This document summarizes the results of device modeling simulations for an Insulated Gate Bipolar Transistor (IGBT) model CM400HA-12H manufactured by Mitsubishi. The summary includes: 1) Circuit simulations were conducted to analyze the IGBT's transfer, fall time, gate charge, saturation, output, and forward characteristics. 2) Comparison graphs show good agreement between measurement and simulation results, with most errors under 2%. 3) Reverse recovery simulations show the model accurately captures the IGBT's turn-off behavior, with less than 11% error in recovery time and 0.29% error in reverse current.

1. Device Modeling Report
COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: CM400HA-12H
MANUFACTURER: MITSUBISHI
*REMARK: Free-Wheeling Diode (Standard Model)
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

2. Transfer Characteristics
Circuit Simulation result
800A
600A
400A
200A
0A
0V 4V 8V 12V 16V 20V
I(U1:C)
V_VGE
Evaluation circuit
U1
CM400HA-12H
VCE
10Vdc
VGE
15Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

3. Comparison Graph
Circuit Simulation Result
800
measurement
simulation
COLLECTOR CURRENT: IC [A]
600
400
200
0
0 4 8 12 16 20
GATE-EMITTER VOLTAGE: VGE [V]
Simulation Result
Test condition: VCE = 10 V
VGE (V)
IC (A) Error (%)
Measurement Simulation
10 7.300 7.432 1.81
50 8.000 8.036 0.45
100 8.600 8.524 -0.88
200 9.350 9.266 -0.90
500 11.050 10.926 -1.12
800 12.500 12.287 -1.70
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

4. Fall Time Characteristics
Circuit Simulation result
400A
300A
200A
100A
0A
4.0us 5.0us 6.0us 7.0us
I(RL)
Time
Evaluation circuit
RL
Rg U1 0.745
CM400HA-12H
V1 = -15
V2 = 15 1.6
TD = 0.5u V1
TR = 10n VCE
TF = 1n 300Vdc
PW = 4u
PER = 20u
0
Test condition IC=400 (A), VCC=300(V)
Parameter Unit Measurement Simulation Error
tf ns 300.000 300.748 0.249
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

5. Gate Charge Characteristics
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0 0.4u 0.8u 1.2u 1.6u 2.0u
V(W1:1)
Time*1mA
Evaluation circuit
V2
0
I1
D2
U1 Dbreak 400
CM400HA-12H
I1 = 0
I2 = 1m W1 W
TF = 10n + IOFF = 100uA
TR = 10n ION = 0A VCC
TD = 0 I2 -
PER = 700m 400
PW = 7m
0
Test condition: VCC=400 (V), IC=400(A) ,VGE=15(V)
Parameter Unit Measurement Simulation Error(%)
Qge nc 300.000 301.674 0.558
Qgc nc 610.000 594.818 -2.489
Qg nc 1200.000 1223.300 1.942
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

6. Saturation Characteristics
Circuit Simulation result
4.0V
3.0V
2.0V
1.0V
0V
0A 200A 400A 600A 800A
V(U1:C)
I_IC
Evaluation circuit
U1
CM400HA-12H IC
0Adc
VGE
15Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

7. Comparison Graph
Circuit Simulation Result
5
Measurement
Collector-Emitter voltage : VCE [V]
Simulation
4
3
2
1
0
0 100 200 300 400 500 600
Collector current : Ic [A]
Simulation Result
Test condition: VGE = 15 V
VCE (V)
Ic(A) Error (%)
Measurement Simulation
50 1.200 1.226 2.16
100 1.440 1.417 -1.58
200 1.725 1.714 -0.66
300 1.925 1.938 0.65
400 2.100 2.121 1.01
500 2.300 2.295 -0.23
600 2.500 2.487 -0.52
700 2.730 2.727 -0.11
800 2.975 3.045 2.37
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

8. Output Characteristics
Circuit Simulation result
800A
12
VGE=20
15 V
11
400A
10
9
7
8
0A
0V 2V 4V 6V 8V 10V
I(R1)
V_VCE
Evaluation circuit
R1
0.001m
U1
CM400HA-12H VCE
10Vdc
VGE
0
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

9. Forward Current Characteristic
Circuit Simulation Result
1.0KA
100A
10A
0V 0.8V 1.6V 2.4V 3.2V 4.0V
I(Vsense)
V(EC)
Evaluation Circuit
Vsense
EC
V1
0Vdc
0Vdc
V2
U1
CM400HA-12H
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

10. Comparison Graph
Circuit Simulation Result
1000
Measurement
Simulation
Forward current : IF [ A ]
100
10
0 0.8 1.6 2.4 3.2 4
Forward on voltage : VF [ V ]
Simulation Result
VEC(V)
IE(A) %Error
Measurement Simulation
30 0.880 0.875 -0.59
50 1.000 1.004 0.37
100 1.220 1.231 0.90
200 1.550 1.546 -0.26
500 2.230 2.214 -0.72
800 2.760 2.769 0.33
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

11. Reverse Recovery Characteristics
Circuit Simulation result
500A
250A
0A
-100A
5.0us 5.5us 6.0us 6.5us 7.0us
I(FWD)
Time
Evaluation circuit
L2
1 2
355nH
D1
DCM400HA-12H
IC = 400
1500uH
VCE
FWD 2 1 300
L1
Rg U1
CM400HA-12H
V1 = -15
V2 = 15 2.1
TD = 5u V1
TR = 10n
TF = 10n
PW = 4.998u
PER = 100u
0
Test condition: VCC=300 (V), IC=400(A) ,VGE=+15(V)
Parameter Unit Measurement Simulation Error(%)
trr nsec 82 72.977 -11.00
Irr A 28 28.081 0.29
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009