SPICE MODEL of 1MBC10D-060 (Professional+FWDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: 1MBC10D-060
MANUFACTURER: FUJI ELECTRIC
*REMARK: Free-Wheeling Diode Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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2. Transfer Characteristics
Circuit Simulation result
25A
20A
15A
10A
5A
0A
0V 4V 8V 12V 16V 20V
I(U1:C)
V_VGE
Evaluation circuit
U1
1MBC10D-060
VCE
U2 5Vdc
VGE D1MBC10D-060_P
15Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
2

3. Comparison Graph
Simulation result
Comparison table
Test condition: VCE =5 (V)
VGE (V)
IC (A) %Error
Measurement Simulation
0.000 8.000 8.017 0.21
6.000 10.000 9.870 -1.30
20.500 12.000 11.983 -0.14
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
3

4. Fall Time Characteristics
Circuit Simulation result
10A
8A
6A
4A
2A
0A
9.6us 10.0us 11.0us 12.0us 12.6us
I(RL)
Time
Evaluation circuit
RL
Rg U1 29.75
1MBC10D-060
V1 = -15
V2 = 15 220 U2
TD = 0 V1 D1MBC10D-060_P
TR = 10n VCE
TF = 1n 300Vdc
PW = 10u
PER = 1m
0
Test condition: IC=10 (A), VCC=300 (V)
Parameter Unit Measurement Simulation %Error
tf us 0.150 0.149 -0.67
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
4

5. Gate Charge Characteristics
Circuit Simulation result
20V
10V
0V
0 10n 20n 30n 40n 50n
V(W1:1)
Time*1mA
Evaluation circuit
V2
0
I1
D2
U1 Dbreak 10
1MBC10D-060
I1 = 0 U2
I2 = 1m W1 W D1MBC10D-060_P
TF = 10n + IOFF = 100uA
TR = 10n ION = 0A VCC
TD = 0 I2 -
PER = 700m 300
PW = 7m
0
Test condition: VCC=300 (V), IC=10 (A), VGE=15 (V)
Parameter Unit Measurement Simulation %Error
Qge nc 6.000 6.054 0.90
Qgc nc 17.500 17.189 -1.78
Qg nc 35.600 35.951 0.99
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
5

6. Saturation Characteristics
Circuit Simulation result
20A
15A
10A
5A
0A
0V 2.0V 4.0V 6.0V
I(IC)
V(IC:-)
Evaluation circuit
U1
1MBC10D-060 IC
0Adc
U2
VGE D1MBC10D-060_P
15Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
6

7. Comparison Graph
Simulation result
Comparison table
Test condition: VGE =15 (V)
VCE (V)
Ic(A) %Error
Measurement Simulation
5 1.900 1.869 -1.63
10 2.475 2.404 -2.87
20 3.450 3.319 -3.80
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
7

8. Output Characteristics
Circuit Simulation result
20A
20
15
V 12
V
15A V
10A
10
V
5A
VGE=8
0A V
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V
I(R1)
V_VCE
Evaluation circuit
R1
0.001m
U1
1MBC10D-060 VCE
5Vdc
U2
VGE D1MBC10D-060_P
0
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
8

9. FWD Forward Current Characteristics
Circuit Simulation result
20A
15A
10A
5A
0A
0V 1.0V 2.0V 3.0V 4.0V
I(Vsense)
V(EC)
Evaluation circuit
Vsense
EC
V1
0Vdc
0Vdc
V2
U1
1MBC10D-060
U2
D1MBC10D-060_P
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
9

10. Comparison Graph
Simulation result
Comparison table
VF (V)
IF(A) %Error
Measurement Simulation
0 0.810 0.841 3.83
1 1.240 1.253 1.02
2 1.400 1.388 -0.84
5 1.675 1.665 -0.61
10 2.000 2.015 0.75
20 2.600 2.597 -0.11
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
10

11. Reverse Recovery Characteristics
Circuit Simulation result
10A
8A
6A
4A
2A
0A
-2A
5.0us 5.5us 6.0us 6.5us
I(FWD)
Time
Evaluation circuit
L2
1 2
9.5uH
U3
D1MBC10D-060_P
L1
1500uH
FWD 2 1
IC = 10
C VCE
300
I
Rg VU1
1MBC10D-060
V1 = -15
V2 = 15 220 U2
TD = 5u V1 D1MBC10D-060_P
TR = 10n
TF = 10n
PW = 4.998u
PER = 100u
0
Test condition: VCC=300 (V) ,IC=10 (A) ,-dit/dt=30A/usec.
Parameter Unit Measurement Simulation %Error
trr nsec 125.000 121.944 -2.44
Irr A 1.200 1.213 1.08
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
11