SPICE MODEL of 2SK4075 (Standard+BDS Model) in SPICE PARK
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SPICE MODEL of 2SK4075 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of 2SK4075 (Standard+BDS Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Model Parameters) PART NUMBER: 2SK4075 MANUFACTURER: NEC Body Diode : (Standard) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 2. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 3. Transconductance Characteristic Circuit Simulation Result Comparison table gfs Id(A) Error(%) Measurement Simulation 1.000 19.333 19.608 1.42 2.000 27.333 27.397 0.24 5.000 42.667 42.735 0.16 10.000 59.500 59.524 0.04 20.000 82.000 81.301 -0.85 40.000 115.000 111.111 -3.38 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 4. Vgs-Id Characteristic Circuit Simulation result 100A 10A 1.0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(Vsense) V_VGS Evaluation circuit Vsense U1 2SK4075 VDS 10Vdc VGS 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 5. Comparison Graph Circuit Simulation Result Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 1.000 2.850 2.967 4.09 2.000 2.920 3.010 3.08 5.000 3.050 3.097 1.55 10.000 3.170 3.198 0.87 20.000 3.310 3.343 0.99 50.000 3.560 3.642 2.30 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 6. Rds(on) Characteristic Circuit Simulation result 30A 25A 20A 15A 10A 5A 0A 0V 31.2mV 62.4mV 93.6mV 124.8mV 156.0mV I(Vsense) V_VDS Evaluation circuit Vsense U1 2SK4075 VDS 0Vdc VGS 10Vdc 0 Simulation Result ID = 30A, VGS = 10V Measurement Simulation Error (%) R DS (on) m 5.2 5.2 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 7. Gate Charge Characteristic Circuit Simulation result 12V 10V 8V 6V 4V 2V 0V 0s 20ns 40ns 60ns V(W1:3) Time*1m Evaluation circuit Vsense I1 U1 D1 60Adc 2SK4075 Dbreak W1 + I2 - W VD TD = 0 ION = 0A 32Vdc I2 = 1m IOFF = 1mA I1 = 0 0 Simulation Result VDD=32V, ID=60A, Measurement Simulation Error (%) VGS=10V Qgs nC 11.00 10.92 -0.73 Qgd nC 15.00 14.89 -0.73 Qg nC 54.00 39.31 -27.20 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd (pF) VDS (V) Error (%) Measurement Simulation 0.10 680.00 690.00 -1.45 0.20 635.00 640.00 -0.78 0.50 540.00 535.00 0.93 1.00 430.00 432.00 -0.46 2.00 325.00 330.00 -1.52 5.00 200.00 205.00 -2.44 10.00 140.00 139.00 0.72 20.00 98.00 97.00 1.03 40.00 62.00 62.60 -0.96 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 9. Switching Time Characteristic Circuit Simulation result 12V 10V 8V 6V 4V 2V 0V -2V 4.85us 4.90us 4.95us 5.00us 5.05us 5.10us 5.15us 5.20us V(2) V(3)/2 Time Evaluation circuit Vsense L2 3 50nH R1 L3 RL 2 0.66 U1 2SK4075 25 30nH V1 = 0 V2 = 20 V1 TD = 5u TR = 10n R2 VDD TF = 10n 25 20Vdc PW = 10u PER = 10m 0 0 0 0 Simulation Result ID=30 A, VDD=20V Measurement Simulation Error(%) VGS=0/10V td(on) ns 18.00 17.99 -0.06 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 10. Output Characteristic Circuit Simulation result 180A VGS=10V 150A 4.5V 120A 90A 60A 30A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V I(Vsense) V_VDS Evaluation circuit Vsense U1 2SK4075 VDS 10Vdc VGS 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 11. Forward Current Characteristic Circuit Simulation Result 1.0KA 100A 10A 1.0A 100mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 U1 0Vdc 2SK4075 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 12. Comparison Graph Circuit Simulation Result Simulation Result VSD(V) IDR(A) %Error Measurement Simulation 0.100 0.630 0.628 -0.32 0.200 0.645 0.645 0.07 0.500 0.670 0.670 -0.02 1.000 0.690 0.688 -0.23 2.000 0.710 0.708 -0.27 5.000 0.740 0.738 -0.32 10.000 0.770 0.765 -0.60 20.000 0.810 0.804 -0.81 50.000 0.900 0.888 -1.37 100.000 1.020 1.007 -1.29 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 13. Reverse Recovery Characteristics (Body Diode) Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 0.92us 1.00us 1.08us 1.16us 1.24us 1.32us I(R1) Time Evaluation Circuit R1 50 V1 = -9.4V V1 V2 = 10.6V TD = 30n U1 TR = 10ns 2SK4075 TF = 10ns PW = 1us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trj ns 20.00 20.09 0.44 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 14. Reverse Recovery Characteristic Reference Measurement Trj=20(ns) Trb=56.8(ns) Conditions: Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2008