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Device Modeling Report




COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: 1MBH50-060
MANUFACTURER: FUJI ELECTRIC




                     Bee Technologies Inc.




       All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
Transfer Characteristics

Circuit Simulation result

                 100A




                     80A




                     60A




                     40A




                     20A




                     0A
                       0V             4V       8V              12V    16V        20V
                            I(U1:C)
                                                    V_VGE




Evaluation circuit




                                                  U1
                                                  1MBH50-060         VCE
                                                                     5Vdc
                                  VGE
                                  15Vdc




                                              0




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
Comparison Graph

Simulation result




Comparison table


Test condition: VCE =5 (V)


                                             VGE (V)
               IC (A)                                                       %Error
                               Measurement            Simulation
                          2               8.000                 8.003              0.04
                        44               10.000                 9.985              -0.15
                       100               11.665               11.642               -0.20




                    All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
Fall Time Characteristics

Circuit Simulation result

                 50A




                 40A




                 30A




                 20A




                 10A




                     0A
                     4.0us     4.4us     4.8us     5.2us       5.6us    6.0us   6.4us      6.8us
                         I(RL)
                                                           Time




Evaluation circuit




                                                                                 RL
                                              Rg                                5.95
                                                               U1
                            V1 = -15                           1MBH50-060
                            V2 = 15           62
                            TD = 0.5u    V1
                            TR = 10n                                              VCE
                            TF = 1n                                               300Vdc
                            PW = 4u
                            PER = 20u



                                                           0




Test condition: IC=50 (A), VCC=300 (V)


       Parameter          Unit          Measurement                    Simulation                  %Error
            tf              us                       0.130                        0.130                     0




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
Gate Charge Characteristics

Circuit Simulation result

                     25V




                     20V




                     15V




                     10V




                      5V




                      0V
                           0              50n             100n          150n              200n             250n    280n
                               V(W1:1)
                                                                   Time*1mA




Evaluation circuit


                                                                                          V2



                                                                                          0
                                                                                                                  IC
                                                                                                  D2
                                                                                                  Dbreak          50
                                                                                   U1
                                                                                   1MBH50-060
                     I1 = 0
                     I2 = 1m                     W1          W
                     TF = 10n                     +          IOFF = 100uA
                     TR = 10n                                ION = 0A                                             VCC
                     TD = 0          I2               -
                     PER = 700m                                                                                   300
                     PW = 7m

                                                                               0




Test condition: VCC=300 (V), IC=50 (A), VGE=15 (V)


         Parameter                Unit          Measurement                          Simulation                         %Error
             Qge                    nc                           30.000                           30.435                   1.45
             Qgc                    nc                           85.000                           85.435                   0.51
              Qg                    nc                       178.000                             177.137                  -0.48


                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
Saturation Characteristics

Circuit Simulation result

                 100A




                     80A




                     60A




                     40A




                     20A




                     0A
                       0V           1.0V       2.0V              3.0V    4.0V        5.0V
                            I(IC)
                                                      V(IC:-)




Evaluation circuit




                                                          U1            IC
                                                          1MBH50-060    0Adc
                                    VGE
                            15Vdc




                                                      0




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
Comparison Graph

Simulation result




Comparison table


Test condition: VGE =15 (V)

                                       VCE (V)
                IC(A)                                                     %Error
                              Measurement    Simulation
                         5           1.340          1.355                           1.11
                        10           1.550          1.530                          -1.29
                        20           1.830          1.827                          -0.16
                        50                2.500                2.505               0.20
                        80                3.085                3.068               -0.54
                       100                3.500                3.492               -0.23




                    All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
Output Characteristics

Circuit Simulation result

                 100A
                                                         20          15           12

                     80A                                 V           V            V


                     60A

                                                                                  10
                     40A                                                          V


                     20A


                                                                                 VGE=8
                     0A
                       0V             1.0V    2.0V            3.0V        4.0V    V    5.0V
                            I(R1)
                                                     V_VCE




Evaluation circuit

                                                             R1

                                                        0.001m




                                                   U1                     VCE
                                                   1MBH50-060             5Vdc

                                VGE
                                0




                                               0




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

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SPICE MODEL of 1MBH50-060 (Professional Without Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: Insulated Gate Bipolar Transistor (IGBT) PART NUMBER: 1MBH50-060 MANUFACTURER: FUJI ELECTRIC Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
  • 2. Transfer Characteristics Circuit Simulation result 100A 80A 60A 40A 20A 0A 0V 4V 8V 12V 16V 20V I(U1:C) V_VGE Evaluation circuit U1 1MBH50-060 VCE 5Vdc VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
  • 3. Comparison Graph Simulation result Comparison table Test condition: VCE =5 (V) VGE (V) IC (A) %Error Measurement Simulation 2 8.000 8.003 0.04 44 10.000 9.985 -0.15 100 11.665 11.642 -0.20 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
  • 4. Fall Time Characteristics Circuit Simulation result 50A 40A 30A 20A 10A 0A 4.0us 4.4us 4.8us 5.2us 5.6us 6.0us 6.4us 6.8us I(RL) Time Evaluation circuit RL Rg 5.95 U1 V1 = -15 1MBH50-060 V2 = 15 62 TD = 0.5u V1 TR = 10n VCE TF = 1n 300Vdc PW = 4u PER = 20u 0 Test condition: IC=50 (A), VCC=300 (V) Parameter Unit Measurement Simulation %Error tf us 0.130 0.130 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
  • 5. Gate Charge Characteristics Circuit Simulation result 25V 20V 15V 10V 5V 0V 0 50n 100n 150n 200n 250n 280n V(W1:1) Time*1mA Evaluation circuit V2 0 IC D2 Dbreak 50 U1 1MBH50-060 I1 = 0 I2 = 1m W1 W TF = 10n + IOFF = 100uA TR = 10n ION = 0A VCC TD = 0 I2 - PER = 700m 300 PW = 7m 0 Test condition: VCC=300 (V), IC=50 (A), VGE=15 (V) Parameter Unit Measurement Simulation %Error Qge nc 30.000 30.435 1.45 Qgc nc 85.000 85.435 0.51 Qg nc 178.000 177.137 -0.48 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
  • 6. Saturation Characteristics Circuit Simulation result 100A 80A 60A 40A 20A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(IC) V(IC:-) Evaluation circuit U1 IC 1MBH50-060 0Adc VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
  • 7. Comparison Graph Simulation result Comparison table Test condition: VGE =15 (V) VCE (V) IC(A) %Error Measurement Simulation 5 1.340 1.355 1.11 10 1.550 1.530 -1.29 20 1.830 1.827 -0.16 50 2.500 2.505 0.20 80 3.085 3.068 -0.54 100 3.500 3.492 -0.23 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
  • 8. Output Characteristics Circuit Simulation result 100A 20 15 12 80A V V V 60A 10 40A V 20A VGE=8 0A 0V 1.0V 2.0V 3.0V 4.0V V 5.0V I(R1) V_VCE Evaluation circuit R1 0.001m U1 VCE 1MBH50-060 5Vdc VGE 0 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009