This document summarizes the results of device modeling simulations for an Insulated Gate Bipolar Transistor (IGBT) chip. It includes:
1) 8 sections that analyze the IGBT's transfer characteristics, gate charge characteristics, saturation characteristics, output characteristics, and reverse recovery characteristics under various test conditions.
2) Circuit diagrams and graphs comparing the simulation results to manufacturer measurements with good agreement within 1%.
3) The IGBT is identified as a 1MB03D-120 from Fuji Electric with a special free-wheeling diode model.