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Device Modeling Report




COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: CM200HA-24H
MANUFACTURER: MITSUBISHI
REMARK: Free-Wheeling Diode (Standard Model)




                     Bee Technologies Inc.




       All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
IGBT SPICE Model Parameters

   PSpice model
                                          Model description
    parameter
       TAU         Ambipolar Recombination Lifetime
        KP         MOS Transconductance
      AREA         Area of the Device
       AGD         Gate-Drain Overlap Area
       WB          Metallurgical Base Width
        VT         Threshold Voltage
        KF         Triode Region Factor
       CGS         Gate-Source Capacitance per Unit Area
      COXD         Gate-Drain Oxide Capacitance per Unit Area
       VTD         Gate-Drain Overlap Depletion Threshold




            All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
Transfer Characteristics

Circuit Simulation result

         400A




         320A




         240A




         160A




          80A




           0A
                0V             4V            8V            12V              16V     20V
                     I(U1:C)
                                                   V_VGE


Evaluation circuit




                                                   U1
                                                   CM200HA-24H
                                                                    VCE
                                                                    10Vdc
                                    VGE
                                    15Vdc




                                               0




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
Comparison Graph

Circuit Simulation Result


                                      400
                                                      Measurement

                                                      Simulation
         COLLECTOR CURRENT, IC, (A)




                                      320



                                      240



                                      160



                                       80



                                         0
                                             0          4             8         12            16          20

                                                       GATE-EMITTER VOLTAGE, VGE, (V)


Simulation Result


Test condition: VCE = 10 V


                                                                     VGE (V)
                                      IC (A)                                                       Error (%)
                                                      Measurement          Simulation
                                                 10                7.400              7.493              1.26
                                                 20                7.900              7.832             -0.86
                                                 50                8.500              8.504              0.04
                                             100                   9.250              9.274              0.26
                                             200              10.400                 10.385             -0.14
                                             400              12.000                 12.001              0.01




                                         All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
Fall Time Characteristics

Circuit Simulation result

               200A




               150A




               100A




                50A




                 0A
                  2us       3us    4us     5us   6us   7us      8us    9us    10us   11us
                         I(RL)
                                                       Time

Evaluation circuit




                                                                                RL
                                         Rg                   U1                3
                                                              CM200HA-24H
                      V1 = 0
                      V2 = 15            1.6
                      TD = 0      V1
                      TR = 10n                                                   VCE
                      TF = 10n                                                   600Vdc
                      PW = 3u
                      PER = 20u

                                                       0




Test condition IC=200 (A), VCC=600(V)


     Parameter             Unit        Measurement                 Simulation               Error
          tf                ns                   350.000                     350.129           0.037



                  All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
Gate Charge Characteristics

Circuit Simulation result

              20V




              16V




              12V




                 8V




                 4V




                 0V
                      0              0.4u                0.8u                 1.2u         1.6u
                          V(W1:1)
                                                       Time*1mA

Evaluation circuit

                                                                         V2



                                                                         0

                                                                                           I1
                                                                      U1          D2
                                                                      CM200HA-24H Dbreak   200

                 I1 = 0                 W1
                 I2 = 1m                    +
                 TF = 10n                                                                  V3
                 TR = 10n                   -
                 TD = 0        I2       W
                 PER = 500m             IOFF = 100uA                                       600
                 PW = 5m                ION = 0A


                                                                  0




Test condition: VCC=600 (V), IC=200(A) ,VGE=15(V)


        Parameter             Unit    Measurement                     Simulation                Error(%)
           Qge                nc                 350.000                        350.000            0.000
           Qgc                nc                 480.000                        479.167           -0.174
            Qg                nc                1000.000                      1008.200             0.820


                  All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
Saturation Characteristics

Circuit Simulation result

           5.0V




           4.0V




           3.0V




           2.0V




           1.0V




              0V
                   0A             80A     160A           240A         320A        400A
                        V(U1:C)
                                                 I_IC

Evaluation circuit




                                                        U1
                                                        CM200HA-24H
                                                                        IC
                                                                        0Adc
                                  VGE
                         15Vdc




                                                  0




                   All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
Comparison Graph

Circuit Simulation Result


                                               5
                                                           Measurement

                                                           Simulation
          SATURATION VOLTAGE, VCE(sat), (V)




                                               4
                COLLECTOR-EMITTER




                                               3



                                               2



                                               1



                                               0
                                                   0         80          160         240           320          400

                                                                COLLECTOR-CURRE NT, IC, (A)

Simulation Result


Test condition: VGE = 15 V

                                                                  VCE (V)
                                        Ic(A)                                                       Error (%)
                                                         Measurement    Simulation
                                                    30          1.480          1.478                         -0.13
                                                    40          1.630          1.612                         -1.09
                                                    80          1.900          1.936                          1.92
                                                   160              2.350                  2.331             -0.82
                                                   240              2.700                  2.689             -0.40
                                                   320              3.000                  3.018              0.61
                                                   400              3.250                  3.244             -0.18




                                              All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
Output Characteristics

Circuit Simulation result


          400A
                                                                                        12
                                 VGE=20V   15


          320A


                                                                                        11

          240A




                                                                                        10
          160A




                                                                                        9
           80A


                                                                                        8
                                                                                        7
            0A
                 0V                2V           4V                6V               8V        10V
                      I(U1:C)
                                                         V_VCE


Evaluation circuit




                                                          U1                 VCE
                                                          CM200HA-24H10Vdc



                                  VGE
                         15Vdc




                                                     0




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
Forward Current Characteristic

Circuit Simulation Result


            1.0KA




             100A




              10A
                1.0V       1.5V          2.0V            2.5V     3.0V         3.5V
                    I(Vsense)
                                                 V_VEC



