SPICE MODEL of S60SC6MT (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS:
DIODE/ SCHOTTKY RECTIFIER / PROFESSIONAL
PART NUMBER: S60SC6MT
MANUFACTURER: SHINDENGEN
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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2. Circuit Configuration
U1
S60SC6MT
1 2 3
Spice Model Parameters
PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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3. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.5V 1.0V 1.5V 2.0V 2.5V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc S60SC6MT
R2
100MEG
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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4. Comparison Graph
Circuit Simulation Result
100
FORWARD CURRENT:IF(A)
10
1
Measurement
Simulation
0.1
0 0.5 1 1.5 2 2.5
FORWARD VOLTAGE：VF(V)
Simulation Result
Vfwd (V)
Ifwd (A) %Error
Measurement Simulation
0.1 0.2500 0.2485 -0.61
0.2 0.2700 0.2670 -1.11
0.5 0.2900 0.2929 1.01
1 0.3150 0.3145 -0.16
2 0.3400 0.3400 0.00
5 0.3900 0.3854 -1.18
10 0.4400 0.4398 -0.05
20 0.5350 0.5304 -0.86
50 0.7600 0.7722 1.60
100 1.1500 1.1536 0.31
200 1.9000 1.8984 -0.08
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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5. Capacitance Characteristic
Circuit Simulation Result
10n
1.0n
100p
10p
100mV 1.0V 10V 60V
I(V2)/(60V/100n)
V(N16610)
Evaluation Circuit
V2
0Vdc R1
100MEG
V2 = 60 V1
V1 = 0 U1
TD = 0 S60SC6MT
TR = 100ns
TF = 100ns
PW = 100us
PER = 500us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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6. Comparison Graph
Circuit Simulation Result
10000
Measurement
Simulation
JUNCTION CAPACITANCE
1000
Cj(pF)
100
10
0.1 1 10
REVERSE VOLTAGE:VR(V)
Simulation Result
Cj (pF)
VR (V) %Error
Measurement Simulation
0.1 3000.000 3086.700 2.89
0.2 2750.000 2804.600 1.99
0.5 2250.000 2279.200 1.30
1 1800.000 1822.100 1.23
2 1400.000 1383.300 -1.19
5 910.000 912.558 0.28
10 640.000 652.261 1.92
20 460.000 461.462 0.32
60 270.000 263.811 -2.29
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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7. Reverse Characteristic
Circuit Simulation Result
10mA
1.0mA
100uA
10uA
1.0uA
0V 20V 40V 60V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m R2
100MEG
V1
0Vdc U1
S60SC6MT
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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8. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
REVERSE CURRENT:IR(mA )
1
0.1
0.01
0.001
0 10 20 30 40 50 60
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
Simulation Result
IR(mA)
VR(V) Error (%)
Measurement Simulation
2 0.012 0.012 -2.60
10 0.024 0.025 4.20
20 0.035 0.034 -2.06
30 0.049 0.048 -1.94
40 0.080 0.078 -1.94
50 0.135 0.138 2.16
60 0.240 0.239 -0.47
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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