This document summarizes the modeling of a diode component. It includes: 1) Details of the diode part such as manufacturer and parameters in the SPICE model. 2) Simulation results showing the forward current, capacitance, and reverse recovery characteristics of the diode component along with comparison data to measurements. 3) Circuit diagrams used to simulate the diode's electrical behavior.

1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ PROFESSIONAL
PART NUMBER: RURD460S
MANUFACTURER: FAIRCHILD
REMARK: TC=150 degree
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
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3. Forward Current Characteristic Reference
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4. Forward Current Characteristic
Circuit Simulation Result
5.0A
1.0A
100mA
0V 2.0V
I(X_U1.D_D1)
V_V1
Evaluation Circuit
R1
0.01m
U1
V1
0Vdc RURD460S_150p
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

5. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) %Error
Measurement Simulation
0.1 0.586 0.585 0.171
0.2 0.642 0.644 -0.312
0.5 0.736 0.733 0.408
1 0.818 0.818 0.000
2 0.924 0.922 0.216
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

6. Capacitance Characteristic
Circuit Simulation Result
100p
10p
1.0p
1.0V 10V 100V
-I(X_U1.D_D1)/(600V/1u)
V(N00016)
Evaluation Circuit
V2
0Vdc
V2 = 600 V1
V1 = 0 U1
TD = 0
TR = 1us RURD460S_150p
TF = 10ns
PW = 5us
PER = 50us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

7. Comparison Graph
Circuit Simulation Result
Simulation Result
Cj(pF) Cj(pF)
Vrev(V) %Error
Measurement Simulation
0 101.600 101.600 0.000
1 57.300 56.368 1.627
2 43.600 44.000 -0.917
5 29.200 30.200 -3.425
10 21.700 22.112 -1.899
20 16.650 16.365 1.712
50 11.450 10.800 5.677
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8. Reverse Recovery Characteristic
Circuit Simulation Result
200mA
0A
-200mA
19.90us 20.00us 20.20us 20.36us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.39V V1
V2 = 10.7V U1
TD = 0
TR = 10ns RURD460S_150p
TF = 10ns
PW = 20us
PER = 50us
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj 36.00 ns 35.79 ns 0.583
trb 108.00 ns 107.8 ns 0.185
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

9. Reverse Recovery Characteristic Reference
Measurement
Trj =36 (ns)
Trb= 108 (ns)
Conditions: Ifwd=Irev=0.2(A), Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005