This document provides a device modeling report that includes: 1) Summaries of the SPICE models for the power MOSFET, its body diode, and ESD protection diode components of the 2SK2461 part, including model parameters and characteristics. 2) Graphs of simulated circuit characteristics like transconductance, Vgs-Id, Rds(on), capacitance, and switching time compared to manufacturer measurements. 3) Evaluation circuits and simulation results for the MOSFET and diode components covering characteristics like forward current, reverse recovery, and zener voltage.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameter)
PART NUMBER: 2SK2461
MANUFACTURER: NEC
Body Diode (Model Parameter) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

2. Circuit Configuration
MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

3. Transconductance Characteristic
Circuit Simulation Result
30
Measurement
Simulation
25
20
gfs
15
10
5
0
0 2 4 6 8 10 12 14 16 18 20
ID : Drain Current A
Comparison table
Id(A) gfs Error(%)
Measurement Simulation
1.000 5.900 5.880 -0.339
2.000 8.500 8.470 -0.353
5.000 14.500 14.700 1.379
10.000 19.000 19.230 1.211
20.000 25.000 24.700 -1.200
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

4. Vgs-Id Characteristic
Circuit Simulation result
1.0KA
100A
10A
1.0A
0V 2V 4V 6V 8V 10V 12V 14V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1
2SK2461 Vv ariable
10Vdc
20Vdc
V2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

5. Comparison Graph
Circuit Simulation Result
100.00
Measurement
Simulation
ID : Drain Current A
10.00
1.00
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0
VGS : Gate to Source Voltage V
Simulation Result
ID(A) VGS(V) Error (%)
Measurement Simulation
1.000 2.100 2.190 4.286
2.000 2.200 2.300 4.545
5.000 2.500 2.520 0.800
10.000 2.800 2.820 0.714
20.000 3.200 3.270 2.187
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

6. Rds(on) Characteristic
Circuit Simulation result
10A
8A
6A
4A
2A
0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
U1
2SK2461 VDS
10Vdc
0Vdc
VGS
0
Simulation Result
ID=10A, VGS=10V Measurement Simulation Error (%)
R DS (on) () 0.058 0.0583 0.517
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

7. Gate Charge Characteristic
Circuit Simulation result
16V
12V
8V
4V
0V
0 20n 40n 60n 80n
V(W1:3)
Time*1mS
Evaluation circuit
V2
0Vdc
U1
PER = 1000u Dbreak
2SK2461
PW = 600u W1
TF = 10n + D1
TR = 10n I2
TD = 0
- 20Adc
I2 = 1m W
I1 IOFF = 0.1mA
I1 = 0 ION = 0uA
V1
80Vdc
0
Simulation Result
VDD=80V,ID=20A Measurement Simulation Error (%)
,VGS=10V
Qgs(nc) 5.000 5.085 1.700
Qgd(nc) 15.000 14.915 -0.567
Qg(nc) 52.000 31.850 -38.750
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
VDS(V) Cbd(pF) Error(%)
Measurement Simulation
1.00 850.00 849.00 -0.118
2.00 620.00 640.00 3.226
5.00 440.00 448.00 1.818
10.00 340.00 330.00 -2.941
20.00 250.00 243.00 -2.800
50.00 160.00 159.00 -0.625
100.00 114.00 113.00 -0.877
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

9. Switching Time Characteristic
Circuit Simulation result
15V
10V
5V
0V
1.6us 1.8us 2.0us 2.2us 2.4us 2.6us 2.8us 3.0us 3.2us
V(2) V(3)/5
Time
Evaluation circuit
3 L2
30n
RL
R1 L1 2
U21 5
2SK2461
V1 = 0 10 30nH
V2 = 20 V2 VDD
TD = 2u R2 50Vdc
TR = 6n
TF = 7n 10
PW = 2u
PER = 10u
0
Simulation Result
ID=10A, VDD=50V Measurement Simulation Error(%)
VGS=10V
Ton(ns) 21.000 21.158 0.752
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

10. Output Characteristic
Circuit Simulation result
50A
10 V 8V
40A VGS= 4 V
30A
20A
10A
0A
0V 2.0V 4.0V 6.0V 8.0V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U1
2SK2461
Vv ariable
10Vdc
0Vdc
Vstep
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc U1
2SK2461
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

12. Comparison Graph
Circuit Simulation Result
100.00
Measurement
Simulation
Drain reverse current IDR(A)
10.00
1.00
0 0.4 0.8 1.2 1.6 2
Source: Drain voltage VSD(V)
Simulation Result
IDR(A) VDS(V) VDS(V) %Error
Measurement Simulation
1.000 0.650 0.640 -1.538
2.000 0.700 0.711 1.571
5.000 0.810 0.820 1.235
10.000 0.950 0.930 -2.105
20.000 1.020 1.028 0.784
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
19.8us 20.0us 20.1us 20.3us 20.5us 20.6us 20.8us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4v V1
V2 = 10.7v U1
TD = 100n
TR = 10ns 2SK2461
TF = 19ns
PW = 20us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trr(ns) 210.000 209.622 -0.180
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

14. Reverse Recovery Characteristic Reference
Trj= 104 (ns)
Trb= 106 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 10V 20V 30V 40V 50V 60V 70V 80V 90V 100V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc
R2 U1
2SK2461
100MEG
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008