SPICE MODEL of CM600HU-12H (Professional+FWDS Model) in SPICE PARK
•
0 likes•225 views
SPICE MODEL of CM600HU-12H (Professional+FWDS Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
Recommended
Recommended
More Related Content
What's hot
What's hot (20)
Similar to SPICE MODEL of CM600HU-12H (Professional+FWDS Model) in SPICE PARK
Similar to SPICE MODEL of CM600HU-12H (Professional+FWDS Model) in SPICE PARK (20)
More from Tsuyoshi Horigome
More from Tsuyoshi Horigome (20)
Recently uploaded
Recently uploaded (20)
SPICE MODEL of CM600HU-12H (Professional+FWDS Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Insulated Gate Bipolar Transistor (IGBT) PART NUMBER: CM600HU-12H MANUFACTURER: MITSUBISHI *REMARK: Free-Wheeling Diode (Standard Model) Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 2. Transfer Characteristics Circuit Simulation result 1.20KA 0.96KA 0.72KA 0.48KA 0.24KA 0A 0V 4V 8V 12V 16V 20V I(U1:C) V_VGE Evaluation circuit U1 CM600HU-12H VCE 10Vdc VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 3. Comparison Graph Circuit Simulation Result 1200 measurement simulation 960 COLLECTOR CURRENT: IC [A] 720 480 240 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE: VGE [V] Simulation Result Test condition: VCE = 10 V VGE (V) IC (A) Error (%) Measurement Simulation 50 7.900 8.054 1.95 200 9.000 9.153 1.70 400 10.250 10.163 -0.85 600 11.200 11.001 -1.78 800 12.075 11.751 -2.68 1000 12.800 12.447 -2.76 1200 13.45 13.103 2.37 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 4. Fall Time Characteristics Circuit Simulation result 600A 400A 200A 0A 4.0us 5.0us 6.0us 7.0us I(RL) Time Evaluation circuit RL Rg U1 0.482 CM600HU-12H V1 = -15 V2 = 15 1 TD = 0.5u V1 TR = 10n VCE TF = 1n 300Vdc PW = 4u PER = 20u 0 Test condition IC=600 (A), VCC=300(V) Parameter Unit Measurement Simulation Error tf ns 300.000 303.154 1.051 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 5. Gate Charge Characteristics Circuit Simulation result 20V 16V 12V 8V 4V 0V 0 0.4u 0.8u 1.2u 1.6u V(W1:1) Time*1mA Evaluation circuit V2 0 I1 D2 U1 Dbreak 600 CM600HU-12H I1 = 0 I2 = 1m W1 W TF = 10n + IOFF = 100uA TR = 10n ION = 0A VCC TD = 0 I2 - PER = 700m 300 PW = 7m 0 Test condition: VCC=300 (V), IC=600(A) ,VGE=15(V) Parameter Unit Measurement Simulation Error(%) Qge nc 280.000 279.308 -0.25 Qgc nc 600.000 606.007 1.00 Qg nc 1200.000 1198.000 -0.17 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 6. Saturation Characteristics Circuit Simulation result 5.0V 4.0V 3.0V 2.0V 1.0V 0V 0A 0.2KA 0.4KA 0.6KA 0.8KA 1.0KA 1.2KA V(U1:C) I_IC Evaluation circuit U1 CM600HU-12H IC 0Adc VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 7. Comparison Graph Circuit Simulation Result 5 Measurement Simulation Collector-Emitter voltage : VCE [V] 4 3 2 1 0 0 240 480 720 960 1200 Collector current : Ic [A] Simulation Result Test condition: VGE = 15 V VCE (V) Ic(A) Error (%) Measurement Simulation 50 1.135 1.157 1.91 100 1.345 1.331 -1.08 200 1.640 1.624 -0.98 500 2.265 2.283 0.79 700 2.660 2.644 -0.60 1000 3.275 3.258 -0.51 1200 3.775 3.837 1.64 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 8. Output Characteristics Circuit Simulation result 1.20KA VGE=20 15 14 13 V 0.96KA 12 0.72KA 11 0.48KA 10 0.24KA 9 8 0A 0V 2V 4V 6V 8V 10V I(R1) V_VCE Evaluation circuit R1 0.001m U1 CM600HU-12H VCE 10Vdc VGE 0 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 9. Forward Current Characteristic Circuit Simulation Result 10KA 1.0KA 100A 10A 0.6V 0.8V 1.2V 1.6V 2.0V 2.4V 2.8V I(Vsense) V(EC) Evaluation Circuit Vsense EC V1 0Vdc U1 0Vdc V2 CM600HU-12H 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 10. Comparison Graph Circuit Simulation Result 10000 Measurement Simulation Forward current : IF [ A ] 1000 100 10 0.6 1 1.4 1.8 2.2 2.6 3 Forward on voltage : VF [ V ] Simulation Result VEC(V) IE(A) %Error Measurement Simulation 60 1.020 1.025 0.52 100 1.130 1.142 1.05 200 1.360 1.353 -0.51 500 1.820 1.809 -0.60 1000 2.430 2.437 0.29 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 11. Reverse Recovery Characteristics Circuit Simulation result 800A 400A 0A 6.0us 6.5us 7.0us 7.5us 8.0us I(FWD) Time Evaluation circuit L2 1 2 114nH D1 DCM600HU-12H IC = 600 1500uH VCE FWD 2 1 300 L1 Rg U1 CM600HU-12H V1 = -15 V2 = 15 2.1 TD = 5u V1 TR = 10n TF = 10n PW = 4.998u PER = 100u 0 Test condition: VCC=300 (V), IC=600(A) ,VGE=+15(V) Parameter Unit Measurement Simulation Error(%) trr nsec 100 48.241 -51.76 Irr A 30 30.17 0.57 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009