SPICE MODEL of 1MBG10D-060 (Professional+FWDS Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: 1MBG10D-060
MANUFACTURER: FUJI ELECTRIC
*REMARK: Free-Wheeling Diode (Standard Model)
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
1

2. Transfer Characteristics
Circuit Simulation result
25A
20A
15A
10A
5A
0A
0V 4V 8V 12V 16V 20V
I(U1:C)
V_VGE
Evaluation circuit
U1
1MBG10D-060 VCE
5Vdc
VGE D1
15Vdc D1MBG10D-060
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
2

3. Comparison Graph
Simulation result
Comparison table
Test condition: VCE =5 (V)
VGE (V)
IC (A) %Error
Measurement Simulation
0.000 8.000 8.017 0.21
6.000 10.000 9.870 -1.30
20.500 12.000 11.983 -0.14
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
3

4. Fall Time Characteristics
Circuit Simulation result
10A
8A
6A
4A
2A
0A
9.6us 10.0us 11.0us 12.0us 12.6us
I(RL)
Time
Evaluation circuit
RL
Rg 29.75
U1
V1 = -15 1MBG10D-060
V2 = 15 220
TD = 0u V1 D1
TR = 10n D1MBG10D-060 VCE
TF = 1n 300Vdc
PW = 10u
PER = 1m
0
Test condition: IC=10 (A), VCC=300 (V)
Parameter Unit Measurement Simulation %Error
tf us 0.150 0.148 -1.41
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
4

5. Gate Charge Characteristics
Circuit Simulation result
20V
15V
10V
5V
0V
0 10n 20n 30n 40n 50n
V(W1:1)
Time*1mA
Evaluation circuit
V2
0
I1
D2
Dbreak 10
U1
1MBG10D-060
I1 = 0
I2 = 1m W1 W D1
TF = 10n + IOFF = 100uA D1MBG10D-060
TR = 10n ION = 0A VCC
TD = 0 I2 -
PER = 700m 300
PW = 7m
0
Test condition: VCC=300 (V), IC=10 (A), VGE=15 (V)
Parameter Unit Measurement Simulation %Error
Qge nc 6.000 6.035 0.58
Qgc nc 17.500 16.848 -3.73
Qg nc 35.600 35.952 0.99
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
5

6. Saturation Characteristics
Circuit Simulation result
20A
15A
10A
5A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V
I(IC)
V(IC:-)
Evaluation circuit
U1 IC
1MBG10D-060 0Adc
VGE D1
15Vdc D1MBG10D-060
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
6

7. Comparison Graph
Simulation result
Comparison table
Test condition: VGE =15 (V)
VCE (V)
Ic(A) %Error
Measurement Simulation
5 1.900 1.869 -1.63
10 2.475 2.404 -2.87
20 3.450 3.319 -3.79
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
7

8. Output Characteristics
Circuit Simulation result
20A
20 15
V V 12
15A
V
10A
10
V
5A
VGE=8
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
V 6.0V
I(R1)
V_VCE
Evaluation circuit
R1
0.001m
U1 VCE
1MBG10D-060 5Vdc
VGE D1
0 D1MBG10D-060
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
8

9. FWD Forward Current Characteristics
Circuit Simulation result
20A
15A
10A
5A
0A
0V 1.0V 2.0V 3.0V 4.0V
I(Vsense)
V(EC)
Evaluation circuit
Vsense
EC
V1
0Vdc U1
0Vdc
V2
1MBG10D-060
D1
D1MBG10D-060
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
9

10. Comparison Graph
Simulation result
Comparison table
VF (V)
IF(A) %Error
Measurement Simulation
0 0.810 0.840 3.70
1 1.240 1.253 1.01
2 1.400 1.388 -0.86
5 1.675 1.664 -0.64
10 2.000 2.015 0.72
20 2.600 2.596 -0.15
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
10

11. Reverse Recovery Characteristics
Circuit Simulation result
10A
0A
-2A
4.5us 5.0us 6.0us 6.5us
I(FWD)
Time
Evaluation circuit
L2
1 2
U2
9.5uH
D4 1MBG10D-060
D1MBG10D-060
L1
1500uH
FWD 2 1
IC = 10
C VCE
300
I
U1
Rg V 1MBG10D-060
D3
V1 = -15 D1MBG10D-060
V2 = 15 220
TD = 5u V1
TR = 10n
TF = 10n
PW = 4.998u
PER = 100u
0
Test condition: VCC=300 (V), IC=10 (A)
Parameter Unit Measurement Simulation %Error
trr nsec 125.000 79.876 -36.10
Irr A 1.200 1.198 -0.17
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
11