SPICE MODEL of 1MBH50D-060 (Professional+FWDS Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: 1MBH50D-060
MANUFACTURER: FUJI ELECTRIC
*REMARK: Free-Wheeling Diode (Standard Model)
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

2. Transfer Characteristics
Circuit Simulation result
100A
80A
60A
40A
20A
0A
0V 4V 8V 12V 16V 20V
I(U1:C)
V_VGE
Evaluation circuit
U1
1MBH50D-060
D1 VCE
D1MBH50D-060 5Vdc
VGE
15Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

3. Comparison Graph
Simulation result
Comparison table
Test condition: VCE =5 (V)
VGE (V)
IC (A) %Error
Measurement Simulation
2 8.000 8.003 0.04
44 10.000 9.985 -0.15
100 11.665 11.642 -0.20
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

4. Fall Time Characteristics
Circuit Simulation result
50A
40A
30A
20A
10A
0A
4.0us 4.4us 4.8us 5.2us 5.6us 6.0us 6.4us 6.8us
I(RL)
Time
Evaluation circuit
RL
Rg U1 5.95
1MBH50D-060
V1 = -15 D1
V2 = 15 62 D1MBH50D-060
TD = 0.5u V1
TR = 10n VCE
TF = 1n 300Vdc
PW = 4u
PER = 20u
0
Test condition: IC=50 (A), VCC=300 (V)
Parameter Unit Measurement Simulation %Error
tf us 0.130 0.129 -0.77
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

5. Gate Charge Characteristics
Circuit Simulation result
20V
15V
10V
5V
0V
0 50n 100n 150n 200n 250n
V(W1:1)
Time*1mA
Evaluation circuit
V2
0
IC
D2
U1 Dbreak 50
1MBH50D-060
D1
I1 = 0 D1MBH50D-060
I2 = 1m W1 W
TF = 10n + IOFF = 100uA
TR = 10n ION = 0A VCC
TD = 0 I2 -
PER = 700m 300
PW = 7m
0
Test condition: VCC=300 (V), IC=50 (A), VGE=15 (V)
Parameter Unit Measurement Simulation %Error
Qge nc 30.000 30.822 2.74
Qgc nc 85.000 86.301 1.53
Qg nc 178.000 177.364 -0.36
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

6. Saturation Characteristics
Circuit Simulation result
100A
80A
60A
40A
20A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(IC)
V(IC:-)
Evaluation circuit
U1
1MBH50D-060 IC
D1 0Adc
D1MBH50D-060
VGE
15Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

7. Comparison Graph
Simulation result
Comparison table
Test condition: VGE =15 (V)
VCE (V)
IC(A) %Error
Measurement Simulation
5 1.340 1.355 1.11
10 1.550 1.530 -1.29
20 1.830 1.827 -0.16
50 2.500 2.505 0.20
80 3.085 3.068 -0.54
100 3.500 3.492 -0.23
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

8. Output Characteristics
Circuit Simulation result
100A
20 15 12
80A V V V
60A
10
40A V
20A
VGE=8
0A
0V 1.0V 2.0V 3.0V 4.0V V 5.0V
I(R1)
V_VCE
Evaluation circuit
R1
0.001m
U1
1MBH50D-060 VCE
D1 5Vdc
D1MBH50D-060
VGE
0
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

9. FWD Forward Current Characteristics
Circuit Simulation result
100A
80A
60A
40A
20A
0A
0V 1.0V 2.0V 3.0V 4.0V
I(Vsense)
V(EC)
Evaluation circuit
Vsense
V1
EC
0Vdc
0Vdc
V2
U1
1MBH50D-060
D1
D1MBH50D-060
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

10. Comparison Graph
Simulation result
Comparison table
VF (V)
IF(A) %Error
Measurement Simulation
2 1.025 1.058 3.22
5 1.220 1.239 1.56
10 1.440 1.417 -1.60
20 1.725 1.665 -3.50
50 2.265 2.225 -1.77
100 2.975 3.028 1.77
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

11. Reverse Recovery Characteristics
Circuit Simulation result
50A
40A
30A
20A
10A
0A
-10A
5.0us 5.2us 5.4us 5.6us 5.8us 6.0us 6.2us 6.4us 6.6us 6.8us
I(FWD)
Time
Evaluation circuit
L2
1 2
0.98uH
U2
1MBH50D-060
D2
D1MBH50D-060
L1
1500uH
FWD 2 1
IC = 50
C VCE
300
Rg U1
1MBH50D-060
V1 = -15 D1
V2 = 15 220 D1MBH50D-060
TD = 4.5u V1
TR = 10n
TF = 10n
PW = 4.998u
PER = 100u
0
Test condition: VCC=300 (V), IC=50 (A), -di/dt=150 (A/us)
Parameter Unit Measurement Simulation %Error
trr ns 155.000 68.422 -55.86
Irr A 7.500 7.494 -0.08
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009