simulation 80 70 60 Ifwd (mA) 50 40 30 20 10 0 0.4 0.6 0.8 1 1.2 1.4 1.6 VF (V) Comparison Table Vfwd(V) Ifwd (mA) % Error Measurement Simulation 0.100 0.910 0.919 0.989 0.200 0.948 0.952 0.422 0.500 1.002 0.996 -0.569 1.000 1.035 1.030 -0.502 2.000 1.068 1.065 -0.309 5.000 1.110 1.113 0.306 10.000 1.150 1.155 0.461 20.000 1.200 1.206 0.500 50.000 1.310 1.304 -0.435 100.000 1.430 1.430 -0.014 All Rights Reserved Copyright (C) Bee Technologies Corporation 2008
  • 6. Comparison Graph 0 10 20 30 40 - Ifwd (mA) 50 60 70 80 90 Measurement Simulation 100 1.6 1.4 1.2 1 0.8 0.6 0.4 - VF (V) Comparison Table Vfwd(V) Ifwd (mA) % Error Measurement Simulation -100.000 -1.430 -1.430 -0.014 -50.000 -1.310 -1.304 -0.435 -20.000 -1.200 -1.206 0.500 -10.000 -1.150 -1.155 0.461 -5.000 -1.110 -1.113 0.306 -2.000 -1.068 -1.065 -0.309 -1.000 -1.035 -1.030 -0.502 -0.500 -1.002 -0.996 -0.569 -0.200 -0.948 -0.952 0.422 -0.100 -0.910 -0.919 0.989 All Rights Reserved Copyright (C) Bee Technologies Corporation 2008
  • 7. Transistor Saturation Characteristics Simulation result 400mV 200mV 0V 0s 5ms 10ms 15ms 20ms V(U1:C) Time Evaluation Circuit V2 V1 0V dc 0V dc U1 I1 I2 1m 0.2 mAdc TL P62 0 0 0 Comparison Table Measurement Simulation % Error VCE(sat) (V) 0.4 (Max) 0.141 - All Rights Reserved Copyright (C) Bee Technologies Corporation 2008
  • 8. CTR(Current Transfer Ratio) Characteristics Simulation result 500 400 300 200 100 1 100uA 1.0mA 10mA 100mA (I(V1)/I(V2))*100 I_I1 Evaluation Circuit V2 V1 0V dc 0V dc U1 V3 I1 5 5m TL P62 0 0 0 All Rights Reserved Copyright (C) Bee Technologies Corporation 2008
  • 9. Rise Curve Table IO/IF If (mA) % Error Measurement Simulation 0.300 59.000 56.973 -3.436 0.500 93.000 97.376 4.705 1.000 150.000 151.527 1.018 2.000 210.000 205.335 -2.221 5.000 290.000 276.193 -4.761 10.000 332.000 329.861 -0.644 15.000 333.500 350.133 4.987 Fall Curve Table IO/IF If(mA) % Error Measurement Simulation 15.000 333.500 350.133 4.987 20.000 290.000 280.538 -3.263 50.000 140.000 143.361 2.401 60.000 120.000 116.540 -2.883 All Rights Reserved Copyright (C) Bee Technologies Corporation 2008
  • 10. Switching Time Characteristics Simulation result 6.0V 1 2 16mA 5.0V >> 0V 0A 5us 20us 40us 60us 80us 100us 120us 140us 1 V(U1:C) 2 I(V2) Time Evaluation Circuit V2 R1 1.9 k 0V dc U1 I1 = 0 I2 = 16 m I1 V1 TD = 1 0u 5 TF = 10n TR = 1 0n TL P62 0 PW = 5 0u PE R = 20 0u 0 0 Comparison Table IF=16mA, RL=1.9k Measurement Simulation % Error tS (us) 15.000 15.024 0.160 tOFF (us) 25.000 25.022 0.088 All Rights Reserved Copyright (C) Bee Technologies Corporation 2008