Evaluation Circuit


                                       Vsense


                                       0Vdc



                                                U1
                            VEC                 CM200HA-24H




                                                 0




                All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
Comparison Graph

Circuit Simulation Result


                                    1.E+03
                                                    Measurement
                                                    Simulation
         EMITTER CURRENT, IE, (A)




                                    1.E+02




                                    1.E+01
                                             1        1.5           2         2.5           3         3.5

                                                 EMITTER-COLLECTOR VOLTAGE, VEC, (V)

Simulation Result


                                                              VEC(V)
                                    IE(A)                                                       %Error
                                                 Measurement            Simulation
                                         10                 1.110                   1.151             3.71
                                         20                 1.260                   1.320             4.75
                                         50                 1.600                   1.617             1.09
                                        100                 2.000                   1.938            -3.08
                                        200                 2.500                   2.427            -2.93
                                        400                 3.200                   3.248             1.50




                                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

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Device Modeling Report for Insulated Gate Bipolar Transistor

  • 1. Device Modeling Report COMPONENTS: Insulated Gate Bipolar Transistor (IGBT) PART NUMBER: CM200HA-24H MANUFACTURER: MITSUBISHI REMARK: Free-Wheeling Diode (Standard Model) Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
  • 2. IGBT SPICE Model Parameters PSpice model Model description parameter TAU Ambipolar Recombination Lifetime KP MOS Transconductance AREA Area of the Device AGD Gate-Drain Overlap Area WB Metallurgical Base Width VT Threshold Voltage KF Triode Region Factor CGS Gate-Source Capacitance per Unit Area COXD Gate-Drain Oxide Capacitance per Unit Area VTD Gate-Drain Overlap Depletion Threshold All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
  • 3. Transfer Characteristics Circuit Simulation result 400A 320A 240A 160A 80A 0A 0V 4V 8V 12V 16V 20V I(U1:C) V_VGE Evaluation circuit U1 CM200HA-24H VCE 10Vdc VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
  • 4. Comparison Graph Circuit Simulation Result 400 Measurement Simulation COLLECTOR CURRENT, IC, (A) 320 240 160 80 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (V) Simulation Result Test condition: VCE = 10 V VGE (V) IC (A) Error (%) Measurement Simulation 10 7.400 7.493 1.26 20 7.900 7.832 -0.86 50 8.500 8.504 0.04 100 9.250 9.274 0.26 200 10.400 10.385 -0.14 400 12.000 12.001 0.01 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
  • 5. Fall Time Characteristics Circuit Simulation result 200A 150A 100A 50A 0A 2us 3us 4us 5us 6us 7us 8us 9us 10us 11us I(RL) Time Evaluation circuit RL Rg U1 3 CM200HA-24H V1 = 0 V2 = 15 1.6 TD = 0 V1 TR = 10n VCE TF = 10n 600Vdc PW = 3u PER = 20u 0 Test condition IC=200 (A), VCC=600(V) Parameter Unit Measurement Simulation Error tf ns 350.000 350.129 0.037 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
  • 6. Gate Charge Characteristics Circuit Simulation result 20V 16V 12V 8V 4V 0V 0 0.4u 0.8u 1.2u 1.6u V(W1:1) Time*1mA Evaluation circuit V2 0 I1 U1 D2 CM200HA-24H Dbreak 200 I1 = 0 W1 I2 = 1m + TF = 10n V3 TR = 10n - TD = 0 I2 W PER = 500m IOFF = 100uA 600 PW = 5m ION = 0A 0 Test condition: VCC=600 (V), IC=200(A) ,VGE=15(V) Parameter Unit Measurement Simulation Error(%) Qge nc 350.000 350.000 0.000 Qgc nc 480.000 479.167 -0.174 Qg nc 1000.000 1008.200 0.820 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
  • 7. Saturation Characteristics Circuit Simulation result 5.0V 4.0V 3.0V 2.0V 1.0V 0V 0A 80A 160A 240A 320A 400A V(U1:C) I_IC Evaluation circuit U1 CM200HA-24H IC 0Adc VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
  • 8. Comparison Graph Circuit Simulation Result 5 Measurement Simulation SATURATION VOLTAGE, VCE(sat), (V) 4 COLLECTOR-EMITTER 3 2 1 0 0 80 160 240 320 400 COLLECTOR-CURRE NT, IC, (A) Simulation Result Test condition: VGE = 15 V VCE (V) Ic(A) Error (%) Measurement Simulation 30 1.480 1.478 -0.13 40 1.630 1.612 -1.09 80 1.900 1.936 1.92 160 2.350 2.331 -0.82 240 2.700 2.689 -0.40 320 3.000 3.018 0.61 400 3.250 3.244 -0.18 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
  • 9. Output Characteristics Circuit Simulation result 400A 12 VGE=20V 15 320A 11 240A 10 160A 9 80A 8 7 0A 0V 2V 4V 6V 8V 10V I(U1:C) V_VCE Evaluation circuit U1 VCE CM200HA-24H10Vdc VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
  • 10. Forward Current Characteristic Circuit Simulation Result 1.0KA 100A 10A 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V I(Vsense) V_VEC Evaluation Circuit Vsense 0Vdc U1 VEC CM200HA-24H 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
  • 11. Comparison Graph Circuit Simulation Result 1.E+03 Measurement Simulation EMITTER CURRENT, IE, (A) 1.E+02 1.E+01 1 1.5 2 2.5 3 3.5 EMITTER-COLLECTOR VOLTAGE, VEC, (V) Simulation Result VEC(V) IE(A) %Error Measurement Simulation 10 1.110 1.151 3.71 20 1.260 1.320 4.75 50 1.600 1.617 1.09 100 2.000 1.938 -3.08 200 2.500 2.427 -2.93 400 3.200 3.248 1.50 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009