SPICE MODEL of 2SK4078 (Professional+BDP Model) in SPICE PARK
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SPICE MODEL of 2SK4078 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of 2SK4078 (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional Model) PART NUMBER: 2SK4078 MANUFACTURER: NEC Body Diode: (Professional Model) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 2. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 3. Transconductance Characteristic Circuit Simulation Result Comparison table gfs Id(A) Error(%) Measurement Simulation 1.00 2.900 2.961 2.09 2.00 2.950 3.009 1.99 5.00 3.080 3.105 0.82 10.00 3.215 3.217 0.05 20.00 3.380 3.378 -0.05 50.00 3.740 3.713 -0.71 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 4. Vgs-Id Characteristic Circuit Simulation result 100A 10A 1.0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(Vsense) V_VGS Evaluation circuit Vsense U2 2SK4078 VDS 10Vdc VGS 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 5. Comparison Graph Circuit Simulation Result Simulation Result VGS(V) ID(A) Measurement Simulation Error (%) 1.00 2.825 2.955 4.61 2.00 2.930 3.000 2.39 5.00 3.080 3.090 0.32 10.00 3.190 3.200 0.31 20.00 3.348 3.350 0.06 50.00 3.615 3.660 1.24 100.00 3.950 4.040 2.28 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 6. Rds(on) Characteristic Circuit Simulation result 25A 20A 15A 10A 5A 0A 0V 40.0mV 80.0mV 120.0mV 157.5mV I(Vsense) V_VDS Evaluation circuit Vsense U1 2SK4078 VDS 10Vdc VGS 10Vdc 0 Simulation Result ID = 25A, VGS = 10V Measurement Simulation Error (%) R DS (on) m 6.3 6.3 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 7. Gate Charge Characteristic Circuit Simulation result 12V 10V 8V 6V 4V 2V 0V 0 10n 20n 30n 40n 50n V(W1:2) Time*1mA Evaluation circuit Vsense I1 U1 D1 50Adc 2SK4078 Dbreak W1 + I2 - W VD TD = 0 ION = 0A 32Vdc 1m IOFF = 1mA I1 = 0 0 Simulation Result VDD=32V, ID=50A, Measurement Simulation Error (%) VGS=10V Qgs nC 7.00 6.96 -0.57 Qgd nC 13.00 12.92 -0.62 Qg nC 45.00 44.84 -0.36 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd (pF) VDS (V) Error(%) Measurement Simulation 0.100 500.00 510.00 -1.96 0.200 470.00 475.00 -1.05 0.500 400.00 403.00 -0.74 1.000 340.00 342.00 -0.58 2.000 270.00 271.00 -0.37 5.000 190.00 192.00 -1.04 10.000 145.00 147.00 -1.36 20.000 110.00 113.00 -2.65 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 9. Switching Time Characteristic Circuit Simulation result 12V 10V 8V 6V 4V 2V 0V -2V 4.94us 4.96us 4.98us 5.00us 5.02us 5.04us 5.06us 5.08us V(2) V(3)/2 Time Evaluation circuit Vsense L2 3 50nH R1 L3 RL 2 U2 0.8 2SK4078 10 30nH V1 = 0 V2 = 20 V1 R2 TD = 5u 10 VDD TR = 10n 20Vdc TF = 10n PW = 10u PER = 10m 0 0 0 0 Simulation Result ID=25A, VDD=20V Measurement Simulation Error(%) VGS=0/10V td(on) ns 12.00 11.97 -0.25 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 10. Output Characteristic Circuit Simulation result 150A VGS=10V 125A 4.5V 100A 75A 50A 25A 0A 0V 0.5V 1.0V 1.5V 2.0V I(Vsense) V_VDS Evaluation circuit Vsense U1 2SK4078 VDS 10Vdc VGS 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 11. Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 10mA 0V 0.5V 1.0V 1.5V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 U1 0Vdc 2SK4078 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 12. Comparison Graph Circuit Simulation Result Simulation Result VSD(V) IDR(A) %Error Measurement Simulation 0.01 0.570 0.569 -0.18 0.10 0.630 0.632 0.32 0.20 0.650 0.651 0.15 0.50 0.680 0.676 -0.59 1.00 0.700 0.696 -0.57 2.00 0.718 0.717 -0.14 5.00 0.750 0.750 0.00 10.00 0.780 0.780 0.00 20.00 0.820 0.823 0.37 50.00 0.920 0.918 -0.17 100.00 1.050 1.051 0.12 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 13. Reverse Recovery Characteristics (Body Diode) Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 9.92us 10.00us 10.08us 10.16us 10.24us I(R1) Time Evaluation Circuit R1 50 V1 = -9.4V V1 V2 = 10.6V U1 TD = 50n D2SK4078 TR = 10ns TF = 10ns PW = 10us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trj ns 19.20 19.33 0.68 trb ns 44.80 44.61 -0.42 trr ns 64.00 63.94 -0.09 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 14. Reverse Recovery Characteristic Reference Measurement Trj=19.2(ns) Trb=44.8(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2008