Device Modeling ReportCOMPONENTS:BIPOLAR JUNCTION TRANSISTORPART NUMBER: 2SC945MANUFACTURER:NEC                 Bee Techno...
Pspice  model                                Model descriptionparameter    IS       Saturation Current    BF       Ideal M...
ReverseReverse Early Voltage Characteristic                                      Ic                                       ...
Reverse DC Beta Characteristic (Ie vs. hFE)                                        Measurement                            ...
ForwardForward Early Voltage Characteristic                           Ic   (X2,Y2)          Y=aX+b                        ...
C-B Capacitance Characteristic                                            Measurement                                     ...
BJT Ic-hFE characteristicsCircuit simulation resultEvaluation circuit                All Rights Reserved Copyright (C) Bee...
Comparison GraphCircuit simulation resultSimulation result                                        hFE       Ic(A)         ...
BJT Vce(sat) voltage CharacteristicsCircuit simulation resultEvaluation circuitSimulation resultTest condition: IC/IB = 10...
Output CharacteristicsCircuit simulation result                                                  IB=300uA                 ...
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SPICE MODEL of 2SC945 in SPICE PARK

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SPICE MODEL of 2SC945 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of 2SC945 in SPICE PARK

  1. 1. Device Modeling ReportCOMPONENTS:BIPOLAR JUNCTION TRANSISTORPART NUMBER: 2SC945MANUFACTURER:NEC Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  2. 2. Pspice model Model descriptionparameter IS Saturation Current BF Ideal Maximum Forward Beta NF Forward Current Emission Coefficient VAF Forward Early Voltage IKF Forward Beta Roll-off Knee Current ISE Non-ideal Base-Emitter Diode Saturation Current NE Non-ideal Base-Emitter Diode Emission Coefficient BR Ideal Maximum Reverse Beta NR Reverse Emission Coefficient VAR Reverse Early Voltage IKR Reverse Beta Roll-off Knee Current ISC Non-ideal Base-Collector Diode Saturation Current NC Non-ideal Base-Collector Diode Emission Coefficient NK Forward Beta Roll-off Slope Exponent RE Emitter Resistance RB Base Resistance RC Series Collector Resistance CJE Zero-bias Emitter-Base Junction Capacitance VJE Emitter-Base Junction Potential MJE Emitter-Base Junction Grading Coefficient CJC Zero-bias Collector-Base Junction Capacitance VJC Collector-base Junction Potential MJC Collector-base Junction Grading Coefficient FC Coefficient for Onset of Forward-bias Depletion Capacitance TF Forward Transit Time XTF Coefficient for TF Dependency on Vce VTF Voltage for TF Dependency on Vce ITF Current for TF Dependency on Ic PTF Excess Phase at f=1/2pi*TF TR Reverse Transit Time EG Activation Energy XTB Forward Beta Temperature Coefficient XTI Temperature Coefficient for IS All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  3. 3. ReverseReverse Early Voltage Characteristic Ic VAR Vce Y=aX+b (X1,Y1) (X2,Y2) All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  4. 4. Reverse DC Beta Characteristic (Ie vs. hFE) Measurement Simulation All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  5. 5. ForwardForward Early Voltage Characteristic Ic (X2,Y2) Y=aX+b (X1,Y1) Vce VAF All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  6. 6. C-B Capacitance Characteristic Measurement SimulationE-B Capacitance Characteristic Measurement Simulation All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  7. 7. BJT Ic-hFE characteristicsCircuit simulation resultEvaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  8. 8. Comparison GraphCircuit simulation resultSimulation result hFE Ic(A) %Error Measurement Simulation 0.001 90.909 90.103 0.886600887 0.002 90.909 92.317 1.548801549 0.005 92.592 93.76 1.261448073 0.01 91.743 92.807 1.159761508 0.02 90.324 88.291 2.250786059 0.05 69.252 69.61 0.516952579 0.1 27.855 27.481 1.342667385 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  9. 9. BJT Vce(sat) voltage CharacteristicsCircuit simulation resultEvaluation circuitSimulation resultTest condition: IC/IB = 10, IC=100mA Vce(sat)(V) Vbe(sat)(V) Measurement Simulation Error(%) Measurement Simulation Error(%) 1[max] 107.051m - 1[max] 719.436m - All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  10. 10. Output CharacteristicsCircuit simulation result IB=300uA IB=200uA IB=100uA IB=0Evaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

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